JP4962630B2 - Organic EL device - Google Patents

Description

  The present invention relates to an organic EL device.

  Conventionally, an organic electroluminescence device (hereinafter referred to as “organic EL device”) having an organic light emitting layer is known. The organic EL device includes a plurality of light emitting elements formed of a material containing an organic material. This light-emitting element has a basic structure in which an organic light-emitting layer is sandwiched between an anode and a cathode (see, for example, Patent Document 1).

  In the element region in which a plurality of light emitting elements are formed, a partition that partitions the light emitting element is provided, and the outermost partition is provided as an “enclosing member” surrounding the element region. A cathode wiring connected to the cathode of the light emitting element is arranged in a non-display area around the element area called a “frame part”. The cathode wiring is formed for electrical conduction of the cathode to the connection terminal portion of the organic EL device. The cathode of the light emitting element is usually drawn from the inside of the element region over the surrounding member to the frame portion and connected to the cathode wiring.

JP 2007-234819 A

  However, in the conventional organic EL device, when the cathode wiring and the cathode of the light emitting element are connected, the cathode (electrode) of the light emitting element goes over the surrounding member and is connected to the electrode on the substrate. Depending on the angle between the outer surface and the surface of the substrate, defects such as electrode coverage defects and cracks occur near the portion where the outer surface of the surrounding member rises on the substrate, and the electrode and the conductive member are disconnected. There is a fear.

  Therefore, the present invention provides an organic EL device capable of preventing disconnection between an electrode and a conductive member when connecting an electrode of a light emitting element inside the enclosing member and a conductive member outside the enclosing member. It is.

In order to solve the above problems, an organic EL device of the present invention includes a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode on a substrate. Electrically connecting an element region provided with a light emitting element including a partition wall provided outside the element region, a conductive member provided outside the partition wall, the second electrode, and the conductive member. A connecting conductive member to be connected, wherein the partition has an outer portion formed of a side surface facing the outer peripheral side of the base, and the connecting conductive member is provided to cover the outer portion of the partition. And provided along the first side forming the outer periphery of the base and the second side opposite to the first side, and the conductive member for connection is not provided in the element region. The second electrode is not provided on the outer side of the partition wall. .
In order to solve the above problems, an organic EL device of the present invention is provided with a first electrode provided on a base, a functional layer provided above the first electrode, and a functional layer provided above the functional layer. Covering the outer peripheral side of the functional layer included in the light emitting element closest to the outer periphery of the substrate, in the element region, a plurality of light emitting elements including the second electrode; An enclosing member provided on the base; and a conductive member disposed outside the enclosing member. The enclosing member is connected to the conducting member and rides on the enclosing member from the outside of the enclosing member and The thickness of the connecting conductive member connected to the electrode is larger than the thickness of the second electrode.
In order to solve the above problems, an organic EL device of the present invention includes a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode on a substrate. Electrically connecting an element region provided with a light emitting element including a partition wall provided outside the element region, a conductive member provided outside the partition wall, the second electrode, and the conductive member. A connecting conductive member to be connected, wherein the partition has an outer portion formed of a side surface facing the outer peripheral side of the base, and the connecting conductive member is provided to cover the outer portion of the partition. And provided along the first side forming the outer periphery of the substrate and the second side facing the first side, and the second electrode is provided on the outer side of the partition wall. It is characterized by not.

  By comprising in this way, the connection electrically-conductive member thicker than a 2nd electrode is formed covering the part which the outer surface of the base | substrate outer peripheral side of a surrounding member stands | starts up on a board | substrate. Therefore, as compared with the conventional case where the second electrode is drawn from the inside of the surrounding member to the outside and connected to the conductive member on the substrate, the occurrence of defects near the rising portion of the outer surface of the surrounding member is reduced. Can be suppressed. Therefore, disconnection between the second electrode and the conductive member can be prevented.

  In the organic EL device of the present invention, the connecting conductive member has a thickness of 120 nm or more, and the second electrode has a thickness of 10 nm or less.

  By comprising in this way, generation | occurrence | production of the defect in the vicinity of the standup | rising part of the outer side surface of an enclosing member can be prevented more reliably, and the disconnection between a 2nd electrode and a electrically-conductive member can be prevented more reliably.

  In the organic EL device of the present invention, the thickness of the surrounding member is 1 μm or more.

  By comprising in this way, an element area | region and an area | region other than that can be divided reliably by a surrounding member. Further, by sufficiently insulating the second electrode, it is possible to form a drive circuit and wiring on the first electrode side under the enclosing member.

  In the organic EL device of the present invention, an angle formed between the outer surface of the surrounding member on the outer peripheral side of the base member and the base member surface is 20 degrees or more and 70 degrees or less.

  With this configuration, the angle of the outer surface of the surrounding member does not become too gentle, and the width of the peripheral portion of the surrounding member in the base surface direction does not become larger than necessary. Further, the angle of the outer surface of the surrounding member does not become too steep, and it is possible to prevent the connection conductive member from being defective (disconnected) near the portion where the outer surface of the surrounding member rises from the base surface.

  In the organic EL device of the present invention, the connecting conductive member is formed of a material having a smaller ionization tendency than the material of the second electrode.

  Compared to the case where the second electrode is directly connected to the conductive member, and a material having an ionization tendency equal to or larger than the ionization tendency of the second electrode is used as the material of the conductive member for connection. Thus, moisture penetration into the light emitting element can be prevented, and deterioration of the light emitting element can be prevented. Furthermore, since current concentrates on the conductive member, it is possible to prevent electromigration during high temperature operation.

  In the organic EL device of the present invention, the connecting conductive member is made of aluminum.

  By comprising in this way, the connection electrically-conductive member can be formed at low temperature compared with the case where it manufactures with metal materials, such as silver, and while being easy to manufacture, material cost can be reduced.

  In the organic EL device of the present invention, the second electrode is formed by laminating a metal thin film and a transparent conductive film.

  By comprising in this way, compared with the case where a 2nd electrode is formed only with a metal thin film, a metal thin film is formed thinner, and the increase in an electrical resistance is suppressed, ensuring the light transmittance of a 2nd electrode. Can do.

  The organic EL device of the present invention includes an electrode protective layer that covers the second electrode and the conductive member for connection, and an organic buffer that covers a surface that is formed on the electrode protective layer and forms the outer portion of the surrounding member. And a gas barrier layer covering the organic buffer layer and the electrode protective layer.

