JP4982809B2 - Coaxial via connection structure - Google Patents

Description

  The present invention relates to a coaxial via connection structure useful for various mounting structures, particularly multilayer coaxial wiring, and a method for manufacturing the same.

  With the increase in speed and frequency of electronic devices, improvement in signal transmission characteristics is required for the wiring in the devices. For wiring in mounting structures such as semiconductor device packages, printed circuit boards, and flexible circuit boards, transmission line structures such as strip lines, microstrip lines, and planar waveguide lines are usually used to make the characteristic impedance constant. It has been.

In particular, among transmission line structures, a coaxial line has the most excellent signal transmission characteristics and is therefore widely used as a cable. In a mounting structure, for example, the coaxial line structure disclosed in Non-Patent Document 1 below is used. In addition, a manufacturing technique for realizing a coaxial line structure in a printed circuit board disclosed in Patent Document 1 below is known. Patent Document 2 listed below also discloses a method for manufacturing a multilayer fine wiring structure as a multilayer wiring process for silicon semiconductor devices.
RC Landis, "Buried Coaxial Conductors for High-Speed Interconnections", IEEE Trans. Components, Hybrids, and Manufacturing Tech., Vol.CHMT-10; No.2, pp. 204-208, 1987 JP 2003-249731 A JP 2003-309121 A

  However, the techniques described in Non-Patent Document 1 and Patent Document 1 realize planar wiring and do not consider a via connection structure necessary for multilayer wiring. Also, when using printed circuit technology, the minimum line width is about 10 to 20 microns, and different manufacturing processes must be used to realize finer wiring. On the other hand, Patent Document 2 proposes a coaxial line structure that can be developed into a multi-layer wiring by using a multi-layer wiring process for silicon semiconductor devices, but it is not possible to miniaturize the wiring to 10 microns or less in the mounting structure. After all it is difficult.

  Accordingly, in view of the circumstances as described above, the present invention provides a coaxial via connection structure corresponding to a coaxial line and a multilayer coaxial wiring using the coaxial line structure, which are necessary when multilayering the coaxial line structure, and further manufacturing the same. A manufacturing method capable of reducing the minimum line width from 10 microns or less to about 1 micron (that is, the same as the skin depth of the metal material for wiring) by using a multilayer wiring process for silicon semiconductor devices in the process. The issue is to provide.

  In order to achieve the above object, the coaxial via connection structure of the present invention is for via-connecting upper and lower coaxial lines located at different heights and extending in intersecting directions. A shield electrode wall having a height corresponding to, a lower layer connection opening at a position corresponding to the lower coaxial line in the shield electrode wall, and an upper layer connection opening at a position corresponding to the upper coaxial line in the shield electrode wall And a signal line that connects between the lower layer connection opening and the upper layer connection opening in the shield electrode wall, and is disposed at a position where the upper and lower coaxial lines intersect and is positioned at the lower layer connection opening. The lower-layer coaxial line and the upper-layer coaxial line located in the upper-layer connection opening are connected by a signal line.

  The signal line includes a lower layer line portion extending from the lower layer connection opening into the shield electrode wall, an upper layer line portion extending from the upper layer connection opening into the shield electrode wall, and a line portion connecting the lower layer line portion and the upper layer line portion. have. One end of the signal line is connected to the lower coaxial line at the lower layer connection opening, and the other end is connected to the upper coaxial line at the upper layer connection opening.

  The shield electrode wall and the signal line are metal, and the signal line has a line width of 10 μm or less. The multilayer coaxial wiring uses the coaxial via connection structure.

