JP4981307B2 - 電子装置、電子回路及び電子機器 - Google Patents
電子装置、電子回路及び電子機器 Download PDFInfo
- Publication number
- JP4981307B2 JP4981307B2 JP2005334333A JP2005334333A JP4981307B2 JP 4981307 B2 JP4981307 B2 JP 4981307B2 JP 2005334333 A JP2005334333 A JP 2005334333A JP 2005334333 A JP2005334333 A JP 2005334333A JP 4981307 B2 JP4981307 B2 JP 4981307B2
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- Japan
- Prior art keywords
- region
- fine particles
- electronic device
- metal
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000010419 fine particle Substances 0.000 claims description 312
- 229910052751 metal Inorganic materials 0.000 claims description 131
- 239000002184 metal Substances 0.000 claims description 129
- 239000004065 semiconductor Substances 0.000 claims description 103
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 71
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- 230000008569 process Effects 0.000 description 49
- 239000000758 substrate Substances 0.000 description 44
- 238000002513 implantation Methods 0.000 description 43
- 239000012212 insulator Substances 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 230000004888 barrier function Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 20
- 238000002347 injection Methods 0.000 description 17
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- 239000011859 microparticle Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 230000005684 electric field Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000006870 function Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
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- 229910052735 hafnium Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005334333A JP4981307B2 (ja) | 2005-11-18 | 2005-11-18 | 電子装置、電子回路及び電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005334333A JP4981307B2 (ja) | 2005-11-18 | 2005-11-18 | 電子装置、電子回路及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007142180A JP2007142180A (ja) | 2007-06-07 |
| JP2007142180A5 JP2007142180A5 (enrdf_load_stackoverflow) | 2008-08-21 |
| JP4981307B2 true JP4981307B2 (ja) | 2012-07-18 |
Family
ID=38204687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005334333A Expired - Fee Related JP4981307B2 (ja) | 2005-11-18 | 2005-11-18 | 電子装置、電子回路及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4981307B2 (enrdf_load_stackoverflow) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05330854A (ja) * | 1992-05-28 | 1993-12-14 | Nippon Sheet Glass Co Ltd | 超微粒子および／または超微細線含有ガラスの製造方法 |
| JP3435791B2 (ja) * | 1994-03-22 | 2003-08-11 | ソニー株式会社 | 量子素子 |
| JP3745015B2 (ja) * | 1995-09-21 | 2006-02-15 | 株式会社東芝 | 電子デバイス |
| JP2003165713A (ja) * | 2001-11-26 | 2003-06-10 | Fujitsu Ltd | 炭素元素円筒型構造体の製造方法 |
| JP4541651B2 (ja) * | 2003-03-13 | 2010-09-08 | シャープ株式会社 | 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器 |
| JP4532086B2 (ja) * | 2003-08-28 | 2010-08-25 | シャープ株式会社 | 微粒子含有体の製造方法 |
| JP2005086167A (ja) * | 2003-09-11 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法 |
| BE1015721A3 (nl) * | 2003-10-17 | 2005-07-05 | Imec Inter Uni Micro Electr | Werkwijze voor het reduceren van de contactweerstand van de aansluitgebieden van een halfgeleiderinrichting. |
| JP4619675B2 (ja) * | 2004-03-24 | 2011-01-26 | シャープ株式会社 | 非単調電流電圧特性機能体およびその製造方法 |
| WO2006033794A2 (en) * | 2004-09-21 | 2006-03-30 | Fuji Electric Holdings Co., Ltd. | Transistor with tunneling dust electrode |
-
2005
- 2005-11-18 JP JP2005334333A patent/JP4981307B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007142180A (ja) | 2007-06-07 |
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