By comprising in this way, when forming an organic buffer layer, a 2nd electrode and the electrically conductive member for a connection can be protected by an electrode protective layer, and damage to a 2nd electrode and a conductive member for a connection can be prevented. . Thereby, it can also prevent that the functional layer of the lower layer side of a 2nd electrode is damaged. Further, it is possible to prevent the material of the organic buffer layer from affecting the second electrode and the connecting conductive member.
Further, the organic buffer layer can relieve unevenness on the substrate due to the partition wall, the conductive member, and the like that separate the surrounding member and the plurality of light emitting elements for each pixel. Thereby, the gas barrier layer is formed flat, and the function of preventing moisture from entering the apparatus by the gas barrier layer can be improved.

  In the organic EL device of the present invention, the contact angle at the end of the organic buffer layer is formed to be 20 degrees or less.

  With this configuration, the angle of the gas barrier layer formed so as to cover the organic buffer layer is not too steep at the peripheral edge of the organic buffer layer, and the gas barrier layer is damaged at the peripheral edge of the organic buffer layer. Can be suppressed.

In the organic EL device of the present invention, the partition includes the outer portion and the top, and the conductive member for connection and the second electrode are electrically connected at the top of the partition. It is characterized by being.
Further, the organic EL device of the present invention includes an enclosing member having the partition and a planarizing layer provided outside the partition, and the conductive member is provided outside the enclosing member. It is characterized by.
In the organic EL device of the present invention, the conductive member is continuously formed in a band shape so as to surround the enclosing member, and the connecting conductive member extends in a band shape along the extending direction of the enclosing member. It is provided.

  With this configuration, the connection area between the second electrode and the conductive member of the light emitting element and the conductive member for connection is enlarged to reduce the connection resistance, and the cross-sectional areas of the conductive member and the conductive member for connection are increased. Thus, the electrical resistance can be reduced.

It is a schematic diagram which shows the wiring structure of the organic electroluminescent apparatus which concerns on 1st embodiment of this invention. It is a schematic sectional drawing which shows the structure of the organic electroluminescent apparatus which concerns on 1st embodiment of this invention. It is an expanded sectional view of the A section shown in FIG. 1 is a schematic plan view showing a configuration of an organic EL device according to a first embodiment of the present invention. It is a schematic plan view which shows the structure of the organic electroluminescent apparatus which concerns on 2nd embodiment of this invention.

[First embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. In the following drawings, the scale is appropriately changed for each layer and each member so that each layer and each member can be recognized on the drawing.

  FIG. 1 is a schematic diagram showing a wiring structure of the organic EL device of this embodiment. The organic EL device 1 is of an active matrix type using thin film transistors (hereinafter referred to as TFTs) as switching elements, and has a plurality of scanning lines 101 and a direction that intersects each scanning line 101 at a right angle. A wiring configuration including a plurality of signal lines 102 extending and a plurality of power supply lines 103 extending in parallel to each signal line 102, and sub-pixels X are formed in the vicinity of each intersection of the scanning line 101 and the signal line 102 It is.

  A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.

  Further, each of the sub-pixels X includes a switching TFT (switching element) 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101, and a pixel shared from the signal line 102 via the switching TFT 112. A holding capacitor 113 for holding a signal, a driving TFT (switching element) 123 to which a pixel signal held by the holding capacitor 113 is supplied to the gate electrode, and the power supply line 103 through the driving TFT 123 are electrically connected. An anode 10 into which a drive current flows from the power supply line 103 when connected, and a light emitting layer (organic light emitting layer) 12 sandwiched between the anode 10 and the cathode 11 are provided.

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, current flows from the power supply line 103 to the anode 10 through the channel of the driving TFT 123, and further current flows to the cathode 11 through the light emitting layer 12. The light emitting layer 12 emits light according to the amount of current flowing through it.

  Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS. Here, FIG. 2 is a cross-sectional view schematically showing the organic EL device 1. FIG. 3 is a diagram showing the main part (A part) of FIG. 2, and is an enlarged cross-sectional view for explaining the configuration of the peripheral part of the organic EL device 1. FIG. 4 is a plan view schematically showing the configuration of the organic EL device 1.

  As shown in FIG. 2, the organic EL device 1 in the present embodiment is a so-called “top emission type” organic EL device. In the top emission method, light is extracted not from the element substrate side but from the counter substrate side, so that there is an effect that a large light emitting area can be secured without being affected by the size of various circuits arranged on the element substrate. Therefore, luminance can be secured while suppressing voltage and current, and the lifetime of the light-emitting element can be maintained long.

  The organic EL device 1 includes an element substrate 20A on which a plurality of light emitting elements 21 are disposed, and an electrode protective layer 17, an organic buffer layer 18, and a gas barrier layer 19 formed by laminating and covering the plurality of light emitting elements 21. And a protective substrate 31 disposed opposite to the surface of the element substrate 20A on which the plurality of light emitting elements 21 are disposed. The element substrate 20A and the protective substrate 31 include a seal layer 33 and an adhesive layer 34. And pasted through. In the following description, the vertical relationship and stacking relationship of each component are shown with the side on which the element substrate 20A is disposed as the lower side and the side on which the protective substrate 31 is disposed as the upper side.

  The element substrate 20 </ b> A includes a substrate body (base body) 20, the above-described various wirings and TFT elements formed on the substrate body 20, and the inorganic insulating film 14 that covers these wirings and TFT elements. As the substrate body 20, either a transparent substrate or an opaque substrate can be used. Examples of opaque substrates include ceramics such as alumina, metal sheets such as stainless steel that have been subjected to insulation treatment such as surface oxidation, thermosetting resins and thermoplastic resins, and films thereof (plastic films). It is done. As the transparent substrate, for example, an inorganic substance such as glass, quartz glass, or silicon nitride, or an organic polymer (resin) such as an acrylic resin or a polycarbonate resin can be used. In addition, a composite material formed by laminating or mixing the above materials can also be used as long as it has optical transparency. In the present embodiment, glass is used as the material of the substrate body 20.

On the substrate body 20, the above-described driving TFT 123 and various wirings (not shown) are formed, and the inorganic insulating film 14 is formed on the entire surface of the substrate body 20 so as to cover them. The inorganic insulating film 14 is made of, for example, silicon oxide such as SiO ₂ or silicon nitride.