And furthermore, the manufacturing method of the coaxial via connection structure of the present invention,
A ground metal layer is deposited on the substrate, an insulating layer is applied on the ground metal layer, and the lower half (V1) and the lower layer of the lower layer portion of the shield electrode wall of the coaxial via connection structure are applied to the insulating layer. Forming a groove pattern corresponding to the lower half (LL1) of the shield electrode wall of the coaxial line and filling the groove pattern with metal to form the lower half (V1) and the lower half (LL1) When,
After forming a pattern corresponding to the signal line of the lower layer line portion constituting the signal line in the coaxial via connection structure and the lower layer coaxial line to which the coaxial via connection structure is connected, and depositing the wiring metal layer, Removing the wiring metal layer and forming the lower line portion and the signal line;
An insulating layer is further applied to the upper half (V2) of the lower layer portion of the shield electrode wall of the coaxial via connection structure, an upper half (LL2) of the lower shield electrode wall of the coaxial line, and A groove and a hole pattern corresponding to the lower half (C1) of the line portion constituting the signal line in the coaxial via connection structure are formed, and the groove and the hole pattern are filled with metal, and the upper half (V2), Forming an upper half (LL2) and the lower half (C1);
After forming a ground layer pattern to be the upper surface portion (LL3) of the shield electrode of the lower coaxial line and the lower surface portion (UL1) of the shield electrode of the upper coaxial line, and depositing a ground metal layer, the ground layer Removing the ground metal layer on the pattern to form the upper surface portion (LL3) and the lower surface portion (UL1);
An insulating layer is further applied to the insulating layer, the lower half (V3) of the upper layer portion of the shield electrode wall of the coaxial via connection structure, the lower half (UL2) of the shield electrode wall of the upper coaxial line, and A groove and a hole pattern of an insulating layer corresponding to the upper half (C2) of the line portion constituting the signal line in the coaxial via connection structure are formed, and the groove and the hole pattern are filled with metal, and the lower half (V3 ), Forming the lower half (UL2) and the upper half (C2);
A pattern corresponding to an upper layer line portion constituting a signal line in the coaxial via connection structure and a signal line of an upper coaxial line to which the coaxial via connection structure is connected is formed, and after a wiring metal layer is deposited, Removing the wiring metal layer to form the upper layer line portion and the signal line;
An insulating layer is further applied, and the groove of the insulating layer corresponding to the upper half (V4) of the upper layer portion of the shield electrode wall of the coaxial via connection structure and the upper half (UL3) of the shield electrode wall of the upper coaxial line Forming a pattern and filling the groove pattern with metal to form the upper half (V4) and the upper half (UL3);
Forming a ground layer pattern to be the upper surface portion (UL4) of the shield electrode of the upper coaxial line, depositing a ground metal layer, and then removing the ground metal layer on the ground layer pattern;
It is characterized by including.

  According to the present invention having the features as described above, it is possible to provide a coaxial via connection structure corresponding to a coaxial line necessary for multilayering the coaxial line structure, and a multilayer coaxial wiring using the same, and a manufacturing process thereof Further, by using a multilayer wiring process for silicon semiconductor devices, the minimum line width can be miniaturized from 10 microns or less to about 1 micron (same as the skin depth of the wiring metal material).

