JP4958330B2 - 半導体上の欠陥材料を自動的に分析するシステム及び方法 - Google Patents

半導体上の欠陥材料を自動的に分析するシステム及び方法 Download PDF

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JP4958330B2
JP4958330B2 JP2000046227A JP2000046227A JP4958330B2 JP 4958330 B2 JP4958330 B2 JP 4958330B2 JP 2000046227 A JP2000046227 A JP 2000046227A JP 2000046227 A JP2000046227 A JP 2000046227A JP 4958330 B2 JP4958330 B2 JP 4958330B2
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JP2000321225A (ja
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ドタン ノーム
カディシェヴィッチ アレクサンダー
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Applied Materials Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2555—Microprobes, i.e. particle-induced X-ray spectrometry
    • H01J2237/2561—Microprobes, i.e. particle-induced X-ray spectrometry electron

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000046227A 1999-02-23 2000-02-23 半導体上の欠陥材料を自動的に分析するシステム及び方法 Expired - Lifetime JP4958330B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/255495 1999-02-23
US09/255,495 US6407386B1 (en) 1999-02-23 1999-02-23 System and method for automatic analysis of defect material on semiconductors

Related Child Applications (1)

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JP2010249819A Division JP5065468B2 (ja) 1999-02-23 2010-11-08 半導体上の欠陥材料を自動的に分析するシステム及び方法

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JP2000321225A JP2000321225A (ja) 2000-11-24
JP4958330B2 true JP4958330B2 (ja) 2012-06-20

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JP2000046227A Expired - Lifetime JP4958330B2 (ja) 1999-02-23 2000-02-23 半導体上の欠陥材料を自動的に分析するシステム及び方法
JP2010249819A Expired - Lifetime JP5065468B2 (ja) 1999-02-23 2010-11-08 半導体上の欠陥材料を自動的に分析するシステム及び方法

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JP (2) JP4958330B2 (enExample)

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JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP3874996B2 (ja) * 2000-05-30 2007-01-31 ファブソリューション株式会社 デバイス検査方法および装置
JP3847568B2 (ja) * 2001-03-01 2006-11-22 ファブソリューション株式会社 半導体装置製造方法
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
JP2003107022A (ja) * 2001-09-28 2003-04-09 Hitachi Ltd 欠陥検査装置及び検査方法
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
US7473911B2 (en) * 2002-07-30 2009-01-06 Applied Materials, Israel, Ltd. Specimen current mapper
US6959251B2 (en) * 2002-08-23 2005-10-25 Kla-Tencor Technologies, Corporation Inspection system setup techniques
JP2004151045A (ja) 2002-11-01 2004-05-27 Hitachi High-Technologies Corp 電子顕微鏡またはｘ線分析装置及び試料の分析方法
US7202475B1 (en) 2003-03-06 2007-04-10 Kla-Tencor Technologies Corporation Rapid defect composition mapping using multiple X-ray emission perspective detection scheme
US6996492B1 (en) 2003-03-18 2006-02-07 Kla-Tencor Technologies Corporation Spectrum simulation for semiconductor feature inspection
US7132652B1 (en) * 2003-03-25 2006-11-07 Kla-Tencor Technologies Corporation Automatic classification of defects using pattern recognition applied to X-ray spectra
US6952653B2 (en) * 2003-04-29 2005-10-04 Kla-Tencor Technologies Corporation Single tool defect classification solution
US6822472B1 (en) 2003-06-27 2004-11-23 International Business Machines Corporation Detection of hard mask remaining on a surface of an insulating layer
TWI225674B (en) * 2003-09-03 2004-12-21 Powerchip Semiconductor Corp Method of defect root cause analysis
JP4136883B2 (ja) * 2003-10-03 2008-08-20 株式会社日立ハイテクノロジーズ 欠陥観察方法
US7075073B1 (en) 2004-05-21 2006-07-11 Kla-Tencor Technologies Corporation Angle resolved x-ray detection
JP5134188B2 (ja) * 2004-10-15 2013-01-30 ケーエルエー−テンカー コーポレイション 試料上の欠陥を分析する装置
JP4881307B2 (ja) * 2005-08-04 2012-02-22 エスアイアイ・ナノテクノロジー株式会社 蛍光ｘ線分析方法
US20070280526A1 (en) * 2006-05-30 2007-12-06 Irfan Malik Determining Information about Defects or Binning Defects Detected on a Wafer after an Immersion Lithography Process is Performed on the Wafer
US20080233487A1 (en) * 2007-03-21 2008-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System for Optimizing Lithography Focus and/or Energy Using a Specially-Designed Optical Critical Dimension Pattern
CN102735747A (zh) * 2012-04-10 2012-10-17 南京航空航天大学 高速铁路钢轨高速漏磁巡检的缺陷定量识别方法
TW201432253A (zh) * 2012-12-28 2014-08-16 Hitachi High Tech Corp 帶電粒子束裝置及其缺陷分析方法
US9714908B2 (en) * 2013-11-06 2017-07-25 Fei Company Sub-pixel analysis and display of fine grained mineral samples
US9696268B2 (en) 2014-10-27 2017-07-04 Kla-Tencor Corporation Automated decision-based energy-dispersive x-ray methodology and apparatus
CN106383134B (zh) * 2016-09-22 2019-04-05 福州大学 一种x射线多晶衍射仪用自动换样装置
US10234402B2 (en) 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
DE102020102502A1 (de) 2020-01-31 2021-08-05 Carl Zeiss Microscopy Gmbh Verfahren, Teilchenstrahlsystem und Computerprogrammprodukt zur energiedispersiven Röntgenspektroskopie
KR102728792B1 (ko) * 2022-02-15 2024-11-11 에스케이실트론 주식회사 실리콘 웨이퍼의 미세 입자 결함의 판단 방법
CN119008447B (zh) * 2024-10-21 2025-06-13 江苏永鼎股份有限公司 一种外延前晶圆表面处理方法及装置

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US3813545A (en) * 1973-04-12 1974-05-28 Edax Int Inc X-ray scan area mapping system
US5568400A (en) * 1989-09-01 1996-10-22 Stark; Edward W. Multiplicative signal correction method and apparatus
JPH04131751A (ja) * 1990-09-22 1992-05-06 Rigaku Denki Kogyo Kk 蛍光ｘ線分析方法
JP3094199B2 (ja) * 1994-04-01 2000-10-03 セイコーインスツルメンツ株式会社 微小部分析方法
JP3455306B2 (ja) * 1994-10-24 2003-10-14 三菱電機株式会社 異物分析装置及び半導体製造制御装置並びに異物分析方法及び半導体製造制御方法
JPH09283582A (ja) * 1996-04-17 1997-10-31 Fujitsu Ltd 異物組成自動分析装置及び異物組成自動分析方法
JPH10153579A (ja) * 1996-11-21 1998-06-09 Hitachi Ltd 試料分析方法および装置
JP3500264B2 (ja) * 1997-01-29 2004-02-23 株式会社日立製作所 試料分析装置

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JP2000321225A (ja) 2000-11-24
JP2011027753A (ja) 2011-02-10
JP5065468B2 (ja) 2012-10-31
US6407386B1 (en) 2002-06-18

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