JP5006154B2 - 磁気トンネル接合素子およびその製造方法 - Google Patents
磁気トンネル接合素子およびその製造方法 Download PDFInfo
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- JP5006154B2 JP5006154B2 JP2007270586A JP2007270586A JP5006154B2 JP 5006154 B2 JP5006154 B2 JP 5006154B2 JP 2007270586 A JP2007270586 A JP 2007270586A JP 2007270586 A JP2007270586 A JP 2007270586A JP 5006154 B2 JP5006154 B2 JP 5006154B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 149
- 230000004888 barrier function Effects 0.000 claims description 44
- 239000002131 composite material Substances 0.000 claims description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 13
- 239000000395 magnesium oxide Substances 0.000 claims description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- CNRZQDQNVUKEJG-UHFFFAOYSA-N oxo-bis(oxoalumanyloxy)titanium Chemical compound O=[Al]O[Ti](=O)O[Al]=O CNRZQDQNVUKEJG-UHFFFAOYSA-N 0.000 claims description 6
- 229910003087 TiOx Inorganic materials 0.000 claims description 5
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- ZZFDVAITIGEBDR-UHFFFAOYSA-N [Hf].[Fe].[Ni] Chemical compound [Hf].[Fe].[Ni] ZZFDVAITIGEBDR-UHFFFAOYSA-N 0.000 claims description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 2
- 229910017107 AlOx Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 417
- 239000010408 film Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910001029 Hf alloy Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- -1 AlHfOx Chemical compound 0.000 description 1
- 101000993059 Homo sapiens Hereditary hemochromatosis protein Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
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- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
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- Y10T29/49032—Fabricating head structure or component thereof
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Description
(参考出願1):C.Horng et.al.2003 Invention disclosure "A novel capping layer fororming high performance MTJ for MRAM application"
(参考出願2):C.Horng et.al. HMG06005 "A novel method to form nonmagneticNiFeMg cap for the NiFe(free layer)MTJ to enhance dR/R"
(参考出願3):C.Homg & R.Tong, HMG0601 1 "A novel material to cap the NiFe(free layer)MTJ to enhance dR/R and method of forming the cap structure", and IIMG0616 "A novel material to cap the NiFe(free layer)MgO MTJ to enhance dR/R and method of forming the cap structure"
基板上に磁気ピンニング層を形成するステップと、磁気ピンニング層の上に磁気ピンド層を形成するステップと、磁気ピンド層の上にトンネルバリア層を形成するステップと、トンネルバリア層の上に、Fe含有量が12原子%であるNiFe層とHf含有量が15原子%であるNiFeHf層とを磁歪定数の符号が互いに逆になるようにこの順に積層して複合フリー層を形成し、NiFe層およびNiFeHf層の磁歪を相殺させるステップと、複合フリー層におけるNiFeHf層の上に、TaとRuとを順次積層してなるキャップ層を形成するステップと、複合フリー層におけるNiFe層中に捕捉されている酸素を複合フリー層におけるNiFeHf層中に拡散させるのに十分な時間と温度下で加熱処理を行うことにより、トンネルバリア層と複合フリー層との界面を鮮鋭化させるステップとを含むようにしたものである。
Claims (18)
- 磁気モーメントを有するフリー層を含む磁気トンネル接合(MTJ)素子の製造方法であって、
基板上に磁気ピンニング層を形成するステップと、
前記磁気ピンニング層の上に磁気ピンド層を形成するステップと、
前記磁気ピンド層の上にトンネルバリア層を形成するステップと、
前記トンネルバリア層の上に、NiFe(ニッケル鉄)からなるフリー層と、NiFeHf(ニッケル鉄ハフニウム)からなる第1のキャップ層とを形成するステップと、
前記第1のキャップ層の上に、Ta(タンタル)とRu(ルテニウム)とを順次積層してなる第2のキャップ層を形成するステップと、
前記フリー層中に捕捉されている酸素を前記第1のキャップ層中に拡散させるのに十分な時間と温度下で加熱処理を行うことにより、前記トンネルバリア層と前記フリー層との界面を鮮鋭化させるステップと
を含み、
回転する基板上に、Fe含有量が12原子%のNiFeターゲットとHfターゲットとを並行スパッタすることにより、Hf含有量が15原子%のNiFeHfからなる前記第1のキャップ層を形成する
ことを特徴とする磁気トンネル接合素子の製造方法。 - 前記加熱処理の時間を1時間ないし10時間とし、加熱処理の温度を250°Cないし300°Cとする
ことを特徴とする請求項1に記載の磁気トンネル接合素子の製造方法。 - 前記トンネルバリア層を、AlOx(酸化アルミニウム)、MgO(酸化マグネシウム)、AlHfOx(アルミニウムハフニウム酸化物)、AlTiOx(アルミニウムチタン酸化物)、またはTiOx(チタン酸化物)からなる群から選ばれる酸化物により構成する
ことを特徴とする請求項1に記載の磁気トンネル接合素子の製造方法。 - 磁気モーメントを有するフリー層を含む磁気トンネル接合素子の製造方法であって、
基板上に磁気ピンニング層を形成するステップと、
前記磁気ピンニング層の上に磁気ピンド層を形成するステップと、
前記磁気ピンド層の上にトンネルバリア層を形成するステップと、
前記トンネルバリア層の上に、磁歪定数の符号が互いに逆である第1および第2のNiFe層からなる複合フリー層を形成し、それらの磁歪を相殺させるステップと、
前記複合フリー層の上に、NiFeHfからなる第1のキャップ層を形成するステップと、
前記第1のキャップ層の上に、TaとRuとを順次積層してなる第2のキャップ層を形成するステップと、
前記複合フリー層中に捕捉されている酸素を前記第1のキャップ層中に拡散させるのに十分な時間と温度下で加熱処理を行うことにより、前記トンネルバリア層と前記複合フリー層との界面を鮮鋭化させるステップと
を含むことを特徴とする磁気トンネル接合素子の製造方法。 - 前記第1のNiFe層を、Fe含有量が17.5原子%ないし21原子%のNiFe層とし、前記第2のNiFe層を、Fe含有量が12原子%のNiFe層とする
ことを特徴とする請求項4に記載の磁気トンネル接合素子の製造方法。 - 前記第1のNiFe層の膜厚を0.5nmないし2nmとし、前記第2のNiFe層の膜厚を1nmないし3nmとする
ことを特徴とする請求項4に記載の磁気トンネル接合素子の製造方法。 - 磁気モーメントを有するフリー層を含む磁気トンネル接合素子の製造方法であって、
基板上に磁気ピンニング層を形成するステップと、
前記磁気ピンニング層の上に磁気ピンド層を形成するステップと、
前記磁気ピンド層の上にトンネルバリア層を形成するステップと、
前記トンネルバリア層の上に、Fe含有量が12原子%であるNiFe層とHf含有量が15原子%であるNiFeHf層とを磁歪定数の符号が互いに逆になるようにこの順に積層して複合フリー層を形成し、前記NiFe層およびNiFeHf層の磁歪を相殺させるステップと、
前記複合フリー層におけるNiFeHf層の上に、TaとRuとを順次積層してなるキャップ層を形成するステップと、
前記複合フリー層におけるNiFe層中に捕捉されている酸素を前記複合フリー層におけるNiFeHf層中に拡散させるのに十分な時間と温度下で加熱処理を行うことにより、前記トンネルバリア層と前記複合フリー層との界面を鮮鋭化させるステップと
を含むことを特徴とする磁気トンネル接合素子の製造方法。 - 前記複合フリー層における前記NiFe層および前記NiFeHf層の膜厚を、それぞれ、2nmないし3nmおよび2.5nmないし5nmとする
ことを特徴とする請求項7に記載の磁気トンネル接合素子の製造方法。 - 前記複合フリー層の磁歪の値が2×10-6以下となるようにする
ことを特徴とする請求項7に記載の磁気トンネル接合素子の製造方法。 - 抵抗変化率dR/Rが40%以上となるように構成する
ことを特徴とする請求項7に記載の磁気トンネル接合素子の製造方法。 - 磁気モーメントを有するフリー層を含む磁気トンネル接合素子であって、
基板上に形成された磁気ピンニング層と、
前記磁気ピンニング層の上に形成された磁気ピンド層と、
前記磁気ピンド層の上に形成されたトンネルバリア層と、
前記トンネルバリア層の上に形成された、磁歪定数の符号が互いに逆である第1および第2のNiFe層からなる複合フリー層と、
前記複合フリー層の上に形成された、NiFeHfからなる第1のキャップ層と、
前記第1のキャップ層の上に形成された、TaとRuとを順次積層してなる第2のキャップ層と
を備えたことを特徴とする磁気トンネル接合素子。 - 前記第1のキャップ層のHf含有量が15原子%以下である
ことを特徴とする請求項11に記載の磁気トンネル接合素子。 - 前記トンネルバリア層が、AlOx、MgO、AlHfOx、AlTiOx、またはTiOxからなる群から選ばれる酸化物により構成されている
ことを特徴とする請求項11に記載の磁気トンネル接合素子。 - 前記第1のNiFe層のFe含有量が17.5原子%であり、前記第2のNiFe層のFe含有量が12原子%以下である
ことを特徴とする請求項11に記載の磁気トンネル接合素子。 - 前記第1のNiFe層の膜厚が0.5nmないし2nmであり、前記第2のNiFe層の膜厚が1nmないし3nmである
ことを特徴とする請求項11に記載の磁気トンネル接合素子。 - 前記複合フリー層の磁歪の値が2×10-6以下である
ことを特徴とする請求項15に記載の磁気トンネル接合素子。 - 抵抗変化率dR/Rが40%以上である
ことを特徴とする請求項15に記載の磁気トンネル接合素子。 - 膜厚が2nmないし3nmのNi88Fe12層と膜厚が4.5nmの(NiFe)85Hf15層とからなる2層構造のフリー層を有し、抵抗変化率dR/Rが47%以上である
ことを特徴とする磁気トンネル接合素子。
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Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7672093B2 (en) * | 2006-10-17 | 2010-03-02 | Magic Technologies, Inc. | Hafnium doped cap and free layer for MRAM device |
US8169753B2 (en) * | 2008-11-21 | 2012-05-01 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers |
US7808027B2 (en) * | 2009-01-14 | 2010-10-05 | Magic Technologies, Inc. | Free layer/capping layer for high performance MRAM MTJ |
US20100213073A1 (en) * | 2009-02-23 | 2010-08-26 | International Business Machines Corporation | Bath for electroplating a i-iii-vi compound, use thereof and structures containing same |
