JP4981307B2 - 電子装置、電子回路及び電子機器 - Google Patents

電子装置、電子回路及び電子機器 Download PDF

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Publication number
JP4981307B2
JP4981307B2 JP2005334333A JP2005334333A JP4981307B2 JP 4981307 B2 JP4981307 B2 JP 4981307B2 JP 2005334333 A JP2005334333 A JP 2005334333A JP 2005334333 A JP2005334333 A JP 2005334333A JP 4981307 B2 JP4981307 B2 JP 4981307B2
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region
fine particles
electronic device
metal
high resistance
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Japanese (ja)
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JP2007142180A5 (enExample
JP2007142180A (ja
Inventor
暢俊 洗
真臣 原田
浩一郎 足立
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Sharp Corp
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Sharp Corp
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  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2005334333A 2005-11-18 2005-11-18 電子装置、電子回路及び電子機器 Expired - Fee Related JP4981307B2 (ja)

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JP2005334333A JP4981307B2 (ja) 2005-11-18 2005-11-18 電子装置、電子回路及び電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005334333A JP4981307B2 (ja) 2005-11-18 2005-11-18 電子装置、電子回路及び電子機器

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JP2007142180A JP2007142180A (ja) 2007-06-07
JP2007142180A5 JP2007142180A5 (enExample) 2008-08-21
JP4981307B2 true JP4981307B2 (ja) 2012-07-18

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JP2005334333A Expired - Fee Related JP4981307B2 (ja) 2005-11-18 2005-11-18 電子装置、電子回路及び電子機器

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Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05330854A (ja) * 1992-05-28 1993-12-14 Nippon Sheet Glass Co Ltd 超微粒子および／または超微細線含有ガラスの製造方法
JP3435791B2 (ja) * 1994-03-22 2003-08-11 ソニー株式会社 量子素子
JP3745015B2 (ja) * 1995-09-21 2006-02-15 株式会社東芝 電子デバイス
JP2003165713A (ja) * 2001-11-26 2003-06-10 Fujitsu Ltd 炭素元素円筒型構造体の製造方法
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4532086B2 (ja) * 2003-08-28 2010-08-25 シャープ株式会社 微粒子含有体の製造方法
JP2005086167A (ja) * 2003-09-11 2005-03-31 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
BE1015721A3 (nl) * 2003-10-17 2005-07-05 Imec Inter Uni Micro Electr Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting.
JP4619675B2 (ja) * 2004-03-24 2011-01-26 シャープ株式会社 非単調電流電圧特性機能体およびその製造方法
WO2006033794A2 (en) * 2004-09-21 2006-03-30 Fuji Electric Holdings Co., Ltd. Transistor with tunneling dust electrode

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JP2007142180A (ja) 2007-06-07

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