The perspective view which showed one Embodiment of the coaxial type via | veer connection structure of this invention. The perspective view which showed one Embodiment of the coaxial type via | veer connection structure of this invention. 1B is a transparent perspective view illustrating the coaxial via connection structure of FIG. 1A and its periphery in a multilayer coaxial wiring. FIG. Coaxial via connection structure and transparent perspective view illustrating the periphery thereof in FIG. 1A in the multilayer coaxial wiring. The figure for demonstrating arrangement | positioning of the coaxial via | veer connection structure of this invention in a multilayer coaxial wiring. The figure for demonstrating the connection direction of the coaxial line by the coaxial via | veer connection structure of this invention. The another figure for demonstrating the connection direction of the coaxial line by the coaxial via | veer connection structure of this invention. The flowchart for demonstrating one Embodiment of the manufacturing method of the multilayer coaxial wiring of this invention. The flowchart following FIG. 5A. The flowchart following FIG. 5B. The flowchart following FIG. 5C. The figure for demonstrating the site | part formed in each step of FIG. 5A-FIG. 5D. The figure for demonstrating the site | part formed in each step of FIG. 5A-FIG. 5D. The figure for demonstrating the site | part formed in each step of FIG. 5A-FIG. 5D. The perspective view which showed another one Embodiment of the coaxial via | veer connection structure of this invention. The perspective view which showed another one Embodiment of the coaxial via | veer connection structure of this invention. The perspective view which showed the reference example of the coaxial via | veer connection structure of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coaxial via connection structure 11 Shield electrode wall 12a Lower layer connection opening 12b Upper layer connection opening 13 Signal line 131 Lower layer horizontal line part 132 Upper layer horizontal line part 133 Vertical line part 14 Insulating layer 2a, 2a ', 2a "Coaxial line 2b Coaxial line 21a, 21b Signal line 30 Substrate 31 Ground metal layer 32 Photosensitive insulating layer 33 Photomask 331 Pattern 34 Groove pattern 35 Metal 36 Resist pattern 37 Wiring metal layer 38 Photosensitive insulating layer 39 Photomask 391 Pattern 40 Groove and hole pattern 41 Metal 42 resist pattern 43 ground metal layer 44 photosensitive insulating layer 45 photomask 451 pattern 46 groove and hole pattern 47 metal 48 resist pattern 49 wiring metal layer 50 photosensitive insulating layer 51 photomask 511 pattern 52 groove pattern Down 53 metal 54 resist pattern 55 ground metal layer

[First embodiment]
1A and 1B are diagrams showing an embodiment of the coaxial via connection structure of the present invention, respectively. FIGS. 2A and 2B are coaxial via connection structures in a multilayer coaxial wiring structure and their surroundings, respectively. FIG. 3 is a diagram showing an arrangement example of the coaxial via connection structure in the multilayer coaxial wiring structure.

  The coaxial via connection structure 1 of the present embodiment is disposed at a position where two coaxial lines 2a and 2b (see FIGS. 2A, 2B, and 3) that are located at different heights and extend in intersecting directions intersect each other. The coaxial lines 2a and 2b are connected via vias. More specifically, the coaxial via connection structure 1 has a height required to connect two coaxial lines 2a and 2b located at different heights in the vertical direction, that is, the coaxial lines 2a and 2b in the upper and lower layers. A shield electrode wall 11 having a prismatic shape having a reachable height, a lower layer connection opening 12a formed at one side of the shield electrode wall 11 at the height position of the lower coaxial line 2a, and another one of the shield electrode wall 11 An upper layer connection opening 12b formed at the height of the upper coaxial line 2b on the side surface and one line formed to connect the lower layer connection opening 12a and the upper layer connection opening 12b in the shield electrode wall 11 Signal line 13.

  The inside surrounded by the shield electrode wall 11 is an insulating layer 14 and surrounds the periphery of the signal line 13. In other words, the coaxial line via structure is formed by surrounding the signal line 13 with the insulating layer 14 and covering the outside of the insulating layer 14 with the shield electrode wall 11.

  The signal line 13 includes a lower layer horizontal line part 131 extending in the horizontal direction from the lower layer connection opening 12a into the shield electrode wall 11, and an upper layer horizontal line part 132 extending in the horizontal direction from the upper layer connection opening 12b to the shield electrode wall 11. And a vertical line portion 133 extending in the vertical direction connecting the inner end of the lower layer horizontal line portion 131 and the inner end of the upper layer horizontal line portion 132, and these lower layer connection openings 12 a and the upper layer connection openings A signal line 13 extending between the portions 12b is formed.

  The line segments constituting the signal line 13 in this embodiment are assumed to extend in the horizontal direction and the vertical direction, respectively, but if the signal line 13 connecting the lower coaxial line 2a and the upper coaxial line 2b is configured. Since it is good, it is not particularly limited to horizontal and vertical, and various shapes such as those extending in an oblique direction and those having a curved corner instead of a right angle can be adopted.

