JP5011376B2 - 抵抗分割回路を具える集積回路およびその製造方法 - Google Patents

抵抗分割回路を具える集積回路およびその製造方法 Download PDF

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Publication number
JP5011376B2
JP5011376B2 JP2009506026A JP2009506026A JP5011376B2 JP 5011376 B2 JP5011376 B2 JP 5011376B2 JP 2009506026 A JP2009506026 A JP 2009506026A JP 2009506026 A JP2009506026 A JP 2009506026A JP 5011376 B2 JP5011376 B2 JP 5011376B2
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Japan
Prior art keywords
silicon
resistance
silicided
integrated circuit
intermediate tap
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Expired - Fee Related
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JP2009506026A
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English (en)
Japanese (ja)
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JP2009534829A (ja
JP2009534829A5 (https=
Inventor
シー ネゴイ アンディー
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NXP BV
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NXP BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP2009506026A 2006-04-21 2007-04-19 抵抗分割回路を具える集積回路およびその製造方法 Expired - Fee Related JP5011376B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06300393 2006-04-21
EP06300393.3 2006-04-21
PCT/IB2007/051409 WO2007122561A2 (en) 2006-04-21 2007-04-19 Adjustible resistor for use in a resistive divider circuit and method for manufacturing

Publications (3)

Publication Number Publication Date
JP2009534829A JP2009534829A (ja) 2009-09-24
JP2009534829A5 JP2009534829A5 (https=) 2012-06-14
JP5011376B2 true JP5011376B2 (ja) 2012-08-29

Family

ID=38477145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009506026A Expired - Fee Related JP5011376B2 (ja) 2006-04-21 2007-04-19 抵抗分割回路を具える集積回路およびその製造方法

Country Status (5)

Country Link
US (1) US8026556B2 (https=)
EP (1) EP2022082A2 (https=)
JP (1) JP5011376B2 (https=)
CN (1) CN101427346B (https=)
WO (1) WO2007122561A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101427346B (zh) * 2006-04-21 2010-12-15 Nxp股份有限公司 电阻分压器电路中使用的可调电阻器及其制造方法
WO2013057585A2 (en) * 2011-10-20 2013-04-25 King Abdullah University Of Science And Technology A reactance-less oscillator

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1115654B (it) * 1977-05-04 1986-02-03 Ates Componenti Elettron Partitore di tensione diffuso per circuito integrato monolitico
US4219797A (en) * 1979-03-19 1980-08-26 National Semiconductor Corporation Integrated circuit resistance ladder having curvilinear connecting segments
US5247262A (en) 1992-03-13 1993-09-21 The United States Of America As Represented By The Secretary Of Commerce Linewidth micro-bridge test structure
JPH05284031A (ja) * 1992-03-31 1993-10-29 Hitachi Ltd 半導体装置
KR950034754A (ko) 1994-05-06 1995-12-28 윌리엄 이. 힐러 폴리실리콘 저항을 형성하는 방법 및 이 방법으로부터 제조된 저항
US6087189A (en) 1997-04-24 2000-07-11 National Science Council Test structure for monitoring overetching of silicide during contact opening
JP2001051661A (ja) 1999-08-16 2001-02-23 Semiconductor Energy Lab Co Ltd Ｄ／ａ変換回路および半導体装置
US6369736B2 (en) 1999-12-20 2002-04-09 Texas Instruments Incorporated Data converter with vertical resistor meander
JP2003152079A (ja) * 2001-11-14 2003-05-23 Sharp Corp 基準電圧発生機構、基準電圧発生機構の設計方法、及び基準電圧発生機構の設計装置
US6730554B1 (en) 2002-11-21 2004-05-04 Texas Instruments Incorporated Multi-layer silicide block process
US6879131B2 (en) * 2003-04-03 2005-04-12 Cirrus Logic, Inc. Minimizing end boundary resistance in a programmable resistor of an integrated circuit
US20040235258A1 (en) 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
US20070063308A1 (en) 2003-10-29 2007-03-22 Koninklijke Philips Electronics N.V. Integrated circuit with partly silicidated silicon layer
US7135376B2 (en) 2003-12-24 2006-11-14 Oki Electric Industry Co., Ltd. Resistance dividing circuit and manufacturing method thereof
JP3955298B2 (ja) 2003-12-25 2007-08-08 松下電器産業株式会社 抵抗分圧回路、およびこの抵抗分圧回路を使用した液晶駆動装置ならびに液晶表示装置
JP3983751B2 (ja) * 2004-06-08 2007-09-26 株式会社リコー 半導体装置及びその製造方法
US7790617B2 (en) * 2005-11-12 2010-09-07 Chartered Semiconductor Manufacturing, Ltd. Formation of metal silicide layer over copper interconnect for reliability enhancement
CN101427346B (zh) * 2006-04-21 2010-12-15 Nxp股份有限公司 电阻分压器电路中使用的可调电阻器及其制造方法
US8274722B2 (en) * 2008-01-15 2012-09-25 Moidu Abdul Jaleel K Counter-balanced MEMS mirror with hidden hinge

Also Published As

Publication number Publication date
CN101427346B (zh) 2010-12-15
EP2022082A2 (en) 2009-02-11
CN101427346A (zh) 2009-05-06
US20090174033A1 (en) 2009-07-09
JP2009534829A (ja) 2009-09-24
WO2007122561A3 (en) 2008-01-10
US8026556B2 (en) 2011-09-27
WO2007122561A2 (en) 2007-11-01

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