JP4960993B2 - 金属配線の形成方法及びこれを利用して形成された金属配線 - Google Patents
金属配線の形成方法及びこれを利用して形成された金属配線 Download PDFInfo
- Publication number
- JP4960993B2 JP4960993B2 JP2009160057A JP2009160057A JP4960993B2 JP 4960993 B2 JP4960993 B2 JP 4960993B2 JP 2009160057 A JP2009160057 A JP 2009160057A JP 2009160057 A JP2009160057 A JP 2009160057A JP 4960993 B2 JP4960993 B2 JP 4960993B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- firing
- metal wiring
- forming
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/085—Using vacuum or low pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/086—Using an inert gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
[比較例]
Claims (9)
- 金属ナノ粒子及び前記金属ナノ粒子を分散された状態に維持するための分散剤を含むインク組成物に配線を印刷する段階と、
真空または不活性雰囲気下において前記配線を焼成することによって粒子成長を抑制する1次焼成段階と、
前記真空または不活性雰囲気を解除して前記配線を焼成することによって粒子成長を促進する2次焼成段階と、
前記2次焼成段階の後、5Mpa以上の圧力下において焼成を行う3次焼成段階と、
を含む金属配線の形成方法。 - 前記金属ナノ粒子は金、銀、銅、白金、鉛、インジウム、パラジウム、ロジウム、ルテニウム、イリジウム、オスミウム、タングステン、ニッケル、タンタル、ビスマス、錫、亜鉛、チタン、アルミニウム、コバルト、鉄及びこれらの混合物から成る群から選ばれる導電性材料であることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記金属ナノ粒子は、平均粒径が500nm以下であることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記分散剤は、前記金属ナノ粒子と配位結合を形成する物質または界面活性剤であることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記インク組成物で配線を印刷する方法は、スクリーン方式、インクジェットプリンティング方式、グラビア方式、スプレーコーティング方式またはオフセット印刷方式であることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記1次焼成は2次焼成温度まで昇温しながら行われることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記2次焼成は250℃以下で行われることを特徴とする請求項1に記載の金属配線の形成方法。
- 前記3次焼成は250℃以下で行われることを特徴とする請求項1に記載の金属配線の形成方法。
- 請求項1乃至請求項8のうちいずれか1項の方法で形成された金属配線。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0008492 | 2009-02-03 | ||
KR1020090008492A KR101038784B1 (ko) | 2009-02-03 | 2009-02-03 | 금속 배선의 형성방법 및 이를 이용하여 형성된 금속 배선 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010183053A JP2010183053A (ja) | 2010-08-19 |
JP4960993B2 true JP4960993B2 (ja) | 2012-06-27 |
Family
ID=42397965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009160057A Expired - Fee Related JP4960993B2 (ja) | 2009-02-03 | 2009-07-06 | 金属配線の形成方法及びこれを利用して形成された金属配線 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8216635B2 (ja) |
JP (1) | JP4960993B2 (ja) |
KR (1) | KR101038784B1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8460428B2 (en) * | 2009-04-30 | 2013-06-11 | William Marsh Rice University | Single-crystalline metal nanorings and methods for synthesis thereof |
KR101134352B1 (ko) | 2010-02-12 | 2012-04-09 | 서울대학교산학협력단 | 금속과 탄소나노튜브 복합재료 박막 형성방법 및 이를 이용하여 형성된 복합재료 박막 |
KR20120049477A (ko) * | 2010-11-09 | 2012-05-17 | 에스케이하이닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
JP2012142551A (ja) * | 2010-12-16 | 2012-07-26 | Nisshin:Kk | 加熱処理方法およびその装置 |
KR101118838B1 (ko) * | 2010-12-29 | 2012-03-14 | 삼성전기주식회사 | 나노 금속 페이스트를 이용한 배선 및 전극의 형성 방법 |
CN104357791A (zh) * | 2014-11-13 | 2015-02-18 | 常熟市星源金属涂层厂 | 一种防锈金属涂层 |
CN104357837A (zh) * | 2014-11-13 | 2015-02-18 | 常熟市星源金属涂层厂 | 一种光亮金属涂层 |
WO2018043304A1 (ja) * | 2016-09-01 | 2018-03-08 | Jsr株式会社 | 基材表面の選択的修飾方法及び組成物 |
US9865527B1 (en) | 2016-12-22 | 2018-01-09 | Texas Instruments Incorporated | Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation |
US9941194B1 (en) | 2017-02-21 | 2018-04-10 | Texas Instruments Incorporated | Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3599950B2 (ja) * | 1997-04-16 | 2004-12-08 | 株式会社アルバック | 金属ペーストの焼成方法 |
JP3630920B2 (ja) * | 1997-05-02 | 2005-03-23 | 株式会社アルバック | 金属ペーストの焼成方法 |
JP4205393B2 (ja) | 2002-09-26 | 2009-01-07 | ハリマ化成株式会社 | 微細配線パターンの形成方法 |
JP3939735B2 (ja) * | 2003-05-16 | 2007-07-04 | ハリマ化成株式会社 | 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法 |
JP2006038999A (ja) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | レーザ照射を用いた導電性回路形成方法と導電性回路 |
KR100753468B1 (ko) * | 2005-03-11 | 2007-08-31 | 삼성전기주식회사 | 배선 재료, 배선 기판 및 배선 기판의 형성방법 |
KR100633846B1 (ko) | 2005-03-23 | 2006-10-13 | 삼성전기주식회사 | 도전성 배선재료, 배선기판의 제조방법 및 배선기판 |
KR100833017B1 (ko) | 2005-05-12 | 2008-05-27 | 주식회사 엘지화학 | 직접 패턴법을 이용한 고해상도 패턴형성방법 |
KR100735411B1 (ko) * | 2005-12-07 | 2007-07-04 | 삼성전기주식회사 | 배선기판의 제조방법 및 배선기판 |
JP4593502B2 (ja) * | 2006-03-27 | 2010-12-08 | 古河電気工業株式会社 | 金属酸化物粒子もしくは金属粒子の表面酸化被膜の還元焼成方法及び導電部品の形成方法 |
US7968008B2 (en) * | 2006-08-03 | 2011-06-28 | Fry's Metals, Inc. | Particles and inks and films using them |
JP2008176951A (ja) | 2007-01-16 | 2008-07-31 | Mitsubishi Chemicals Corp | 銀系微粒子インクペースト |
-
2009
- 2009-02-03 KR KR1020090008492A patent/KR101038784B1/ko not_active IP Right Cessation
- 2009-07-06 JP JP2009160057A patent/JP4960993B2/ja not_active Expired - Fee Related
- 2009-07-15 US US12/503,491 patent/US8216635B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101038784B1 (ko) | 2011-06-03 |
JP2010183053A (ja) | 2010-08-19 |
KR20100089302A (ko) | 2010-08-12 |
US8216635B2 (en) | 2012-07-10 |
US20100196681A1 (en) | 2010-08-05 |
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