  On the element substrate 20A, a planarizing layer 16 for relaxing the surface irregularities derived from the wiring and TFT elements provided in the element substrate 20A, a light emitting element 21 arranged and disposed in the planarizing layer 16, A metal reflection layer 15 that reflects light emitted from the light emitting element 21 toward the protective substrate 31 is formed. The planarizing layer 16 is formed of an insulating resin material, and a photolithography method is used for the formation method. Therefore, for example, a photosensitive acrylic resin or a cyclic olefin resin is used as the material.

  Since the metal reflection layer 15 serves both as a wiring and a manufacturing process, the metal reflection layer 15 is formed of the same metal as the wiring material, such as aluminum, titanium, molybdenum, silver, copper, or an alloy material combining them, and has a property of reflecting light. I have. In this embodiment, it is made of aluminum. The metal reflection layer 15 is disposed so as to overlap the light emitting element 21 in a plane between a light emitting element 21 described later and the substrate body 20.

  A light emitting element 21 is disposed on the planarizing layer 16 and in a region overlapping the metal reflective layer 15 in a plane, between the adjacent light emitting elements 21 and on the outer peripheral side of the light emitting element 21 and the substrate body 20. A partition wall 13 is formed between the end portions. The partition wall 13 is formed of an insulating resin material similarly to the planarization layer 16, and a photolithography method is used for the formation method. For example, a photosensitive acrylic resin or a cyclic olefin resin is used as the material.

  The light emitting element 21 is formed by sandwiching a light emitting layer 12 constituting a functional layer between an anode (first electrode) 10 and a cathode (second electrode) 11. The anode 10 of the light emitting element 21 is formed on the planarizing layer 16 and connected to the driving TFT 123 provided in the element substrate 20A. The anode 10 is preferably made of a material having a work function of 5 eV or more and a high hole injection effect. Examples of such a material having a high hole injection effect include metal oxides such as ITO (Indium Thin Oxide). In this embodiment, ITO is used.

  The light emitting layer 12 employs a white light emitting layer that emits white light. In this embodiment, the white light emitting layer is formed using a low molecular weight light emitting material by a vacuum deposition method. As a white light emitting material, white light is emitted by simultaneously emitting a layer obtained by doping an anthracene-based dopant (blue) and a layer doped with a rubrene-based dopant (yellow) in a stricylamine-based light-emitting layer. The light emitting material which implement | achieves can be mentioned.

  Although illustration is omitted, in the present embodiment, a triarylamine multimer (ATP) layer (hole injection layer), a triphenyldiamine derivative (TPD) layer (between the anode 10 and the light emitting layer 12 ( A hole transport layer), an aluminum quinolinol (Alq3) layer (electron injection layer) and a LiF (electron injection buffer layer) are formed between the light emitting layer 12 and the cathode 11, respectively. The structure facilitates injection. In this embodiment, the hole injection layer, the hole transport layer, the light emitting layer 12, the electron injection layer, and the electron injection buffer layer constitute a functional layer.

  The cathode 11 covers the surfaces of the light emitting element 21 and the partition wall 13 and extends to reach the top of the partition wall 13 disposed on the outermost periphery (the side closer to the outer periphery of the element substrate 20A). As the cathode 11, a thin film made of a material having a large electron injection effect (a work function of 4 eV or less) is preferably used. For example, metal thin films such as calcium, magnesium, sodium, and lithium metal, or thin films of these metal compounds or laminates. Examples of the metal compound include metal fluorides such as calcium fluoride, metal oxides such as lithium oxide, and organometallic complexes such as acetylacetonato calcium. The cathode 11 is formed using a high-density plasma film forming method such as a vacuum deposition method in the case of a metal material, and an ECR plasma sputtering method, an ion plating method, or an opposed target sputtering method in the case of a metal compound. The total film thickness of these cathodes is preferably 100 nm or less, more preferably 20 nm or less in order to obtain transparency.

  In addition, when used in a large panel of 20 inches or more, since the electrical resistance is large and the performance as an electrode is lowered only with a thin film formed of these materials, ITO, tin oxide, etc. are in contact with the metal thin film described above. A transparent conductive film formed of a transparent metal oxide is laminated in a range of 100 nm or less, or a metal layer such as aluminum, gold, silver, or copper is patterned so as to avoid a light emitting portion separately from the cathode. An auxiliary wiring may be provided. In this embodiment, a magnesium-silver alloy (MgAg) is formed with a film thickness of about 10 nm.

  In the present embodiment, as shown in FIG. 3, the surrounding member W that surrounds the display region 3 (see FIG. 4) of the organic EL device 1 is formed by the partition wall 13 and the planarization layer 16 arranged on the outermost periphery of the element substrate 20 </ b> A. Is functioning as A region surrounded by the surrounding member W is an element region 5 in which a plurality of light emitting elements 21 are formed. A first cathode wiring (conductive member) 22A is formed on the element substrate 20A in a region where the planarizing layer 16 is not formed near the outer periphery of the element substrate 20A outside the enclosing member W. . The first cathode wiring 22A and the cathode 11 are connected by a cathode connection layer (connection conductive member) 24 and are conductive.

  The first cathode wiring 22A is formed for the purpose of energizing the cathode 11 to a power source (not shown), and is mainly provided near the outer periphery of the element substrate 20A. As the material for forming the first cathode wiring 22A, metals having high electrical conductivity, such as aluminum, titanium, molybdenum, tantalum, silver, copper, or alloys thereof are used, and these materials are laminated in a single layer or multiple layers. What was formed is used. Moreover, ITO which is the same material as the anode 10 is formed on the outermost layer of the first cathode wiring 22A. Simultaneously with the formation of the anode 10, by forming ITO on the outermost layer of the first cathode wiring 22A, corrosion of the first cathode wiring 22A in the photolithography process in the manufacturing process can be prevented. The thickness of the first cathode wiring 22A is about 300 nm to 800 nm, and the width is about 0.5 mm to 5 mm. However, since the width of the first cathode wiring 22A that can be formed differs depending on the size of the organic EL device 1, the width of the first cathode wiring 22A is not limited to this value. In the present embodiment, for example, the first cathode wiring 22A having a width of about 1 mm is formed.

  The material for forming the cathode connection layer 24 is made of a metal having high electrical conductivity, and is formed by a vacuum vapor deposition method or a sputtering method through a mask. The cathode connection layer 24 is desirably formed of a material having a smaller ionization tendency than the material of the cathode 11. For example, when magnesium is used for the cathode 11, aluminum can be used.

