CA2700013C - Gate drive circuitry for non-isolated gate semiconductor devices - Google Patents
Gate drive circuitry for non-isolated gate semiconductor devices Download PDFInfo
- Publication number
- CA2700013C CA2700013C CA2700013A CA2700013A CA2700013C CA 2700013 C CA2700013 C CA 2700013C CA 2700013 A CA2700013 A CA 2700013A CA 2700013 A CA2700013 A CA 2700013A CA 2700013 C CA2700013 C CA 2700013C
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- circuitry
- gate drive
- gate
- drive circuitry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 230000003071 parasitic effect Effects 0.000 claims abstract description 59
- 239000003990 capacitor Substances 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17320109P | 2009-04-27 | 2009-04-27 | |
| US61/173,201 | 2009-04-27 | ||
| US12/495,048 | 2009-06-30 | ||
| US12/495,048 US7915944B2 (en) | 2009-04-27 | 2009-06-30 | Gate drive circuitry for non-isolated gate semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2700013A1 CA2700013A1 (en) | 2010-10-27 |
| CA2700013C true CA2700013C (en) | 2012-10-09 |
Family
ID=42991589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2700013A Active CA2700013C (en) | 2009-04-27 | 2010-04-15 | Gate drive circuitry for non-isolated gate semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7915944B2 (enExample) |
| JP (1) | JP5010708B2 (enExample) |
| CA (1) | CA2700013C (enExample) |
| DE (1) | DE102010016611B4 (enExample) |
| GB (1) | GB2469914B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2447988B1 (en) * | 2010-11-02 | 2015-05-06 | GE Energy Power Conversion Technology Limited | Power electronic device with edge passivation |
| US8625743B1 (en) | 2011-04-28 | 2014-01-07 | General Electric Company | Inverse pulse control for eddy current abatement |
| US8896182B2 (en) | 2012-04-05 | 2014-11-25 | General Electric Corporation | System for driving a piezoelectric load and method of making same |
| FR2990312B1 (fr) * | 2012-05-03 | 2015-05-15 | Alstom Transport Sa | Un dispositif comportant un composant electronique avec une grande vitesse de commutation |
| US8958217B2 (en) | 2012-06-15 | 2015-02-17 | General Electric Company | System for driving a piezoelectric load and method of making same |
| US9389288B2 (en) | 2012-09-14 | 2016-07-12 | General Electric Company | System and method for maintaining soft switching condition in a gradient coil driver circuit |
| US8917135B2 (en) | 2013-05-14 | 2014-12-23 | Infineon Technologies Austria Ag | Circuit with a plurality of diodes and method for controlling such a circuit |
| US9231565B2 (en) | 2013-05-14 | 2016-01-05 | Infineon Technologies Austria Ag | Circuit with a plurality of bipolar transistors and method for controlling such a circuit |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144564A (ja) * | 1985-12-18 | 1987-06-27 | Fuji Electric Co Ltd | 静電誘導形トランジスタのゲ−ト駆動回路 |
| JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
| US5532896A (en) * | 1994-04-26 | 1996-07-02 | Coussens; Eugene | Distributed silicon controlled rectifiers for ESD protection |
| US6628564B1 (en) * | 1998-06-29 | 2003-09-30 | Fujitsu Limited | Semiconductor memory device capable of driving non-selected word lines to first and second potentials |
| US6392859B1 (en) * | 1999-02-14 | 2002-05-21 | Yazaki Corporation | Semiconductor active fuse for AC power line and bidirectional switching device for the fuse |
| US6515534B2 (en) * | 1999-12-30 | 2003-02-04 | Intel Corporation | Enhanced conductivity body biased PMOS driver |
| US6650520B2 (en) * | 2001-10-26 | 2003-11-18 | Koninklijke Philips Electronics N.V. | Power supply reverse bias protection circuit for protecting both analog and digital devices coupled thereto |
| DE10212869A1 (de) * | 2002-03-22 | 2003-09-18 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
| DE10212863B4 (de) * | 2002-03-22 | 2006-06-08 | Siemens Ag | Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
| KR101042148B1 (ko) * | 2004-05-08 | 2011-06-16 | 페어차일드코리아반도체 주식회사 | 기판 순환 전류가 억제되는 전력용 반도체 소자 및 그 제조 방법 |
| TWI258261B (en) * | 2004-05-18 | 2006-07-11 | Richtek Techohnology Corp | JFET driving circuit applied to DC/DC converter and method thereof |
| JP4843253B2 (ja) * | 2005-05-23 | 2011-12-21 | 株式会社東芝 | 電力用半導体装置 |
| JP4600180B2 (ja) * | 2005-06-27 | 2010-12-15 | 株式会社日立製作所 | 電界効果型パワー半導体素子を用いた半導体回路 |
| DE102005030831B3 (de) | 2005-07-01 | 2006-06-14 | Siemens Ag | Gate-Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor |
| US20070146020A1 (en) * | 2005-11-29 | 2007-06-28 | Advanced Analogic Technologies, Inc | High Frequency Power MESFET Gate Drive Circuits |
| JP4804142B2 (ja) * | 2005-12-21 | 2011-11-02 | 東洋電機製造株式会社 | 高速ゲート駆動回路 |
| DE102006025374B4 (de) * | 2006-05-31 | 2008-03-13 | Technische Universität Chemnitz | Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors |
| US20080054984A1 (en) * | 2006-08-31 | 2008-03-06 | International Rectifier Corporation | High voltage gate driver ic with ramp driver |
| US7782118B2 (en) * | 2007-04-30 | 2010-08-24 | Northrop Grumman Systems Corporation | Gate drive for wide bandgap semiconductor device |
| CN101675394A (zh) * | 2007-05-03 | 2010-03-17 | 帝斯曼方案公司 | 自适应功率管理方法和系统 |
| US7851947B2 (en) * | 2007-11-05 | 2010-12-14 | Qualcomm, Incorporated | Methods and apparatuses for selectable voltage supply |
| TWI357211B (en) * | 2008-04-18 | 2012-01-21 | Realtek Semiconductor Corp | Leakage current preventing circuit and semiconduct |
| JP5258490B2 (ja) * | 2008-10-02 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路及びそれを用いたｉｃカード |
| JP2010129768A (ja) * | 2008-11-27 | 2010-06-10 | Toshiba Corp | 半導体装置 |
-
2009
- 2009-06-30 US US12/495,048 patent/US7915944B2/en active Active
-
2010
- 2010-04-15 CA CA2700013A patent/CA2700013C/en active Active
- 2010-04-22 JP JP2010098365A patent/JP5010708B2/ja active Active
- 2010-04-23 DE DE102010016611A patent/DE102010016611B4/de active Active
- 2010-04-26 GB GB1006917.7A patent/GB2469914B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20100271081A1 (en) | 2010-10-28 |
| CA2700013A1 (en) | 2010-10-27 |
| JP5010708B2 (ja) | 2012-08-29 |
| US7915944B2 (en) | 2011-03-29 |
| GB2469914B (en) | 2012-04-04 |
| JP2010259324A (ja) | 2010-11-11 |
| DE102010016611A1 (de) | 2010-10-28 |
| GB201006917D0 (en) | 2010-06-09 |
| GB2469914A (en) | 2010-11-03 |
| DE102010016611B4 (de) | 2012-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |