JP4994248B2 - ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 - Google Patents

２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 Download PDF

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JP4994248B2
JP4994248B2 JP2007558164A JP2007558164A JP4994248B2 JP 4994248 B2 JP4994248 B2 JP 4994248B2 JP 2007558164 A JP2007558164 A JP 2007558164A JP 2007558164 A JP2007558164 A JP 2007558164A JP 4994248 B2 JP4994248 B2 JP 4994248B2
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target
targets
periodic
beams
sine wave
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JP2008532320A5 (enExample
JP2008532320A (ja
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フロマー・アビブ
レビンスキ・ブラディミル
スミス・マーク・ディ．
バイルス・ジェフリー
マック・クリス・エー．
アデル・マイケル・イー．
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007558164A 2005-03-01 2006-02-28 ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 Active JP4994248B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US65805605P 2005-03-01 2005-03-01
US60/658,056 2005-03-01
US72591805P 2005-10-11 2005-10-11
US60/725,918 2005-10-11
PCT/US2006/007195 WO2006094021A2 (en) 2005-03-01 2006-02-28 Target acquisition and overlay metrology based on imaging by two diffracted orders

Publications (3)

Publication Number Publication Date
JP2008532320A JP2008532320A (ja) 2008-08-14
JP2008532320A5 JP2008532320A5 (enExample) 2009-03-19
JP4994248B2 true JP4994248B2 (ja) 2012-08-08

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US (1) US7528953B2 (enExample)
JP (1) JP4994248B2 (enExample)
WO (1) WO2006094021A2 (enExample)

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IL217843A (en) * 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
NL2009001A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and patterning devices for measuring phase aberration.
KR101761735B1 (ko) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
NL2010259A (en) 2012-04-12 2013-10-16 Asml Holding Nv Position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method, optical element.
JP6353831B2 (ja) 2012-06-26 2018-07-04 ケーエルエー−テンカー コーポレイション 角度分解反射率測定における走査および回折の光計測からのアルゴリズム的除去
US9243886B1 (en) * 2012-06-26 2016-01-26 Kla-Tencor Corporation Optical metrology of periodic targets in presence of multiple diffraction orders
US9778025B2 (en) 2012-08-16 2017-10-03 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
NL2011476A (en) * 2012-10-02 2014-04-07 Asml Netherlands Bv Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method.
NL2011477A (en) * 2012-10-10 2014-04-14 Asml Netherlands Bv Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method.
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
CN105359039B (zh) * 2013-07-03 2018-08-10 Asml荷兰有限公司 检验设备和方法、光刻设备、光刻处理单元以及器件制造方法
US9719920B2 (en) 2013-07-18 2017-08-01 Kla-Tencor Corporation Scatterometry system and method for generating non-overlapping and non-truncated diffraction images
KR102202523B1 (ko) * 2013-07-18 2021-01-13 케이엘에이 코포레이션 스캐터로메트리 측정들을 위한 조명 구성들
US10585363B2 (en) 2015-06-05 2020-03-10 Asml Netherlands B.V. Alignment system
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WO2020046408A1 (en) 2018-08-28 2020-03-05 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
CN114096920B (zh) 2019-07-24 2024-10-29 Asml控股股份有限公司 芯片上晶片对准传感器
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11800212B1 (en) * 2022-04-08 2023-10-24 Kla Corporation Multi-directional overlay metrology using multiple illumination parameters and isolated imaging
JP7550814B2 (ja) * 2022-05-18 2024-09-13 キヤノン株式会社 検出装置、リソグラフィ装置、物品製造方法および検出システム
CN117572655B (zh) * 2023-11-17 2025-08-26 宜宾学院 一种衍射成像系统及图像的快速复原方法

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Publication number Publication date
US20060197951A1 (en) 2006-09-07
WO2006094021A2 (en) 2006-09-08
US7528953B2 (en) 2009-05-05
WO2006094021A3 (en) 2007-01-11
JP2008532320A (ja) 2008-08-14

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