  The connection end of the lower horizontal line portion 131 is connected to the lower coaxial line 2a at the lower layer connection opening 12a, and the connection end of the upper horizontal line portion 132 is connected to the upper coaxial line 2b at the upper layer connection opening 12b. Thus, the coaxial lines 2a and 2b can be accurately via-connected.

  For example, as illustrated in FIG. 3, the coaxial via shown in FIGS. 1A and 2A is formed at a point P1 where the lower coaxial line 2a 'running in the vertical direction in the drawing intersects with the upper coaxial line 2b running in the horizontal direction in the drawing. The wiring structure 1 is arranged, and the coaxial via wiring structure 1 shown in FIGS. 1B and 2B is arranged at a point P2 where the same coaxial line 2b and another lower coaxial line 2a ″ intersect, so that the coaxial line at the intersection P1. Turn 90 degrees to the left from 2a ′ and connect to the coaxial line 2b. Further, turn 90 degrees to the right from the coaxial line 2b and connect to the coaxial line 2a ″ at the intersection P2, and the points A and B are connected. .

  That is, according to the coaxial via connection structure 1 of the present invention, not only can the upper and lower coaxial lines 2a (2a ', 2a ") and 2b be connected in the multilayer coaxial wiring structure, but they are located in different layers and orthogonal to each other. The coaxial lines 2a and 2b extending in the direction to be connected can be connected in a three-dimensional direction.

  4A and 4B are diagrams showing eight types of connection modes that can be taken when connecting the upper and lower coaxial lines 2a and 2b using the coaxial via connection structure 1 of the present invention. 4A shows four types of connecting to the upper coaxial line 2b by turning 90 degrees to the left from the lower coaxial line 2a by changing the direction of the coaxial via connection structure 1 in FIG. 1A. By changing the direction of the coaxial via connection structure 1, four types are shown that turn 90 degrees to the right from the lower coaxial line 2 a and connect to the upper coaxial line 2 b. As can be seen from these figures, the coaxial via connection structure 1 is aggregated into two types of structures shown in FIGS. 1A and 1B, and if these two types are designed, prototyped, and evaluated for characteristics, four types of connections are made. The form, that is, eight kinds of connection forms in total can be realized.

[Second Embodiment]
FIGS. 5A to 5D are flowcharts for explaining an example of a method for manufacturing a multilayer coaxial wiring using the coaxial via connection structure 1 of the present invention described above, and upper and lower coaxial lines 2a to be connected. , 2b are formed simultaneously with the coaxial via connection structure 1. Hereinafter, the process will be described in the order of step numbers in the figure. 6A, 6B, and 7 show to which part the parts with symbols such as V1, LL1, and UL1 used in the description of each step correspond, and FIGS. Reference is made as appropriate.

<Step S1>
Ground metal layer of gold, silver, copper, etc. on a substrate 30 such as silicon, sapphire, quartz, silicon nitride, aluminum nitride, compound semiconductor (gallium arsenide GaAs, gallium nitride GaN, silicon carbide SiC, indium phosphide InP, etc.), diamond, etc. 31 is deposited by a method such as vacuum evaporation, sputtering, CVD, or plating. The ground metal layer 31 forms a lower surface portion of the shield electrode wall of the lower coaxial line 2a to which the coaxial via connection structure 1 is connected.

<Step S2>
One of the shield electrode walls 11 of the coaxial via connection structure 1 is applied by applying a photosensitive insulating layer 32 in which a diazo photosensitizer is added to a resin such as polyimide, benzocyclobutene BCB, polyamide, or polyoxazole, and irradiating UV light or the like. Photo including pattern 331 corresponding to part (V1) (see FIGS. 6A and 6B) and part of shield electrode wall (LL1) (see FIGS. 2A, 2B and 7) of lower coaxial line 2a (see FIG. 2) Exposure is performed using a mask 33. As the polyimide, block copolymerized polyimide is desirable.

