JP4963140B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4963140B2
JP4963140B2 JP2000057905A JP2000057905A JP4963140B2 JP 4963140 B2 JP4963140 B2 JP 4963140B2 JP 2000057905 A JP2000057905 A JP 2000057905A JP 2000057905 A JP2000057905 A JP 2000057905A JP 4963140 B2 JP4963140 B2 JP 4963140B2
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Japan
Prior art keywords
semiconductor layer
type
layer
insulating layer
gate electrode
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Expired - Fee Related
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JP2000057905A
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English (en)
Japanese (ja)
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JP2001250949A5 (enExample
JP2001250949A (ja
Inventor
律子 河崎
英人 北角
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000057905A priority Critical patent/JP4963140B2/ja
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Publication of JP2001250949A5 publication Critical patent/JP2001250949A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000057905A 2000-03-02 2000-03-02 半導体装置 Expired - Fee Related JP4963140B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000057905A JP4963140B2 (ja) 2000-03-02 2000-03-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000057905A JP4963140B2 (ja) 2000-03-02 2000-03-02 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010176064A Division JP4963328B2 (ja) 2010-08-05 2010-08-05 半導体装置
JP2011147889A Division JP5042378B2 (ja) 2011-07-04 2011-07-04 半導体装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2001250949A JP2001250949A (ja) 2001-09-14
JP2001250949A5 JP2001250949A5 (enExample) 2007-06-21
JP4963140B2 true JP4963140B2 (ja) 2012-06-27

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Family Applications (1)

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JP2000057905A Expired - Fee Related JP4963140B2 (ja) 2000-03-02 2000-03-02 半導体装置

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JP (1) JP4963140B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012156534A (ja) * 2012-03-28 2012-08-16 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193585A (ja) * 2002-11-29 2004-07-08 Fujitsu Ltd 半導体装置の製造方法と半導体装置
JP2005304230A (ja) * 2004-04-14 2005-10-27 Tokyo Coil Engineering Kk Ｄｃ−ｄｃコンバータの起動方法及び装置
US7262087B2 (en) * 2004-12-14 2007-08-28 International Business Machines Corporation Dual stressed SOI substrates
JP2006324426A (ja) * 2005-05-18 2006-11-30 Sony Corp 半導体装置およびその製造方法
JP2007005627A (ja) * 2005-06-24 2007-01-11 Sony Corp 半導体装置の製造方法
JP2007059473A (ja) * 2005-08-22 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR101670695B1 (ko) 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101622978B1 (ko) 2008-09-19 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101889287B1 (ko) 2008-09-19 2018-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
CN101714546B (zh) * 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
KR102133478B1 (ko) 2008-10-03 2020-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
US8530897B2 (en) * 2008-12-11 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device including an inverter circuit having a microcrystalline layer
JP5632654B2 (ja) * 2009-05-29 2014-11-26 株式会社半導体エネルギー研究所 表示装置
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8842229B2 (en) 2010-04-16 2014-09-23 Sharp Kabushiki Kaisha Thin film transistor substrate, method for producing same, and display device
JP6615490B2 (ja) * 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ
WO2019176040A1 (ja) * 2018-03-15 2019-09-19 シャープ株式会社 アクティブマトリクス基板および表示デバイス
WO2020208704A1 (ja) 2019-04-09 2020-10-15 シャープ株式会社 表示装置および製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052052A (ja) * 1983-08-31 1985-03-23 Fujitsu Ltd 相補型ｍｉｓ半導体装置
JPS63120467A (ja) * 1986-11-10 1988-05-24 Fujitsu Ltd 半導体装置の製造方法
JP3025385B2 (ja) * 1993-01-21 2000-03-27 シャープ株式会社 半導体装置
JP2001244468A (ja) * 2000-03-02 2001-09-07 Sony Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012156534A (ja) * 2012-03-28 2012-08-16 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器

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Publication number Publication date
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