JP4977636B2 - 基板処理装置および半導体装置の製造方法 - Google Patents

基板処理装置および半導体装置の製造方法 Download PDF

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JP4977636B2
JP4977636B2 JP2008025891A JP2008025891A JP4977636B2 JP 4977636 B2 JP4977636 B2 JP 4977636B2 JP 2008025891 A JP2008025891 A JP 2008025891A JP 2008025891 A JP2008025891 A JP 2008025891A JP 4977636 B2 JP4977636 B2 JP 4977636B2
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processing chamber
ozone gas
gas
substrate
plasma
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JP2009188143A5 (enExample
JP2009188143A (ja
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英樹 堀田
優幸 浅井
謙和 水野
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2008025891A 2008-02-06 2008-02-06 基板処理装置および半導体装置の製造方法 Active JP4977636B2 (ja)

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JP2008025891A JP4977636B2 (ja) 2008-02-06 2008-02-06 基板処理装置および半導体装置の製造方法

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JP2008025891A JP4977636B2 (ja) 2008-02-06 2008-02-06 基板処理装置および半導体装置の製造方法

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JP2009188143A JP2009188143A (ja) 2009-08-20
JP2009188143A5 JP2009188143A5 (enExample) 2011-01-27
JP4977636B2 true JP4977636B2 (ja) 2012-07-18

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JP6415215B2 (ja) * 2014-09-26 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

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JPH07118522B2 (ja) * 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
JP4361179B2 (ja) * 1999-12-27 2009-11-11 東京エレクトロン株式会社 オゾン処理装置及びオゾン処理方法
JP4071968B2 (ja) * 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
JP2005277294A (ja) * 2004-03-26 2005-10-06 Nissin Electric Co Ltd 膜形成方法及び膜形成装置
CN100517599C (zh) * 2004-10-07 2009-07-22 株式会社日立国际电气 衬底处理装置以及半导体器件的制造方法

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