As shown in FIG. 3, the surrounding member W is formed such that the outer surface on the outer peripheral side of the substrate body 20 is stepped by the outer surface 16 a and the upper surface 16 b of the planarization layer 16 and the outer surface 13 a of the partition wall 13. Yes.
An angle θ1 formed between the outer surface 16a of the planarizing layer 16 constituting the enclosing member W and the surface 20a of the substrate body 20 is an angle of 20 degrees or more and 70 degrees or less. Further, the upper surface 16 b of the planarizing layer 16 constituting the enclosing member W is substantially parallel to the surface 20 a of the substrate body 20. The angle θ2 formed between the outer surface 13a of the partition wall 13 constituting the enclosing member W and the surface 20a of the substrate body 20 is an angle of 20 degrees to 70 degrees.
Further, the thickness Tw of the surrounding member W is, for example, about 1 μm or more.

  The cathode connection layer 24 is connected to the first cathode wiring 22A on the outside of the surrounding member W (on the outer peripheral side of the substrate body 20), and runs on the surrounding member W from the outside of the surrounding member W to form the partition wall constituting the surrounding member W 13 is connected to the cathode 11 at the top of the head. The cathode connection layer 24 is formed so that the thickness T is larger than the thickness t of the cathode 11. The cathode connection layer 24 has a thickness T of, for example, about 120 nm or more. In the present embodiment, the thickness T of the cathode connection layer 24 is about 300 nm.

  On the element substrate 20A, an electrode protection layer 17 is formed on the entire surface of the element substrate 20A so as to cover the end face of the first cathode wiring 22A and the surfaces of the first cathode wiring 22A, the cathode connection layer 24, and the cathode 11. The electrode protective layer 17 can suppress damage to the cathode 11 and the light emitting layer 12 therebelow, which are very thin as 20 nm or less. Further, it also has a function as a gas barrier layer that prevents moisture from entering the light emitting element 21.

  The electrode protective layer 17 can be formed using a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. Before the formation, it is preferable to improve the adhesion of the film formed by oxygen plasma treatment.

  The electrode protective layer 17 is preferably composed of a silicon compound such as silicon oxynitride or silicon nitride in consideration of transparency, adhesion, water resistance, insulation, and gas barrier properties. Among these, silicon oxynitride is preferable because it can be a colorless and transparent film while suppressing film stress while maintaining high moisture resistance by changing the ratio of oxygen and nitrogen contained. In this embodiment, the electrode protective layer 17 is formed using silicon oxynitride.

  The film thickness of the electrode protective layer 17 is preferably 100 nm or more in order to prevent the material of the organic buffer layer 18 before curing from penetrating into the cathode 11, and cracks are generated due to stress generated by covering the partition wall 13. Therefore, the upper limit of the film thickness is preferably set to 300 nm or less.

An organic buffer layer 18 is formed on the electrode protective layer 17 on the inner side (device center side) of the electrode protective layer 17. The organic buffer layer 18 is disposed so as to fill the uneven portion of the electrode protection layer 17 formed in an uneven shape due to the influence of the shape of the surrounding member W and the partition wall 13, and the upper surface thereof is formed substantially flat.
The organic buffer layer 18 is formed so as to relieve the uneven shape mainly derived from the surrounding member W in the peripheral portion. In the periphery of the organic buffer layer 18, the organic buffer layer 18 is formed along the shape of the stepped outer surface of the surrounding member W. Further, the organic buffer layer 18 is formed so as to become thinner from the central portion of the device to the peripheral end portion 35. Further, the organic buffer layer 18 is formed in a peripheral portion of the organic buffer layer 18 along a stepped base shape, and the substrate body on the surface slope of the organic buffer layer 18 from the peripheral end portion 35 to the upper portion of the surrounding member W. The elevation angle with respect to the direction of the surface 20a of 20 is formed without increasing rapidly.

  Here, as shown in FIG. 3, the elevation angle (contact angle) θ with respect to the direction of the surface 20 a of the substrate body 20 at the peripheral end portion 35 of the organic buffer layer 18 is preferably 20 degrees or less. In this embodiment, the elevation angle θ is about 10 degrees, for example.

  The organic buffer layer 18 is preferably formed of an organic compound material that is excellent in fluidity and has no solvent or volatile component, and is a raw material for the polymer skeleton, and has an epoxy group as such a forming material. Epoxy monomers / oligomers having a molecular weight of 3000 or less can be suitably used. Here, a raw material having a molecular weight of 1000 or less is a monomer, and a raw material having a molecular weight of 1000 to 3000 is an oligomer. For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these may be used alone or in combination.

  Further, the forming material of the organic buffer layer 18 includes a curing agent that reacts with the epoxy monomer / oligomer. As such a curing agent, an agent that forms a cured film having excellent electrical insulation and adhesiveness, high hardness, toughness and excellent heat resistance is suitably used, and it has excellent transparency and little variation in curing. The polymerization type is preferred. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene Acid anhydride curing agents such as tetracarboxylic dianhydride and 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride are preferred. The material for forming the organic buffer layer 18 to which these curing agents are added behaves as an excellent thermosetting resin.

  Furthermore, low-temperature curing is facilitated by adding trace amounts of amine compounds such as alcohols and aminophenols that have a high molecular weight and are difficult to volatilize such as 1,6-hexanediol as reaction accelerators that promote the reaction (ring opening) of acid anhydrides. Become. These curing is performed by heating in the range of 60 to 100 ° C., and the cured film becomes a polymer having an ester bond.

  In addition, a cation-releasing photopolymerization initiator often used to shorten the curing time may be used, but it is preferable that the reaction is slow so that the curing shrinkage does not rapidly progress, and the viscosity decreases due to heating after coating. It is preferable to finally form a cured product using thermosetting so as to promote flattening. Furthermore, additives such as a silane coupling agent that improves the adhesion to the cathode 11 and the gas barrier layer 19, a water capturing agent such as an isocyanate compound, and fine particles that prevent shrinkage during curing may be mixed therein.

  The viscosity of each raw material is preferably 1000 mPa · s (room temperature: 25 ° C.) or more. This is because it does not penetrate into the light emitting layer 12 immediately after the application and does not generate a non-light emitting region called a dark spot. Moreover, as a viscosity of the buffer layer forming material which mixed these raw materials, 2000 mPa * s (room temperature) or more is preferable. Moreover, it is preferable that the water content is a material adjusted to 10 ppm or less.

