JP4978210B2 - バルク音響振動子の製造方法 - Google Patents
バルク音響振動子の製造方法 Download PDFInfo
- Publication number
- JP4978210B2 JP4978210B2 JP2007014669A JP2007014669A JP4978210B2 JP 4978210 B2 JP4978210 B2 JP 4978210B2 JP 2007014669 A JP2007014669 A JP 2007014669A JP 2007014669 A JP2007014669 A JP 2007014669A JP 4978210 B2 JP4978210 B2 JP 4978210B2
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- Prior art keywords
- temperature compensation
- film
- temperature
- frequency
- compensation film
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000005259 measurement Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- -1 TeO 5 Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910002555 FeNi Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 268
- 230000007423 decrease Effects 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007014669A JP4978210B2 (ja) | 2007-01-25 | 2007-01-25 | バルク音響振動子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007014669A JP4978210B2 (ja) | 2007-01-25 | 2007-01-25 | バルク音響振動子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008182512A JP2008182512A (ja) | 2008-08-07 |
| JP2008182512A5 JP2008182512A5 (enExample) | 2010-02-25 |
| JP4978210B2 true JP4978210B2 (ja) | 2012-07-18 |
Family
ID=39726073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007014669A Expired - Fee Related JP4978210B2 (ja) | 2007-01-25 | 2007-01-25 | バルク音響振動子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4978210B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9240767B2 (en) * | 2012-05-31 | 2016-01-19 | Texas Instruments Incorporated | Temperature-controlled integrated piezoelectric resonator apparatus |
| CN102904546B (zh) | 2012-08-30 | 2016-04-13 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
| JP6885533B2 (ja) * | 2017-01-27 | 2021-06-16 | 新日本無線株式会社 | バルク弾性波共振器の製造方法 |
| CN109831175B (zh) * | 2018-12-26 | 2023-10-20 | 天津大学 | 一种薄膜体声波谐振器 |
| CN115865037A (zh) * | 2022-12-17 | 2023-03-28 | 河源市艾佛光通科技有限公司 | 温度补偿型薄膜体声波滤波器及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5829211A (ja) * | 1981-08-13 | 1983-02-21 | Nec Corp | 薄膜圧電振動子 |
| JPS58137317A (ja) * | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
| JP3514222B2 (ja) * | 1999-11-17 | 2004-03-31 | 株式会社村田製作所 | 圧電共振子、電子部品及び電子機器 |
| JP3498682B2 (ja) * | 2000-06-23 | 2004-02-16 | 株式会社村田製作所 | 圧電共振子およびそれを用いた圧電フィルタ |
| DE10162580A1 (de) * | 2001-12-19 | 2003-07-17 | Infineon Technologies Ag | Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung |
| JP2005051685A (ja) * | 2003-07-31 | 2005-02-24 | Matsushita Electric Works Ltd | 超音波センサの共振周波数調整方法及び装置 |
| US7332985B2 (en) * | 2003-10-30 | 2008-02-19 | Avago Technologies Wireless Ip (Singapore) Pte Ltd. | Cavity-less film bulk acoustic resonator (FBAR) devices |
| JP2005184491A (ja) * | 2003-12-19 | 2005-07-07 | Mitsubishi Electric Corp | 圧電体薄膜素子ならびにその周波数調整方法および周波数調整装置 |
| JP2007006542A (ja) * | 2006-10-13 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 圧電薄膜振動子及びその共振周波数調整方法 |
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2007
- 2007-01-25 JP JP2007014669A patent/JP4978210B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008182512A (ja) | 2008-08-07 |
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