JPWO2011065323A1 (ja) | 2009-11-27 | 2013-04-11 | 日本電気株式会社 | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
KR101684915B1 (ko) * | 2010-07-26 | 2016-12-12 | 삼성전자주식회사 | 자기 기억 소자 |
US8786036B2 (en) * | 2011-01-19 | 2014-07-22 | Headway Technologies, Inc. | Magnetic tunnel junction for MRAM applications |
US8790798B2 (en) * | 2011-04-18 | 2014-07-29 | Alexander Mikhailovich Shukh | Magnetoresistive element and method of manufacturing the same |
US9159908B2 (en) | 2011-05-05 | 2015-10-13 | Headway Technologies, Inc. | Composite free layer within magnetic tunnel junction for MRAM applications |
US8686484B2 (en) | 2011-06-10 | 2014-04-01 | Everspin Technologies, Inc. | Spin-torque magnetoresistive memory element and method of fabricating same |
US9023219B2 (en) * | 2012-04-26 | 2015-05-05 | Everspin Technologies, Inc. | Method of manufacturing a magnetoresistive device |
US8901687B2 (en) | 2012-11-27 | 2014-12-02 | Industrial Technology Research Institute | Magnetic device with a substrate, a sensing block and a repair layer |
US9183858B2 (en) * | 2014-01-28 | 2015-11-10 | HGST Netherlands B.V. | Dual capping layer utilized in a magnetoresistive effect sensor |
KR102466342B1 (ko) | 2015-06-11 | 2022-11-15 | 삼성전자주식회사 | 자기 메모리 소자 |
KR102678768B1 (ko) | 2015-10-29 | 2024-06-27 | 삼성전자주식회사 | 막 형성 방법 및 이를 이용한 자기 기억 소자의 제조방법 |
JP6806375B2 (ja) * | 2015-11-18 | 2021-01-06 | 国立大学法人東北大学 | 磁気トンネル接合素子及び磁気メモリ |
US9963780B2 (en) * | 2015-12-03 | 2018-05-08 | International Business Machines Corporation | Growth of metal on a dielectric |
EP3284091B1 (en) | 2015-12-10 | 2021-08-18 | Everspin Technologies, Inc. | Magnetoresistive stack, seed region therefor and method of manufacturing same |
US10483320B2 (en) | 2015-12-10 | 2019-11-19 | Everspin Technologies, Inc. | Magnetoresistive stack with seed region and method of manufacturing the same |
US10361361B2 (en) * | 2016-04-08 | 2019-07-23 | International Business Machines Corporation | Thin reference layer for STT MRAM |
KR102611463B1 (ko) | 2016-08-02 | 2023-12-08 | 삼성전자주식회사 | 자기 기억 소자 및 그 제조방법 |
US11415645B2 (en) * | 2019-08-23 | 2022-08-16 | Western Digital Technologies, Inc. | Magnetic sensor array with one TMR stack having two free layers |
JP2021144967A (ja) | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | 記憶装置 |
KR20220161605A (ko) | 2021-05-27 | 2022-12-07 | 삼성전자주식회사 | 자기 기억 소자 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5274661A (en) * | 1992-12-07 | 1993-12-28 | Spectra Physics Lasers, Inc. | Thin film dielectric coating for laser resonator |
US6226159B1 (en) * | 1999-06-25 | 2001-05-01 | International Business Machines Corporation | Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors |
JP2002008213A (ja) * | 2000-06-21 | 2002-01-11 | Nec Corp | 磁気抵抗効果素子の製造方法 |
US6574079B2 (en) * | 2000-11-09 | 2003-06-03 | Tdk Corporation | Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys |
US6710987B2 (en) * | 2000-11-17 | 2004-03-23 | Tdk Corporation | Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes |
KR100954970B1 (ko) * | 2001-10-12 | 2010-04-29 | 소니 주식회사 | 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법 |
JP2003338644A (ja) * | 2001-11-19 | 2003-11-28 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP2003198003A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
US6831312B2 (en) * | 2002-08-30 | 2004-12-14 | Freescale Semiconductor, Inc. | Amorphous alloys for magnetic devices |
JP3699954B2 (ja) * | 2002-10-25 | 2005-09-28 | 株式会社東芝 | 磁気メモリ |
US6903909B2 (en) * | 2002-11-01 | 2005-06-07 | Hewlett-Packard Development Company, L.P. | Magnetoresistive element including ferromagnetic sublayer having smoothed surface |
JP2004200245A (ja) * | 2002-12-16 | 2004-07-15 | Nec Corp | 磁気抵抗素子及び磁気抵抗素子の製造方法 |
JP2004335931A (ja) * | 2003-05-12 | 2004-11-25 | Alps Electric Co Ltd | Cpp型巨大磁気抵抗効果素子 |
JP2005032780A (ja) * | 2003-07-07 | 2005-02-03 | Tdk Corp | 磁気抵抗効果素子、これを用いた磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置 |
US7026673B2 (en) * | 2003-12-11 | 2006-04-11 | International Business Machines Corporation | Low magnetization materials for high performance magnetic memory devices |
JP2005203701A (ja) * | 2004-01-19 | 2005-07-28 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
US7122852B2 (en) * | 2004-05-12 | 2006-10-17 | Headway Technologies, Inc. | Structure/method to fabricate a high performance magnetic tunneling junction MRAM |
US20050258491A1 (en) * | 2004-05-14 | 2005-11-24 | International Business Machines Corporation | Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides |
US7449345B2 (en) * | 2004-06-15 | 2008-11-11 | Headway Technologies, Inc. | Capping structure for enhancing dR/R of the MTJ device |
US7072208B2 (en) * | 2004-07-28 | 2006-07-04 | Headway Technologies, Inc. | Vortex magnetic random access memory |
US20080008908A1 (en) * | 2004-11-22 | 2008-01-10 | Nec Corporation | Ferromagnetic Film, Magneto-Resistance Element And Magnetic Random Access Memory |
JP2006147947A (ja) * | 2004-11-22 | 2006-06-08 | Toshiba Corp | 磁気抵抗効果素子およびその製造方法 |
JP2006245229A (ja) * | 2005-03-02 | 2006-09-14 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP4533807B2 (ja) * | 2005-06-23 | 2010-09-01 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
JP2007270586A (ja) | 2006-03-31 | 2007-10-18 | Aisin Kiko Co Ltd | 車両用ドアロック装置 |
US7528457B2 (en) * | 2006-04-14 | 2009-05-05 | Magic Technologies, Inc. | Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R |
US7595520B2 (en) | 2006-07-31 | 2009-09-29 | Magic Technologies, Inc. | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same |
US7672093B2 (en) | 2006-10-17 | 2010-03-02 | Magic Technologies, Inc. | Hafnium doped cap and free layer for MRAM device |
US7663131B2 (en) * | 2007-03-08 | 2010-02-16 | Magic Technologies, Inc. | SyAF structure to fabricate Mbit MTJ MRAM |
US7602033B2 (en) * | 2007-05-29 | 2009-10-13 | Headway Technologies, Inc. | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer |
US8372661B2 (en) * | 2007-10-31 | 2013-02-12 | Magic Technologies, Inc. | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same |
-
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