  Moreover, as an optimal film thickness of the organic buffer layer 18, 2-5 micrometers is preferable. When the organic buffer layer 18 is thicker, it is easier to prevent the gas barrier layer 19 from being damaged when foreign matter is mixed in. However, if the combined thickness of the organic buffer layer 18 exceeds 15 μm, a colored layer 32a and a light emitting layer 12 described later are formed. This is because the efficiency of extracting light decreases because the distance of the light increases and the amount of light escaping to the side increases.

  A gas barrier layer 19 is formed on the organic buffer layer 18 so as to cover the entire surface including the end portion of the organic buffer layer 18 and to cover the entire surface of the electrode protection layer 17. The gas barrier layer 19 is for preventing oxygen and moisture from entering, and considering transparency, gas barrier properties, and water resistance, a silicon compound containing nitrogen, that is, silicon nitride, silicon oxynitride, or the like is preferably used. Formed using. In this embodiment, the gas barrier layer 19 is formed using silicon oxynitride.

The gas barrier layer 19 can be formed using a high-density plasma film forming method such as an ECR sputtering method or an ion plating method. Before the formation, it is preferable to improve the adhesion of a film formed by performing oxygen plasma treatment on the formation surface. The film thickness of the gas barrier layer 19 is preferably 100 nm or more in order to prevent the gas barrier layer 19 from being damaged and to ensure gas barrier properties. Further, it is preferably 800 nm or less in order to prevent cracks when covering the end portions of the organic buffer layer 18 and the uneven portions such as the first cathode wiring 22A.
The electrode protective layer 17 and the gas barrier layer 19 are formed so as to cover the first cathode wiring 22A. As described above, ITO (oxide conductive film) used for the anode 10 is formed on the surface of the first cathode wiring 22A.

  The gas barrier layer 19 is formed wider than the organic buffer layer 18 so as to completely cover the organic buffer layer 18, and the seal layer 33 is disposed on the gas barrier layer 19. Further, as shown in FIG. 3, the rising portion 36 of the peripheral end portion 35 of the organic buffer layer 18 is positioned within the width d of the seal layer 33.

The organic buffer layer 18 and the gas barrier layer 19 formed thereon are formed using different materials, and are formed of materials having different thermal expansion coefficients. The seal layer 33 is formed so as to overlap the peripheral end portion 35 of the organic buffer layer 18, and the gas barrier layer 19 is sandwiched between organic materials.
The electrode protective layer 17 is formed wider than the organic buffer layer 18 and is usually formed with the same width as the gas barrier layer 19 because it is formed using the same mask as the gas barrier layer 19.

  A protective substrate 31 is disposed opposite to the element substrate 20A on which the gas barrier layer 19 is formed. The protective substrate 31 is a substrate having a function of protecting the gas barrier layer 19 and light transmittance. For example, inorganic materials such as glass, quartz glass, and silicon nitride, acrylic resin, polycarbonate resin, polyethylene terephthalate resin, polyolefin resin, and the like are used. It can be formed using an organic polymer (resin). In addition, a composite material formed by laminating or mixing the above materials can be used as long as it has optical transparency. Among them, a glass substrate is particularly preferably used because it has high transparency and moisture resistance, and matches the coefficient of thermal expansion with the element substrate to impart heat resistance.

  A color filter layer 32 is formed on the surface of the protective substrate 31 facing the element substrate 20A. In the color filter layer 32, a colored layer 32a that modulates transmitted light into any one of red (R), green (G), and blue (B) is arranged in a matrix. Each of the colored layers 32 a is disposed to face the white light emitting layer 12 formed on the anode 10. As a result, the light emitted from the light emitting layer 12 passes through each of the colored layers 32a and is emitted to the viewer as red light, green light, and blue light to perform color display.

  Further, a black matrix layer 32b that prevents light leakage and improves visibility is formed between adjacent colored layers 32a and around the colored layer 32a. The black matrix layer 32b is formed so as to partially extend to a region that overlaps the seal layer 33 in a plan view, thereby efficiently preventing light leakage from the side surface of the apparatus and improving the image quality.

  The element substrate 20A and the protective substrate 31 include a seal layer 33 disposed in the vicinity of the outer peripheral portion of the element substrate 20A, and an adhesive layer sandwiched between the element substrate 20A and the protective substrate 31 in a region surrounded by the seal layer 33. 34.

  In addition to the function of preventing moisture from entering the inside of the device, the sealing layer 33 has a function as a bank that improves the positional accuracy of the bonding between the element substrate 20A and the protective substrate 31 and prevents the adhesive layer 34 from protruding. Yes. The forming material of the sealing layer 33 is made of a resin material that is cured by ultraviolet rays and has an improved viscosity. Preferably, an epoxy monomer / oligomer having an epoxy group and having a molecular weight of 3000 or less is used. For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these may be used alone or in combination.

  Further, the forming material of the seal layer 33 includes a curing agent that reacts with the epoxy monomer / oligomer. As the curing agent, a photoreactive initiator that causes a cationic polymerization reaction such as diazonium salt, diphenyliodonium salt, triphenylsulfonium salt, sulfonic acid ester, iron arene complex, silanol / aluminum complex is preferably used. The material for forming the seal layer 33 to which these curing agents are added behaves as a light (ultraviolet) curable resin.

  The viscosity at the time of applying the forming material of the seal layer 33 is preferably 30 to 100 Pa · s (room temperature). In addition, when an additive called a cation hold agent is used so that the viscosity gradually increases after ultraviolet irradiation, the light irradiation step after bonding can be eliminated, and the forming material of the seal layer 33 hardly flows. Therefore, the bonding process is facilitated. Further, even a narrow seal width of 1 mm or less is preferable because the seal layer 33 can be prevented from being ruptured and the filler after sticking can be prevented from sticking out. Moreover, it is preferable that the water content is a material adjusted to 1000 ppm or less.

  Usually, the material for forming the seal layer 33 is a spherical particle (spacer) having a predetermined particle diameter for controlling the distance between the substrates, or a scaly or massive inorganic material (inorganic filler) for adjusting the viscosity. Etc.) are often mixed. However, since these fillers may damage the gas barrier layer 19 at the time of bonding and pressure bonding, in this embodiment, a seal layer forming material in which these fillers are not mixed is used. The thickness of the sealing layer 33 is preferably 10 to 20 μm.

