JP5026404B2 - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP5026404B2 JP5026404B2 JP2008328572A JP2008328572A JP5026404B2 JP 5026404 B2 JP5026404 B2 JP 5026404B2 JP 2008328572 A JP2008328572 A JP 2008328572A JP 2008328572 A JP2008328572 A JP 2008328572A JP 5026404 B2 JP5026404 B2 JP 5026404B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- diode chip
- phosphor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920005989 resin Polymers 0.000 claims description 71
- 239000011347 resin Substances 0.000 claims description 71
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 37
- 238000004806 packaging method and process Methods 0.000 claims description 34
- 238000005192 partition Methods 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 2
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 238000009877 rendering Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Description
101、211 隔壁
110 近紫外線発光ダイオードチップ
111 青色発光ダイオードチップ
210 近紫外線或いは青色発光ダイオードチップ
121、221 第1電極構造
122、222 第2電極構造
Claims (2)
- 凹部と、前記凹部を少なくとも第1収納溝及び第2収納溝に分ける隔壁を有するパッケージ本体と、
前記第1及び第2収納溝の底面に夫々露出されるように前記パッケージ本体に形成された第1及び第2電極構造と、
前記第1及び第2電極構造に電気的に接続され、前記第1及び第2収納溝の底面に夫々実装された第1及び第2発光ダイオードチップと、
少なくとも1つの蛍光体を含み第1及び第2発光ダイオードチップを包装するように前記第1及び第2収納溝に形成された第1及び第2樹脂包装部を含み、
前記第1及び第2発光ダイオードチップは近紫外線発光ダイオードチップであり、
前記第1発光ダイオードチップを包装するように前記第1収納溝に形成された第1樹脂包装部及び前記第2発光ダイオードチップを包装するように前記第2収納溝に形成された第2樹脂包装部は、赤色の蛍光体が含まれる赤色層、緑色の蛍光体が含まれる緑色層、及び青色の蛍光体が含まれる青色層が積層されて形成され、
前記隔壁は、前記第1及び第2発光ダイオードチップから発生した光を透過し、前記蛍光体によって変換された光のうち、特定波長の光を透過しないことを特徴とする発光ダイオードパッケージ。 - 前記隔壁は傾いた面を有することを特徴とする請求項1に記載の発光ダイオードパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080119189A KR101018153B1 (ko) | 2008-11-27 | 2008-11-27 | Led 패키지 |
KR10-2008-0119189 | 2008-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010129993A JP2010129993A (ja) | 2010-06-10 |
JP5026404B2 true JP5026404B2 (ja) | 2012-09-12 |
Family
ID=42196068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008328572A Active JP5026404B2 (ja) | 2008-11-27 | 2008-12-24 | Ledパッケージ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8558268B2 (ja) |
JP (1) | JP5026404B2 (ja) |
KR (1) | KR101018153B1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI399873B (zh) * | 2009-03-03 | 2013-06-21 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
US20110089448A1 (en) * | 2009-10-20 | 2011-04-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Single Encapsulant For A Plurality Of Light Sources |
JP5623062B2 (ja) * | 2009-11-13 | 2014-11-12 | シャープ株式会社 | 発光装置およびその製造方法 |
CN102834942B (zh) * | 2010-04-09 | 2016-04-13 | 罗姆股份有限公司 | Led模块 |
KR101114197B1 (ko) * | 2010-08-09 | 2012-02-22 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
EP2418700B1 (en) * | 2010-08-09 | 2017-11-01 | LG Innotek Co., Ltd. | Light emitting device |
TWI476961B (zh) * | 2010-10-12 | 2015-03-11 | 友達光電股份有限公司 | 發光二極體裝置 |
CN102427075B (zh) * | 2010-10-12 | 2013-08-21 | 友达光电股份有限公司 | 发光二极管装置及场序显示器 |
JP2012199539A (ja) * | 2011-03-08 | 2012-10-18 | Mitsubishi Chemicals Corp | 発光装置及び発光装置を備えた照明装置 |
WO2012124509A1 (ja) * | 2011-03-11 | 2012-09-20 | シャープ株式会社 | 光源、照明装置及び表示装置 |
US20120250320A1 (en) * | 2011-03-31 | 2012-10-04 | Xicato, Inc. | Color conversion cavities for led-based illumination modules |
KR101852388B1 (ko) * | 2011-04-28 | 2018-04-26 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US8901578B2 (en) | 2011-05-10 | 2014-12-02 | Rohm Co., Ltd. | LED module having LED chips as light source |
