JP4956080B2 - プラズマエッチング装置 - Google Patents

プラズマエッチング装置 Download PDF

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Publication number
JP4956080B2
JP4956080B2 JP2006203029A JP2006203029A JP4956080B2 JP 4956080 B2 JP4956080 B2 JP 4956080B2 JP 2006203029 A JP2006203029 A JP 2006203029A JP 2006203029 A JP2006203029 A JP 2006203029A JP 4956080 B2 JP4956080 B2 JP 4956080B2
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Japan
Prior art keywords
substrate
chamber
plasma
wall
region
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English (en)
Japanese (ja)
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JP2007043148A5 (OSRAM
JP2007043148A (ja
Inventor
ブ イル ジョン
Original Assignee
ジュスン エンジニアリング カンパニー リミテッド
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Publication of JP2007043148A5 publication Critical patent/JP2007043148A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2006203029A 2005-07-29 2006-07-26 プラズマエッチング装置 Active JP4956080B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050069391A KR101149332B1 (ko) 2005-07-29 2005-07-29 플라즈마 식각 장치
KR2005-069391 2005-07-29

Publications (3)

Publication Number Publication Date
JP2007043148A JP2007043148A (ja) 2007-02-15
JP2007043148A5 JP2007043148A5 (OSRAM) 2009-09-03
JP4956080B2 true JP4956080B2 (ja) 2012-06-20

Family

ID=36954515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006203029A Active JP4956080B2 (ja) 2005-07-29 2006-07-26 プラズマエッチング装置

Country Status (6)

Country Link
US (2) US7879187B2 (OSRAM)
EP (1) EP1748465B1 (OSRAM)
JP (1) JP4956080B2 (OSRAM)
KR (1) KR101149332B1 (OSRAM)
CN (1) CN1905135B (OSRAM)
TW (1) TWI404138B (OSRAM)

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KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8888950B2 (en) 2007-03-16 2014-11-18 Charm Engineering Co., Ltd. Apparatus for plasma processing and method for plasma processing
WO2008120946A1 (en) 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
WO2013048013A1 (ko) * 2011-09-28 2013-04-04 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101405066B1 (ko) * 2011-09-28 2014-06-13 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101415740B1 (ko) * 2012-10-04 2014-07-04 한국기초과학지원연구원 원격 플라즈마 소스 에싱 장치
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
EP3092324B1 (en) * 2014-01-09 2020-07-15 United Technologies Corporation Coating process using gas screen
US9885110B2 (en) 2014-08-06 2018-02-06 United Technologies Corporation Pressure modulated coating
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
JP7564123B2 (ja) * 2019-04-11 2024-10-08 アプライド マテリアルズ インコーポレイテッド 処理チャンバ内でのプラズマの高密度化
US10749248B1 (en) * 2019-09-23 2020-08-18 Qualcomm Incorporated Antenna module placement and housing for reduced power density exposure
CN119495544A (zh) * 2023-08-21 2025-02-21 中微半导体设备(上海)股份有限公司 一种刻蚀设备及其衬底处理系统和器件制备方法

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US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
KR100525961B1 (ko) 1996-11-04 2005-12-21 어플라이드 머티어리얼스, 인코포레이티드 플라즈마시스에서발생하는고주파를필터링하는플라즈마처리장치및방법
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6271129B1 (en) 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6492612B1 (en) * 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
KR100433008B1 (ko) 2001-04-18 2004-05-31 (주)소슬 플라즈마 식각 장치
KR100428813B1 (ko) 2001-09-18 2004-04-29 주성엔지니어링(주) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
KR100486712B1 (ko) 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP3692133B2 (ja) * 2002-12-04 2005-09-07 積水化学工業株式会社 ウェハー外縁の常圧プラズマ処理装置及びエッチング等の処理方法
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
KR100739890B1 (ko) * 2003-05-02 2007-07-13 동경 엘렉트론 주식회사 처리가스도입기구 및 플라즈마 처리장치
JP4122004B2 (ja) 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher

Also Published As

Publication number Publication date
TWI404138B (zh) 2013-08-01
EP1748465A3 (en) 2009-10-14
KR101149332B9 (ko) 2025-01-10
EP1748465B1 (en) 2015-04-15
TW200721299A (en) 2007-06-01
US7879187B2 (en) 2011-02-01
CN1905135A (zh) 2007-01-31
JP2007043148A (ja) 2007-02-15
US20110079581A1 (en) 2011-04-07
CN1905135B (zh) 2012-05-09
US20070029044A1 (en) 2007-02-08
KR101149332B1 (ko) 2012-05-23
US8177992B2 (en) 2012-05-15
KR20070014601A (ko) 2007-02-01
EP1748465A2 (en) 2007-01-31

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