  The adhesive layer 34 is filled in the organic EL device 1 surrounded by the seal layer 33 without any gap, and fixes the protective substrate 31 disposed opposite to the element substrate 20A, and against mechanical shock from the outside. And has a function of protecting the light emitting layer 12 and the gas barrier layer 19.

  The main component of the material for forming the adhesive layer 34 should be an organic compound material that is excellent in fluidity and does not have a volatile component such as a solvent, and preferably an epoxy monomer / oligomer having an epoxy group and a molecular weight of 3000 or less. Is used. For example, bisphenol A type epoxy oligomer, bisphenol F type epoxy oligomer, phenol novolac type epoxy oligomer, polyethylene glycol diglycidyl ether, alkyl glycidyl ether, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, There are ε-caprolactone-modified 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexanecarbochelate, and these may be used alone or in combination.

  Further, the forming material of the adhesive layer 34 includes a curing agent that reacts with the epoxy monomer / oligomer. As this curing agent, those which form a cured film having excellent electrical insulation, toughness and excellent heat resistance are preferably used, and an addition polymerization type having excellent transparency and little variation in curing is preferable. For example, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, 1,2,4,5-benzene An acid anhydride curing agent such as tetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, or a polymer thereof is preferable. The material for forming the adhesive layer 34 to which these curing agents are added behaves as a thermosetting resin.

  The forming material of the adhesive layer 34 is cured by heating in the range of 60 to 100 ° C., and the cured film becomes a polymer having an ester bond that has excellent adhesion to silicon oxynitride. Further, amine curing agents such as aromatic amines and aliphatic amines may be used. As the material for forming the adhesive layer 34, a material in which a filler such as a spacer or an inorganic filler is not mixed is used for the same reason as the material for forming the seal layer.

  The viscosity at the time of application of the forming material of the adhesive layer 34 is preferably 200 to 1000 mPa · s (room temperature). The reason is that the material filling property into the space after the bonding is taken into consideration, and a material in which the curing starts after the viscosity once decreases immediately after heating is preferable. Moreover, it is preferable that the water content is a material adjusted to 1000 ppm or less.

  The film thickness of the adhesive layer 34 is preferably 3 to 10 μm. When the adhesive layer 34 has such a thickness, the total of the thickness of the adhesive layer 34 and the thickness of each protective layer such as the organic buffer layer 18 described above is about 15 μm at the maximum. If the total film thickness exceeds 15 μm, the distance between the color filter layer 32 and the light emitting element 21 becomes too wide, and the proportion of the light that escapes from the light emitting element 21 to the side of the device increases. This is because the efficiency becomes worse. This film thickness is controlled by controlling the amount of the material for forming the adhesive layer 34 disposed.

  Further, the peripheral portion of the organic EL device 1 is a frame portion which is a non-light emitting portion. The frame portion is disposed, for example, between the top of the partition wall 13 provided at the outermost end on the element substrate 20A and the end of the element substrate 20A. As shown in FIG. 3, the width D of the frame portion is 2 mm, for example, and the width d of the seal layer 33 is 1 mm, for example.

  Next, the planar structure of the organic EL device 1 will be described with reference to the schematic plan view of FIG. The element substrate 20 </ b> A has a rectangular shape in plan view, and includes a display region 3 disposed in the center of the substrate body 20 and a frame portion 4 disposed around the display region 3.

  The display area 3 has a rectangular area shape in plan view, and the sub-pixels X shown in FIG. 1 are arranged in a matrix. A light emitting element 21 is disposed in each of the sub-pixels X, so that any one of red (R), green (G), and blue (B) light is extracted. The sub-pixels X that develop colors in these colors are arranged in the same color in the lateral direction in the drawing to form a so-called stripe arrangement. Then, R, G, and B that are colored by the sub-pixel X are combined into one unit pixel, and the unit pixel is configured to perform full-color display by mixing RGB light emission. The size of the display area 3 is about 4 inches diagonally.

  The frame portion 4 covers the display region 3 and is formed in a rectangular area 11 in plan view that is formed in a larger area than the display region 3 (until it protrudes into the frame portion 4), and a first electrode 11 that surrounds the periphery of the cathode 11. A first cathode wiring 22A, a second cathode wiring 22B formed by connecting to the first cathode wiring 22A, and a strip-shaped cathode disposed on both short sides of the cathode 11 and connecting the cathode 11 and the first cathode wiring 22A And a connection layer 24. Further, one side 25 of the long sides of the element substrate 20A is provided with a mounting terminal 40 used for electrically connecting the element substrate 20A to another member at the center thereof.

A surrounding member W is provided around the display region 3 so as to surround the display region, and a region inside the surrounding member W is an element region 5 in which a plurality of light emitting elements 21 are formed. The cathode connection layer 24 extends in a strip shape on both short sides of the cathode 11 along the extending direction of the surrounding member W.
The first cathode wiring 22A is disposed in a U shape in plan view so as to face both short sides of the cathode 11 and the long side of the cathode 11 opposite to the side 25 side. The second cathode wiring 22B is formed in an L shape in plan view, and one end of the second cathode wiring 22B is connected to each end of the first cathode wiring 22A. Further, a connection terminal portion 23 is provided at the other end portion of each second cathode wiring 22 </ b> B, and the connection terminal portion 23 is provided so as to constitute a part of the mounting terminal 40 and reach the side 25.

  The mounting terminal 40 is connected to various wirings provided in the organic EL device 1 by circuit wiring (not shown). The mounting terminal 40 is used when the organic EL device 1 is electrically connected to another member. The mounting terminal 40 may be plated with a highly conductive metal such as gold or silver as necessary to increase the conductivity at the mounting terminal 40.

  The gas barrier layer 19 is formed except for the end portion of the mounting terminal 40 among these various wirings. The portion not exposed to the gas barrier layer 19 (exposed portion) also includes a connection terminal portion 23 that constitutes a part of the mounting terminal 40. The bent portion of the second cathode wiring 22B is covered with the gas barrier layer 19.

Next, the operation of the organic EL device 1 of the present embodiment will be described.
As shown in FIG. 3, the outer surface of the surrounding member W is formed in a staircase shape so as to rise from the element substrate 20 </ b> A by the outer surface 16 a and the upper surface 16 b of the planarization layer 16 and the outer surface 13 a of the partition wall 13. . Therefore, when the wiring or the like is formed so as to run on the surrounding member W, in the vicinity of the boundary between the first cathode wiring 22A on the element substrate 20A and the outer surface 16a of the planarization layer 16, coverage is insufficient, cracks, etc. Disconnection due to the occurrence of defects is likely to occur.