US8814378B2 (en) * | 2011-12-05 | 2014-08-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | LCD device and LED package structure thereof |
KR101993346B1 (ko) * | 2012-02-16 | 2019-06-26 | 엘지이노텍 주식회사 | 조명 장치 및 그의 설계 방법 |
EP2650918A1 (en) * | 2012-04-10 | 2013-10-16 | Koninklijke Philips N.V. | Light emitting module |
WO2014030148A2 (en) * | 2012-08-24 | 2014-02-27 | Koninklijke Philips N.V. | A light emitting assembly, a lamp and a luminaire |
WO2015015363A1 (en) | 2013-08-01 | 2015-02-05 | Koninklijke Philips N.V. | Light emitting arrangement with adapted output spectrum |
JP6284738B2 (ja) * | 2013-10-18 | 2018-02-28 | シチズン電子株式会社 | 半導体発光装置 |
US20160141276A1 (en) * | 2014-11-14 | 2016-05-19 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Light-emitting structure for providing predetermined whiteness |
CN109075161B (zh) * | 2016-04-29 | 2023-02-21 | 亮锐控股有限公司 | 高亮度绚白led光源 |
KR101897007B1 (ko) * | 2016-11-08 | 2018-09-12 | 주식회사 올릭스 | 엘이디 패키지 |
US9917076B2 (en) | 2016-06-16 | 2018-03-13 | Allix Co., Ltd. | LED package |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6600175B1 (en) * | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
JP3466956B2 (ja) * | 1999-04-28 | 2003-11-17 | キヤノン株式会社 | 画像形成装置 |
US6513949B1 (en) * | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
US6583550B2 (en) * | 2000-10-24 | 2003-06-24 | Toyoda Gosei Co., Ltd. | Fluorescent tube with light emitting diodes |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
DE10145701A1 (de) * | 2001-09-17 | 2003-04-10 | Infineon Technologies Ag | Fluoreszenz-Biosensorchip und Fluoreszenz-Biosensorchip-Anordnung |
EP1361594A3 (en) * | 2002-05-09 | 2005-08-31 | Lg Electronics Inc. | Plasma display panel |
US6871982B2 (en) * | 2003-01-24 | 2005-03-29 | Digital Optics International Corporation | High-density illumination system |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
JP4414771B2 (ja) * | 2004-01-08 | 2010-02-10 | オリンパス株式会社 | 共焦点顕微分光装置 |
JP2006114854A (ja) | 2004-10-18 | 2006-04-27 | Sharp Corp | 半導体発光装置、液晶表示装置用のバックライト装置 |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
JP4574417B2 (ja) | 2005-03-31 | 2010-11-04 | シャープ株式会社 | 光源モジュール、バックライトユニット、液晶表示装置 |
WO2006130724A2 (en) * | 2005-05-31 | 2006-12-07 | Infocus Corporation | Illumination arrangements for colored light sources |
JP2007036041A (ja) | 2005-07-28 | 2007-02-08 | Sony Corp | 発光装置及び光学装置 |
KR100678197B1 (ko) * | 2005-09-23 | 2007-02-02 | 삼성전자주식회사 | 키패드의 백라이팅 장치 |
JP2008060129A (ja) * | 2006-08-29 | 2008-03-13 | Nec Lighting Ltd | フルカラー発光ダイオード |
JP2008108835A (ja) | 2006-10-24 | 2008-05-08 | Harison Toshiba Lighting Corp | 半導体発光装置及びその製造方法 |
JP2008140934A (ja) | 2006-11-30 | 2008-06-19 | Toshiba Lighting & Technology Corp | 発光ダイオード装置及び照明装置 |
US7547114B2 (en) * | 2007-07-30 | 2009-06-16 | Ylx Corp. | Multicolor illumination device using moving plate with wavelength conversion materials |
KR100924912B1 (ko) * | 2008-07-29 | 2009-11-03 | 서울반도체 주식회사 | 웜화이트 발광장치 및 그것을 포함하는 백라이트 모듈 |
-
2008
- 2008-11-27 KR KR1020080119189A patent/KR101018153B1/ko active IP Right Grant
- 2008-12-23 US US12/343,452 patent/US8558268B2/en active Active
- 2008-12-24 JP JP2008328572A patent/JP5026404B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US8558268B2 (en) | 2013-10-15 |
KR20100060557A (ko) | 2010-06-07 |
KR101018153B1 (ko) | 2011-02-28 |
US20100128461A1 (en) | 2010-05-27 |
JP2010129993A (ja) | 2010-06-10 |
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