  The part (V1) here is a portion corresponding to the lower half of the lower layer portion of the coaxial via connection structure 1, and has an opening corresponding to the shape of the lower half of the lower layer connection opening 12a. ing. The part (LL1) is a portion corresponding to the lower half of the lower coaxial line 2a connected to the coaxial via connection structure 1.

<Step S3>
The exposed photosensitive insulating layer 32 is developed to form a groove pattern 34 of the insulating layer 14 (see FIG. 1) corresponding to the part (V1) of the shield electrode wall 11 of the coaxial via connection structure 1.

<Step S4>
The groove pattern 34 is filled with a metal 35 such as gold, silver, or copper by electroless or electrolytic plating.

  Thereby, the part (V1) of the shield electrode wall 11 of the coaxial via connection structure 1 and the part (LL1) of the shield electrode wall of the lower coaxial line 2a are formed simultaneously. By forming the part (V1), the lower half of the lower layer connection opening 12a is formed.

<Step S5>
The lower horizontal line 131 (see FIGS. 6A and 6B) constituting the signal line 13 in the coaxial via connection structure 1 and the signal line 21a of the lower coaxial line 2a to which the coaxial via connection structure 1 is connected (FIGS. 2A, B, and 7). A resist pattern 36 corresponding to the reference) is formed by a lithography process using UV or the like, and a wiring metal layer 37 such as gold, silver, or copper is deposited by a method such as vacuum deposition, sputtering, CVD, or plating. Thereafter, the wiring metal layer 37 on the resist pattern 36 is infiltrated with a solvent and removed by a lift-off method. As a result, the signal line 21a of the lower coaxial line 2a connected to the lower horizontal line 131 constituting the signal line 13 in the coaxial via connection structure 1 and the coaxial via connection structure 1 is formed.

<Step S6>
Further, a photosensitive insulating layer 38 is further applied and irradiated with UV light or the like to shield the other part (V2) (see FIGS. 6A and 6B) of the shield electrode wall 11 of the coaxial via connection structure 1 and the lower coaxial line 2a. The other half of the electrode wall (LL2) (see FIGS. 2A and 2B, FIG. 7) and the lower half (C1) of the vertical line portion 133 constituting the signal line 13 in the coaxial via connection structure 1 (FIGS. 6A, B, Exposure is performed using a photomask 39 including a pattern 391 corresponding to FIG. The part (V2) here is a part corresponding to the upper half of the lower layer part of the coaxial via connection structure 1 following the part (V1), and is the upper half of the lower layer connection opening 12a. An opening corresponding to the shape is provided. The part (LL2) is a part corresponding to the upper half of the lower-layer coaxial line 2a connected to the coaxial via connection structure 1 following the part (LL1).

<Step S7>
The exposed photosensitive insulating layer 38 is developed, the part (V2) of the shield electrode wall 11 of the coaxial via connection structure 1, the part (LL2) of the shield electrode wall of the lower coaxial line 2a, and the signal An insulating layer groove and hole pattern 40 corresponding to the lower half (C1) of the vertical line portion 133 of the line 13 is formed.

<Step S8>
The groove and hole pattern 40 is filled with a metal 41 such as gold, silver, or copper by electroless or electrolytic plating. Thereby, following the part (V1) of the shield electrode wall 11 of the coaxial via connection structure 1 and the part (LL1) of the shield electrode wall of the lower coaxial line 2a formed in the step S4, the coaxial via The part (V2) of the shield electrode wall 11 of the connection structure 1, the part (LL2) of the shield electrode wall of the lower coaxial line 2a, and the lower half (C1) of the vertical line part 133 of the signal line 13 It is formed. The upper half of the lower layer connection opening 12a is formed by the formation of the part (V1).