  However, in the organic EL device 1 of the present embodiment, the thickness T of the cathode connection layer 24 is formed larger than the thickness t of the cathode 11 as described above. Therefore, as compared with the case where the cathode 11 is pulled out to the outside of the surrounding member W and directly connected to the first cathode wiring 22A, the coverage in the vicinity of the boundary between the first cathode wiring 22A and the outer surface 16a of the planarization layer 16 is increased. Defects such as shortages and cracks are less likely to occur. Similarly, the occurrence of defects near the boundary between the outer surface 16a and the upper surface 16b of the planarization layer 16 and near the boundary between the upper surface 16b of the planarization layer 16 and the outer surface 13a of the partition wall 13 is also prevented. Therefore, according to the present embodiment, it is possible to make it difficult for defects to occur in the cathode connection layer 24 and to prevent disconnection between the cathode 11 and the first cathode wiring 22A.

  The thickness t of the cathode 11 is about 10 nm which is 20 nm or less, whereas the thickness T of the cathode connection layer 24 is about 300 nm which is 120 nm or more. In this way, by setting the thickness T of the cathode connection layer 24 to a value much larger than that of the cathode 11, the occurrence of defects can be prevented more reliably, and disconnection between the cathode 11 and the first cathode wiring 22A can be prevented. , Can be more reliably prevented.

  Further, the angle θ1 between the outer surface 16a of the planarizing layer 16 forming the outer surface of the surrounding member W and the surface 20a of the substrate body 20, and the outer surface 13a of the partition wall 13 with the surface 20a of the substrate body 20 are defined. The angle θ2 formed is between 20 degrees and 70 degrees. Thus, by setting the angles θ1 and θ2 to 20 degrees or more, the width of the peripheral portion of the surrounding member W in the direction of the surface 20a of the substrate body 20 is not increased more than necessary. In addition, by setting the angles θ1 and θ2 to 70 degrees or less, the outer surface 16a of the planarization layer 16 and the outer surface 13a of the partition wall 13 forming the outer surface of the surrounding member W may rise at a steeper angle than necessary. Therefore, it is possible to prevent the cathode connection layer 24 from being defective.

  In addition, when the thickness Tw of the surrounding member W is 1 μm or more, the element region 5 and the other regions can be reliably partitioned by the surrounding member W. On the other hand, disconnection due to the above-described defects is likely to occur. However, by configuring the cathode connection layer 24 as described above, defects can be prevented and disconnection can be prevented.

  When the cathode connection layer 24 is formed of a material having a smaller ionization tendency than the material of the cathode 11, the cathode 11 is directly connected to the first cathode wiring 22 </ b> A, or the material of the cathode connection layer 24 is used. As compared with the case where a material having an ionization tendency equal to or larger than the ionization tendency of the cathode 11 is used, the material between the first cathode wiring 22A and the cathode 11 is hardly corroded. Therefore, it is possible to prevent moisture from entering the light emitting element 21 due to corrosion of the material between the first cathode wiring 22A and the cathode 11, and to prevent deterioration of the light emitting element 21.

  In addition, by forming the cathode connection layer 24 from aluminum, the cathode connection layer 24 can be formed at a lower temperature as compared with the case where the cathode connection layer 24 is manufactured from a metal material such as silver. Can be reduced.

  Further, when the cathode 11 has a configuration in which a metal thin film and a transparent conductive film are laminated, the metal thin film is formed thinner than the case where the cathode 11 is formed of only the metal thin film, and the light transmission of the cathode 11 is achieved. The increase in electrical resistance can be suppressed while securing the properties.

  Further, by forming the electrode protection layer 17 that covers the cathode 11 and the cathode connection layer 24, the cathode 11 and the cathode connection layer 24 are protected by the electrode protection layer 17 when the organic buffer layer 18 is formed. In addition, damage to the cathode connection layer 24 can be prevented. Thereby, it is possible to prevent the functional layer on the lower layer side of the cathode 11 from being damaged. Further, it is possible to prevent the material of the organic buffer layer 18 before curing from penetrating into the cathode 11 and the cathode connection layer 24.

  An electrode protective layer 17 and a gas barrier layer 19 are formed so as to cover the first cathode wiring 22A, and ITO (oxide conductive film) is formed on the surface of the first cathode wiring 22A. Since this ITO takes a polycrystalline columnar structure in the process of film formation, there are many gaps, and moisture easily enters. Further, when heat treatment is performed in order to increase the conductivity of ITO, crystals (grains) aggregate and grow, so that there are more gaps. Therefore, if the first cathode wiring 22A is exposed, there is a risk that moisture such as water vapor in the external environment may enter the inside of the organic EL device 1 through ITO on the surface of the first cathode wiring 22A. However, in this embodiment, since the first cathode wiring 22A is covered with a layer made of a silicon compound having low moisture permeability, moisture intrusion from the first cathode wiring 22A is prevented and display performance is deteriorated due to deterioration of the light emitting element 21. Can be avoided and display performance can be maintained.

  In addition, the organic buffer layer 18 can relieve stress generated by warpage and volume expansion of the element substrate 20 </ b> A, and can prevent the electrode protective layer 17 from peeling from the partition wall 13. Further, the organic buffer layer 18 can relieve unevenness on the element substrate 20A. Thereby, the gas barrier layer 19 is formed flat, there is no portion where stress is concentrated, and generation of cracks in the gas barrier layer 19 can be prevented. Therefore, it is possible to improve the function of preventing moisture from entering the apparatus by the gas barrier layer 19.

  In addition, the elevation angle θ with respect to the horizontal direction of the element substrate 20A at the peripheral end portion 35 of the organic buffer layer 18 is formed to be 20 degrees or less, and in this embodiment, the elevation angle θ is 10 degrees. This prevents the gas barrier layer 19 formed so as to cover the organic buffer layer 18 at the peripheral end portion 35 of the organic buffer layer 18 from having a steep angle corresponding to the base shape. Accordingly, it is possible to prevent damage such as cracks and peeling due to stress concentration of the gas barrier layer 19 covering the peripheral end portion 35 of the organic buffer layer 18.

