JP5010708B2 - 非絶縁ゲート半導体デバイスのゲート駆動回路 - Google Patents

非絶縁ゲート半導体デバイスのゲート駆動回路 Download PDF

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Publication number
JP5010708B2
JP5010708B2 JP2010098365A JP2010098365A JP5010708B2 JP 5010708 B2 JP5010708 B2 JP 5010708B2 JP 2010098365 A JP2010098365 A JP 2010098365A JP 2010098365 A JP2010098365 A JP 2010098365A JP 5010708 B2 JP5010708 B2 JP 5010708B2
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Prior art keywords
circuit
semiconductor device
gate
diode
switch
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Japanese (ja)
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JP2010259324A5 (enExample
JP2010259324A (ja
Inventor
アントニオ・カイアファ
ジェフリー・ジョセフ・ナサドスキ
ジョン・スタンレー・グレイザー
ホァン・アントニオ・サバテ
リチャード・アルフレッド・ビュープレ
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General Electric Co
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General Electric Co
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Publication of JP2010259324A5 publication Critical patent/JP2010259324A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2010098365A 2009-04-27 2010-04-22 非絶縁ゲート半導体デバイスのゲート駆動回路 Active JP5010708B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US17320109P 2009-04-27 2009-04-27
US61/173,201 2009-04-27
US12/495,048 2009-06-30
US12/495,048 US7915944B2 (en) 2009-04-27 2009-06-30 Gate drive circuitry for non-isolated gate semiconductor devices

Publications (3)

Publication Number Publication Date
JP2010259324A JP2010259324A (ja) 2010-11-11
JP2010259324A5 JP2010259324A5 (enExample) 2011-08-11
JP5010708B2 true JP5010708B2 (ja) 2012-08-29

Family

ID=42991589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010098365A Active JP5010708B2 (ja) 2009-04-27 2010-04-22 非絶縁ゲート半導体デバイスのゲート駆動回路

Country Status (5)

Country Link
US (1) US7915944B2 (enExample)
JP (1) JP5010708B2 (enExample)
CA (1) CA2700013C (enExample)
DE (1) DE102010016611B4 (enExample)
GB (1) GB2469914B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2447988B1 (en) * 2010-11-02 2015-05-06 GE Energy Power Conversion Technology Limited Power electronic device with edge passivation
US8625743B1 (en) 2011-04-28 2014-01-07 General Electric Company Inverse pulse control for eddy current abatement
US8896182B2 (en) 2012-04-05 2014-11-25 General Electric Corporation System for driving a piezoelectric load and method of making same
FR2990312B1 (fr) * 2012-05-03 2015-05-15 Alstom Transport Sa Un dispositif comportant un composant electronique avec une grande vitesse de commutation
US8958217B2 (en) 2012-06-15 2015-02-17 General Electric Company System for driving a piezoelectric load and method of making same
US9389288B2 (en) 2012-09-14 2016-07-12 General Electric Company System and method for maintaining soft switching condition in a gradient coil driver circuit
US8917135B2 (en) 2013-05-14 2014-12-23 Infineon Technologies Austria Ag Circuit with a plurality of diodes and method for controlling such a circuit
US9231565B2 (en) 2013-05-14 2016-01-05 Infineon Technologies Austria Ag Circuit with a plurality of bipolar transistors and method for controlling such a circuit

Family Cites Families (24)

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JPS62144564A (ja) * 1985-12-18 1987-06-27 Fuji Electric Co Ltd 静電誘導形トランジスタのゲ−ト駆動回路
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
US5532896A (en) * 1994-04-26 1996-07-02 Coussens; Eugene Distributed silicon controlled rectifiers for ESD protection
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US6392859B1 (en) * 1999-02-14 2002-05-21 Yazaki Corporation Semiconductor active fuse for AC power line and bidirectional switching device for the fuse
US6515534B2 (en) * 1999-12-30 2003-02-04 Intel Corporation Enhanced conductivity body biased PMOS driver
US6650520B2 (en) * 2001-10-26 2003-11-18 Koninklijke Philips Electronics N.V. Power supply reverse bias protection circuit for protecting both analog and digital devices coupled thereto
DE10212869A1 (de) * 2002-03-22 2003-09-18 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
DE10212863B4 (de) * 2002-03-22 2006-06-08 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
KR101042148B1 (ko) * 2004-05-08 2011-06-16 페어차일드코리아반도체 주식회사 기판 순환 전류가 억제되는 전력용 반도체 소자 및 그 제조 방법
TWI258261B (en) * 2004-05-18 2006-07-11 Richtek Techohnology Corp JFET driving circuit applied to DC/DC converter and method thereof
JP4843253B2 (ja) * 2005-05-23 2011-12-21 株式会社東芝 電力用半導体装置
JP4600180B2 (ja) * 2005-06-27 2010-12-15 株式会社日立製作所 電界効果型パワー半導体素子を用いた半導体回路
DE102005030831B3 (de) 2005-07-01 2006-06-14 Siemens Ag Gate-Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
US20070146020A1 (en) * 2005-11-29 2007-06-28 Advanced Analogic Technologies, Inc High Frequency Power MESFET Gate Drive Circuits
JP4804142B2 (ja) * 2005-12-21 2011-11-02 東洋電機製造株式会社 高速ゲート駆動回路
DE102006025374B4 (de) * 2006-05-31 2008-03-13 Technische Universität Chemnitz Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors
US20080054984A1 (en) * 2006-08-31 2008-03-06 International Rectifier Corporation High voltage gate driver ic with ramp driver
US7782118B2 (en) * 2007-04-30 2010-08-24 Northrop Grumman Systems Corporation Gate drive for wide bandgap semiconductor device
CN101675394A (zh) * 2007-05-03 2010-03-17 帝斯曼方案公司 自适应功率管理方法和系统
US7851947B2 (en) * 2007-11-05 2010-12-14 Qualcomm, Incorporated Methods and apparatuses for selectable voltage supply
TWI357211B (en) * 2008-04-18 2012-01-21 Realtek Semiconductor Corp Leakage current preventing circuit and semiconduct
JP5258490B2 (ja) * 2008-10-02 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路及びそれを用いたｉｃカード
JP2010129768A (ja) * 2008-11-27 2010-06-10 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
CA2700013C (en) 2012-10-09
US20100271081A1 (en) 2010-10-28
CA2700013A1 (en) 2010-10-27
US7915944B2 (en) 2011-03-29
GB2469914B (en) 2012-04-04
JP2010259324A (ja) 2010-11-11
DE102010016611A1 (de) 2010-10-28
GB201006917D0 (en) 2010-06-09
GB2469914A (en) 2010-11-03
DE102010016611B4 (de) 2012-05-31

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