<Step S9>
Subsequently, still another part (LL3) of the shield electrode of the lower coaxial line 2a (see FIGS. 2A and B, FIG. 7) and a part of the shield electrode (UL1) of the upper coaxial line 2b (FIG. 2A, B) A resist pattern 42 for the ground layer common to the coaxial lines 2a and 2b is formed by a lithography process using UV or the like, and a ground metal layer 43 such as gold, silver, or copper is vacuum-deposited and sputtered. It deposits by methods, such as CVD and plating. Thereafter, the ground metal layer 43 on the resist pattern 42 is infiltrated with a solvent and removed by a lift-off method. The part (LL3) here is a part corresponding to the ground layer of the upper surface portion of the lower coaxial line 2a connected to the coaxial via connection structure 1, and part (UL1) is This is a portion corresponding to the ground layer of the lower surface portion of the upper coaxial line 2 b connected to the coaxial via connection structure 1.

  Thereby, the part (LL3) of the shield electrode of the lower coaxial line 2a and the part (UL1) of the shield electrode of the upper coaxial line 2b are formed. That is, at this stage, the lower half of the coaxial via connection structure 1 and the lower coaxial line 2a connected thereto, that is, the lower layer portion in the multilayer coaxial wiring structure are produced. The lower surface portion of the upper coaxial line 2b is formed at the same time as the upper surface portion of the lower coaxial line 2a, because the ground layer is common to the coaxial lines 2a and 2b.

<Step S10>
A photosensitive insulating layer 44 is applied and irradiated with UV light or the like, and yet another part (V3) of the shield electrode wall 11 of the coaxial via connection structure 1 (see FIGS. 6A and 6B), the shield of the upper coaxial line 2b. The other half of the electrode wall (UL2) (see FIGS. 2A, B, and 7) and the upper half (C2) of the vertical line portion 133 that constitutes the signal line 13 in the coaxial via connection structure 1 (FIGS. 6A and B) And exposure is performed using a photomask 45 including a pattern 451 corresponding to FIG. The part (V3) here is a part corresponding to the lower half of the upper layer part of the coaxial via connection structure 1 following the part (V2), and is the lower half of the upper layer connection opening 12b. An opening corresponding to the shape is provided. The part (UL2) is a part corresponding to the lower half of the upper coaxial line 2b connected to the coaxial via connection structure 1 following the part (UL1).

<Step S11>
The exposed photosensitive insulating layer 44 is developed, the part (V3) of the shield electrode wall 11 of the coaxial via connection structure 1, the part (UL2) of the shield electrode wall of the upper coaxial line 2b, and the signal An insulating layer groove and hole pattern 46 corresponding to the upper half (C2) of the vertical line portion 133 of the line 13 is formed.

<Step S12>
The groove and hole pattern 46 is filled with a metal 47 such as gold, silver, or copper by electroless or electrolytic plating. Thereby, a part (V1) (V2) of the shield electrode wall 11 of the coaxial via connection structure 1 formed in steps S4 and S8, one of the shield electrode walls of the upper coaxial line 2b formed in S9. Next to the lower half (C1) of the vertical line portion 133 of the signal line 13 formed in the portion (UL1) and S7, the above part (V3) of the shield electrode wall 11 of the coaxial via connection structure 1, the upper layer The part (UL2) of the shield electrode wall of the coaxial line 2b and the upper half (C2) of the vertical line part 133 of the signal line 13 are formed. In addition, the lower half of the upper layer connection opening 12b is formed by forming the part (V3).

<Step S13>
Resist pattern 48 corresponding to the upper horizontal line 132 (see FIGS. 6A and 6B) constituting the signal line 13 in the coaxial via connection structure 1 and the signal line 21b (see FIGS. 2A, B and 7) of the upper coaxial line 2b. Is formed by a lithography process using UV or the like, and a wiring metal layer 49 such as gold, silver, or copper is deposited by a method such as vacuum evaporation, sputtering, CVD, or plating. Thereafter, the wiring metal layer 49 on the resist pattern 48 is infiltrated with a solvent and removed by a lift-off method. As a result, the signal line 21b of the upper coaxial line 2b connected to the upper horizontal line portion 132 of the signal line 13 in the coaxial via connection structure 1 and the coaxial via connection structure 1 is formed.