  Further, the gas barrier layer 19 can suppress deterioration of the light emitting element 21 due to oxygen or moisture. Furthermore, since the gas barrier layer 19 completely covers the organic buffer layer 18, it is possible to prevent moisture from entering through the organic buffer layer 18.

  Moreover, since the organic buffer layer 18 and the gas barrier layer 19 formed thereon are formed of materials having different thermal expansion coefficients, if the temperature of these layers changes due to environmental changes or heat generated by driving the device. The gas barrier layer 19 may be damaged due to the difference in thermal expansion coefficient. Such damage is likely to occur at the end of the organic buffer layer 18 where the shape of the gas barrier layer 19 changes. However, in the present embodiment, the seal layer 33 is formed so as to overlap the peripheral end portion 35 of the organic buffer layer 18, and the gas barrier layer 19 is sandwiched between organic materials. Thereby, damages such as cracks and peeling of the gas barrier layer 19 due to stress concentration can be prevented. Therefore, it is possible to prevent moisture from reaching the light emitting element 21 via the first cathode wiring 22A and the organic buffer layer 18 and to prevent the occurrence of dark spots.

  In the present embodiment, the protective substrate 31 is provided to face the gas barrier layer 19. Therefore, it is possible to prevent the gas barrier layer 19 from being damaged by the protective substrate 31 and to maintain the function of preventing the moisture from entering the apparatus by the gas barrier layer 19. In addition, moisture can be prevented from entering by the protective substrate 31 itself.

  In the present embodiment, the material for forming the seal layer 33 and the adhesive layer 34 does not include particulate fillers such as spacers and inorganic fillers. Therefore, when the element substrate 20A and the protective substrate 31 are pressure-bonded, it is possible to prevent the gas barrier layer 19 from being damaged due to the pressure stress applied to the gas barrier layer 19 via the filler.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. This embodiment is different from the organic EL device 1 described in the first embodiment in that the cathode connection layer 24B is continuously formed along the three sides of the surrounding member W. Since the other points are the same as in the first embodiment, the same parts are denoted by the same reference numerals and description thereof is omitted.

As shown in FIG. 5, in the organic EL device 1 </ b> B of the present embodiment, the cathode connection layer 24 extends in a strip shape along the three sides of the surrounding member W.
As a result, the connection area between the cathode 11 and the first cathode wiring 22A of the light emitting element 21 and the cathode connection layer 24 is expanded to reduce the connection resistance, and the cross-sectional area of the cathode connection layer 24 is increased to increase the electrical resistance. Can be reduced.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, according to the technical idea of the present invention, an active matrix using TFT or the like is not essential, and the present invention is implemented using an element substrate for a simple matrix, and the same effect can be achieved at a low cost even if a simple matrix is driven. It is obtained by.

Further, RGB light emission efficiency may be increased by controlling the distance between the metal reflection layer and the light emitting layer for each RGB pixel.
In addition, since the organic EL device of the above-described embodiment is a top emission type light emitting method, the anode does not necessarily have light transmittance, and a metal electrode such as aluminum that does not transmit light may be provided. In that case, since the anode reflects light and also has the function of the metal reflection layer described above, the metal reflection layer may not be provided.

In the above-described embodiment, a low-molecular light-emitting material is used, but a light-emitting layer may be formed using a high-molecular light-emitting material. It is also possible to change the configuration of each layer to have a three-layer structure in which white light is extracted by simultaneously emitting three colors of red, green, and blue.
In the above-described embodiment, the electrode protective layer is formed as a single layer, but may be stacked as a plurality of layers. For example, the electrode protective layer may be composed of a low elastic modulus lower layer and a high water resistance upper layer.

In addition, the gas barrier layer in the above-described embodiment is formed wider than the outer periphery of the seal layer. However, the gas barrier layer does not necessarily need to be formed wider than the seal layer, and is within the width of the seal layer like the peripheral edge of the organic buffer layer. It may be formed.
In the above-described embodiment, the gas barrier layer is formed as a single layer, but may be stacked as a plurality of layers.
In addition to the color filter layer, the protective substrate may be provided with a functional layer such as a layer that blocks or absorbs ultraviolet rays, an antireflection film, or a heat dissipation layer.

  In the above-described embodiment, the sealing layer forming material does not include particulate filler. However, in the case of a structure that does not contact the organic buffer layer, the gas barrier layer is not damaged. Further, spherical particles of an organic material having a small elastic modulus may be mixed.

  1, 1B Organic EL device, 10 Anode (first electrode), 11 Cathode (second electrode), 12 Light emitting layer (functional layer), 13a Outer side surface (surface forming outer side portion), 16a Outer side surface (outer side portion Forming surface), 16b upper surface (surface forming the outer portion), 17 electrode protective layer, 18 organic buffer layer, 19 gas barrier layer, 20 substrate body (substrate), 20a surface (substrate surface), 21 light emitting element, 22A first 1 cathode wiring (conductive member), 22B second cathode wiring (conductive member), 24, 24B cathode connection layer (connecting conductive member), W enclosing member, θ1 angle, θ2 angle, θ angle (contact angle).

Claims (6)

On the substrate,
An element region provided with a light emitting element including a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode;
A partition wall provided outside the element region;
A conductive member provided outside the partition;
A conductive member for connection for electrically connecting the second electrode and the conductive member;
The partition wall has an outer portion composed of a side surface facing the outer peripheral side of the base body,
The conductive member for connection is provided so as to cover the outer portion of the partition wall, and is provided along a first side that forms the outer periphery of the base and a second side that faces the first side. ,
The connecting conductive member is not provided in the element region,
The organic EL device, wherein the second electrode is not provided on the outer portion of the partition wall. The partition wall has the outer portion and the crown portion,
2. The organic EL device according to claim 1, wherein the connecting conductive member and the second electrode are electrically connected to each other at the top of the partition wall.   The organic EL device according to claim 1, wherein a thickness of the connecting conductive member is larger than a thickness of the second electrode. An enclosure member having the partition and a planarization layer provided outside the partition;
The organic EL device according to claim 1, wherein the conductive member is provided outside the surrounding member.   5. The organic EL device according to claim 1, wherein the connecting conductive member is formed of a material having a smaller ionization tendency than the material of the second electrode.   An electrode protection layer covering the second electrode and the connecting conductive member; an organic buffer layer formed on the electrode protection layer and covering an outer surface of the surrounding member; the organic buffer layer and the electrode 6. The organic EL device according to claim 1, further comprising a gas barrier layer that covers the protective layer.

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