JP5030388B2 - 薄膜集積回路の作製方法 - Google Patents

薄膜集積回路の作製方法 Download PDF

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Publication number
JP5030388B2
JP5030388B2 JP2005082449A JP2005082449A JP5030388B2 JP 5030388 B2 JP5030388 B2 JP 5030388B2 JP 2005082449 A JP2005082449 A JP 2005082449A JP 2005082449 A JP2005082449 A JP 2005082449A JP 5030388 B2 JP5030388 B2 JP 5030388B2
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Japan
Prior art keywords
thin film
film integrated
integrated circuit
integrated circuits
substrate
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JP2005082449A
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Japanese (ja)
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JP2005311333A5 (https=
JP2005311333A (ja
Inventor
卓也 鶴目
純矢 丸山
芳隆 道前
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005082449A priority Critical patent/JP5030388B2/ja
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Publication of JP2005311333A5 publication Critical patent/JP2005311333A5/ja
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Publication of JP5030388B2 publication Critical patent/JP5030388B2/ja
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  • Thin Film Transistor (AREA)
JP2005082449A 2004-03-22 2005-03-22 薄膜集積回路の作製方法 Expired - Fee Related JP5030388B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005082449A JP5030388B2 (ja) 2004-03-22 2005-03-22 薄膜集積回路の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004083664 2004-03-22
JP2004083664 2004-03-22
JP2005082449A JP5030388B2 (ja) 2004-03-22 2005-03-22 薄膜集積回路の作製方法

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JP2005311333A JP2005311333A (ja) 2005-11-04
JP2005311333A5 JP2005311333A5 (https=) 2008-04-24
JP5030388B2 true JP5030388B2 (ja) 2012-09-19

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JP2005082449A Expired - Fee Related JP5030388B2 (ja) 2004-03-22 2005-03-22 薄膜集積回路の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5008299B2 (ja) * 2005-11-30 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7875530B2 (en) 2005-12-02 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7504317B2 (en) 2005-12-02 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101430587B1 (ko) * 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
KR101519038B1 (ko) 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
JP5216716B2 (ja) * 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
KR101026040B1 (ko) * 2008-11-13 2011-03-30 삼성전기주식회사 박막소자 제조방법
KR101046064B1 (ko) * 2008-12-11 2011-07-01 삼성전기주식회사 박막소자 제조방법
JP2010205943A (ja) * 2009-03-04 2010-09-16 Canon Inc 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
EP2457256B1 (en) 2009-07-18 2020-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US6887650B2 (en) * 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
JP4211256B2 (ja) * 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器

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JP2005311333A (ja) 2005-11-04

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