<Step S14>
A photosensitive insulating layer 50 is applied and irradiated with UV light or the like, yet another part (V4) (see FIGS. 6A and 6B) of the shield electrode wall 11 of the coaxial via connection structure 1 and the upper coaxial line 2b. It exposes using the photomask 51 containing the pattern 511 corresponding to other part (UL3) (refer FIG. 2A, B, FIG. 7) of a shield electrode wall. The part (V4) here is a part corresponding to the upper half of the upper layer part of the coaxial via connection structure 1 following the part (V3), and is the upper half of the upper layer connection opening 12b. An opening corresponding to the shape is provided. The part (UL3) is a part corresponding to the upper half of the upper coaxial line 2b connected to the coaxial via connection structure 1 following the part (UL2).

<Step S15>
The exposed photosensitive insulating layer 50 is developed, and the insulation corresponding to the part (V4) of the shield electrode wall 11 of the coaxial via connection structure 1 and the part (UL3) of the shield electrode wall of the upper coaxial line 2b is developed. A layer groove pattern 52 is formed.

<Step S16>
The groove pattern 52 is filled with a metal 53 such as gold, silver, or copper by electroless or electrolytic plating. Thereby, a part (V1) (V2) (V3) of the shield electrode wall 11 of the coaxial via connection structure 1 formed in steps S4, S8 and S12 and the upper coaxial line formed in S9 and S12. Following the part (UL1) (UL2) of the shield electrode wall 2b, the part (V4) of the shield electrode wall 11 of the coaxial via connection structure 1 and the part of the shield electrode wall of the upper coaxial line 2b are further provided. (UL3) is formed. The upper half of the upper layer connection opening 12b is formed by the formation of the part (V4).

<Step S17>
A ground layer resist pattern 54 to be yet another part (UL4) of the shield electrode of the upper coaxial line 2b is formed by a lithography process using UV or the like, and a ground metal layer 55 such as gold, silver, or copper is formed. Is deposited by a method such as vacuum vapor deposition, sputtering, CVD, or plating. Thereafter, the ground metal layer 55 on the resist pattern 54 is infiltrated with a solvent and removed by a lift-off method. The part (UL4) here is a portion corresponding to the ground layer on the upper surface portion of the upper coaxial line 2b. That is, at this stage, the upper half of the coaxial via connection structure 1 and the upper coaxial line 2b connected thereto, that is, the upper layer portion in the multilayer coaxial wiring structure are produced.

<Step S18>
Thus, a multilayer coaxial wiring structure including the coaxial via connection structure 1 that connects the coaxial lines 2a and 2b (see FIGS. 2A and 2B) orthogonal to each other in the upper and lower layers is completed. The signal line 13 of the coaxial via connection structure 1 can have a line width of 10 μm or less.

<Variation of each treatment>
In the above manufacturing method, the direct lithography process using a laser beam or an electron beam can be applied instead of the UV lithography process.

  Regarding the formation of the groove or hole pattern 34, 40, 46, 52 of the insulating layer 14 in steps S3, S7, S11, S15, dry etching, chemical etching, etc. using a non-photosensitive insulating layer to which no photosensitive agent is added. It is also possible to form by etching.

  The ground metal layer 31 formed in step S1 is a solid film formed on the entire surface of the substrate 30, but after forming a groove-like resist pattern having the same width as the lower coaxial line 2a, a metal film is deposited, By the lift-off method, a strip shape having the same width as that of the lower coaxial line 2a can be formed.

<CAD system>
When executing the manufacturing process as described above, for example, using the wiring layout CAD system, the coaxial via connection structure 1 is registered as cell data, and coaxial line arrays as illustrated in FIG. 3 are arranged in multiple layers. Coaxial connection between the coaxial lines 2a and 2b via the coaxial via connection structure 1 by arranging the cell data of the coaxial via connection structure 1 at the intersections of arbitrary coaxial lines 2a and 2b using the above as a basic arrangement pattern A track can be formed. When arranging the cell data of the coaxial via connection structure 1, the data of the coaxial line may need to be cut and deleted according to the outline of the cell data and replaced with the cell data of the coaxial via connection structure. is there.

