JP5025134B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5025134B2
JP5025134B2 JP2006011926A JP2006011926A JP5025134B2 JP 5025134 B2 JP5025134 B2 JP 5025134B2 JP 2006011926 A JP2006011926 A JP 2006011926A JP 2006011926 A JP2006011926 A JP 2006011926A JP 5025134 B2 JP5025134 B2 JP 5025134B2
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JP
Japan
Prior art keywords
layer
conductive layer
conductive
insulating
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006011926A
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English (en)
Japanese (ja)
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JP2006229211A5 (cg-RX-API-DMAC7.html
JP2006229211A (ja
Inventor
芳隆 守屋
康子 渡辺
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006011926A priority Critical patent/JP5025134B2/ja
Publication of JP2006229211A publication Critical patent/JP2006229211A/ja
Publication of JP2006229211A5 publication Critical patent/JP2006229211A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
JP2006011926A 2005-01-21 2006-01-20 半導体装置 Expired - Fee Related JP5025134B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006011926A JP5025134B2 (ja) 2005-01-21 2006-01-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005014617 2005-01-21
JP2005014617 2005-01-21
JP2006011926A JP5025134B2 (ja) 2005-01-21 2006-01-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2006229211A JP2006229211A (ja) 2006-08-31
JP2006229211A5 JP2006229211A5 (cg-RX-API-DMAC7.html) 2008-12-11
JP5025134B2 true JP5025134B2 (ja) 2012-09-12

Family

ID=36692428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006011926A Expired - Fee Related JP5025134B2 (ja) 2005-01-21 2006-01-20 半導体装置

Country Status (4)

Country Link
US (1) US8835907B2 (cg-RX-API-DMAC7.html)
EP (1) EP1839335A4 (cg-RX-API-DMAC7.html)
JP (1) JP5025134B2 (cg-RX-API-DMAC7.html)
WO (1) WO2006078065A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006043687A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7688272B2 (en) 2005-05-30 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
IL173941A0 (en) 2006-02-26 2007-03-08 Haim Goldberger Monolithic modules for high frequecney applications
JP5819737B2 (ja) * 2012-01-20 2015-11-24 株式会社日立製作所 半導体装置
TWI533771B (zh) * 2014-07-17 2016-05-11 矽品精密工業股份有限公司 無核心層封裝基板及其製法
CN104485334B (zh) * 2014-12-16 2018-02-13 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US10453872B1 (en) * 2018-05-03 2019-10-22 Wuhan China Star Optoelectronics Semiconductor Display Technologiy Co., Ltd. Array substrate and manufacturing method thereof

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DE3602887A1 (de) * 1986-01-31 1987-08-06 Bayer Ag Nichtfluechtiger elektronischer speicher
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
DE19901384A1 (de) * 1999-01-15 2000-07-27 Siemens Ag Elektronisches Bauelement und Verwendung einer darin enthaltenen Schutzstruktur
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
EP1181666A1 (en) * 2000-02-14 2002-02-27 Koninklijke Philips Electronics N.V. Transponder and appliance
KR20020030272A (ko) * 2000-03-28 2002-04-24 롤페스 요하네스 게라투스 알베르투스 집적 회로 및 이를 포함하는 트랜스폰더 및 시큐리티페이퍼 및 집적 회로 내의 메모리 프로그래밍 방법
JP2001345431A (ja) * 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
US6924691B2 (en) * 2000-11-28 2005-08-02 Precision Dynamics Corporation Rectifying charge storage device with sensor
SG117406A1 (en) * 2001-03-19 2005-12-29 Miconductor Energy Lab Co Ltd Method of manufacturing a semiconductor device
JP3560563B2 (ja) * 2001-05-08 2004-09-02 シャープ株式会社 半導体装置及びその製造方法
US6773929B2 (en) * 2001-09-14 2004-08-10 Hynix Semiconductor Inc. Ferroelectric memory device and method for manufacturing the same
JP4050503B2 (ja) * 2001-11-29 2008-02-20 株式会社日立製作所 表示装置
US6646328B2 (en) * 2002-01-11 2003-11-11 Taiwan Semiconductor Manufacturing Co. Ltd. Chip antenna with a shielding layer
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP4274734B2 (ja) * 2002-03-15 2009-06-10 三洋電機株式会社 トランジスタ回路
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
EP1437683B1 (en) * 2002-12-27 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. IC card and booking account system using the IC card
JP4393859B2 (ja) * 2002-12-27 2010-01-06 株式会社半導体エネルギー研究所 記録媒体の作製方法
JP4566578B2 (ja) 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
US7973313B2 (en) * 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP3794411B2 (ja) * 2003-03-14 2006-07-05 セイコーエプソン株式会社 表示装置および電子機器
US7333072B2 (en) * 2003-03-24 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7494066B2 (en) * 2003-12-19 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN100478986C (zh) * 2004-03-04 2009-04-15 株式会社半导体能源研究所 Id芯片和ic卡
WO2006043687A1 (en) * 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1810334B1 (en) * 2004-11-11 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing a Semiconductor Device

Also Published As

Publication number Publication date
JP2006229211A (ja) 2006-08-31
US8835907B2 (en) 2014-09-16
WO2006078065A1 (en) 2006-07-27
EP1839335A1 (en) 2007-10-03
US20080121874A1 (en) 2008-05-29
EP1839335A4 (en) 2011-09-14

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