JP4986347B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4986347B2
JP4986347B2 JP2001245939A JP2001245939A JP4986347B2 JP 4986347 B2 JP4986347 B2 JP 4986347B2 JP 2001245939 A JP2001245939 A JP 2001245939A JP 2001245939 A JP2001245939 A JP 2001245939A JP 4986347 B2 JP4986347 B2 JP 4986347B2
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Japan
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region
film
heat treatment
manufacturing
semiconductor device
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Expired - Fee Related
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JP2001245939A
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English (en)
Japanese (ja)
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JP2002141359A (ja
JP2002141359A5 (zh
Inventor
敦生 磯部
徹 高山
達也 荒尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001245939A priority Critical patent/JP4986347B2/ja
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Publication of JP2002141359A5 publication Critical patent/JP2002141359A5/ja
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Publication of JP4986347B2 publication Critical patent/JP4986347B2/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001245939A 2000-08-25 2001-08-14 半導体装置の作製方法 Expired - Fee Related JP4986347B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001245939A JP4986347B2 (ja) 2000-08-25 2001-08-14 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000256530 2000-08-25
JP2000256530 2000-08-25
JP2000-256530 2000-08-25
JP2001245939A JP4986347B2 (ja) 2000-08-25 2001-08-14 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012001720A Division JP2012089878A (ja) 2000-08-25 2012-01-09 発光装置

Publications (3)

Publication Number Publication Date
JP2002141359A JP2002141359A (ja) 2002-05-17
JP2002141359A5 JP2002141359A5 (zh) 2008-07-10
JP4986347B2 true JP4986347B2 (ja) 2012-07-25

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ID=26598536

Family Applications (1)

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JP2001245939A Expired - Fee Related JP4986347B2 (ja) 2000-08-25 2001-08-14 半導体装置の作製方法

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JP (1) JP4986347B2 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012089878A (ja) * 2000-08-25 2012-05-10 Semiconductor Energy Lab Co Ltd 発光装置
JP2004138958A (ja) 2002-10-21 2004-05-13 Semiconductor Energy Lab Co Ltd 表示装置
KR101100875B1 (ko) * 2003-12-11 2012-01-02 삼성전자주식회사 결정화용 레이저빔 조사 장치, 이를 이용한 결정화 방법및 이를 포함하는 박막 트랜지스터 표시판의 제조 방법
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939865B2 (ja) * 1995-07-03 1999-08-25 カシオ計算機株式会社 薄膜半導体装置およびそれを用いた表示装置
JPH08316486A (ja) * 1995-05-17 1996-11-29 Sanyo Electric Co Ltd 薄膜半導体素子
JPH09289318A (ja) * 1996-04-19 1997-11-04 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH1093091A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 半導体装置の製造方法
JPH1098193A (ja) * 1996-09-19 1998-04-14 Sony Corp 薄膜半導体装置
JPH11103064A (ja) * 1997-09-26 1999-04-13 Sharp Corp 半導体装置の製造方法

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Publication number Publication date
JP2002141359A (ja) 2002-05-17

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