[Third embodiment]
In each of the embodiments described above, two layers of coaxial line trains have been described. Of course, for coaxial line trains of three or more layers, the coaxial via connection structure 1 is disposed at the intersection of adjacent orthogonal coaxial lines. Complex wiring can be formed. In this case, the coaxial via connection structure 1 includes a shield electrode wall 11 having a height corresponding to a plurality of layers, connection openings 12a, 12b... A multilayer coaxial wiring structure using the coaxial via connection structure 1 can be realized by having the signal line 13 and arranging the cell data at the intersection of a desired coaxial line array in the CAD system. The manufacturing process should just repeat each step in said 2nd embodiment.

[Fourth embodiment]
The lower layer connection opening 12a and the upper layer connection opening 12b provided in the shield electrode wall 11 are portions where the insulating layer 14 is exposed without the shield electrode wall 11, and in FIGS. 1A and 1B, the width of the shield electrode wall 11 is shown. However, the present invention is not limited to this as long as a multi-layer coaxial line can be connected. For example, as illustrated in FIGS. 8A and 8B, the width of the shield electrode wall 11 is substantially the same. It is good also as the same width. 8A and 8B show a form in which only the lower layer connection opening 12a has the same width, the upper layer connection opening 12b can of course have the same width.

[ Reference Example 1 ]
The shield electrode wall 11 of the coaxial via connection structure 1 has a prismatic shape in FIGS. 1A and B-FIGS. 2A and B, but is not limited to this as long as a multilayer coaxial line can be connected. For example, as illustrated in FIG. 9, it may be a columnar shape or another column shape.

[ Reference Example 2 ]
By using the coaxial via connection structure 1 of the present invention, a multilayer coaxial wiring structure in which the coaxial wiring is arranged in a meandering shape (a zigzag winding state), and the occupying area is significantly reduced compared to the prior art. A line structure can be realized.
While the present invention has been described based on the illustrated examples, the present invention is not limited to the above-described examples, and includes other configurations that can be easily modified by those skilled in the art within the scope of the claims.

Claims (4)

In the coaxial via connection structure in the multilayer coaxial wiring structure in which the upper and lower coaxial lines extending in the intersecting direction are located at different heights and via-connect,
A prismatic shield electrode wall having a height corresponding to the upper and lower coaxial lines;
A lower layer connection opening on one side surface of the shield electrode wall at a position corresponding to the lower layer coaxial line;
The upper layer connection opening on the other side surface at a position corresponding to the upper layer coaxial line in the shield electrode wall;
Has a signal line connecting between the lower connecting opening and the upper connection opening in the shield electrode wall,
The shield electrode wall is disposed at a position where the upper and lower coaxial lines intersect, and the lower coaxial line located in the lower layer connection opening and the upper coaxial line located in the upper layer connection opening are connected by the signal line. To connect ,
The signal line includes a lower layer line portion extending from the lower layer connection opening into the shield electrode wall, an upper layer line portion extending from the upper layer connection opening to the shield electrode wall, and a line portion connecting the lower layer line portion and the upper layer line portion. One end of the lower layer line portion is connected to the lower coaxial line at the lower layer connection opening, and one end of the upper layer line portion is connected to the upper coaxial line at the upper layer connection opening. A coaxial via connection structure in a multilayer coaxial wiring structure. The coaxial via connection structure in the multilayer coaxial wiring structure according to claim 1, wherein the shield electrode wall is made of metal. 2. The coaxial via connection structure in a multilayer coaxial wiring structure according to claim 1, wherein the signal line is a metal. The coaxial via connection structure in the multilayer coaxial wiring structure according to claim 1, wherein the signal line has a line width of 10 μm or less.

Images