TWI404138B - 電漿蝕刻裝置 - Google Patents
電漿蝕刻裝置 Download PDFInfo
- Publication number
- TWI404138B TWI404138B TW095127843A TW95127843A TWI404138B TW I404138 B TWI404138 B TW I404138B TW 095127843 A TW095127843 A TW 095127843A TW 95127843 A TW95127843 A TW 95127843A TW I404138 B TWI404138 B TW I404138B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- chamber
- shield
- plasma
- edge portion
- Prior art date
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 165
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 16
- 239000002245 particle Substances 0.000 abstract description 10
- 238000009616 inductively coupled plasma Methods 0.000 abstract description 8
- 238000007599 discharging Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 45
- 239000012495 reaction gas Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 7
- 239000012212 insulator Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 electrons Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050069391A KR101149332B1 (ko) | 2005-07-29 | 2005-07-29 | 플라즈마 식각 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200721299A TW200721299A (en) | 2007-06-01 |
| TWI404138B true TWI404138B (zh) | 2013-08-01 |
Family
ID=36954515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095127843A TWI404138B (zh) | 2005-07-29 | 2006-07-28 | 電漿蝕刻裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7879187B2 (OSRAM) |
| EP (1) | EP1748465B1 (OSRAM) |
| JP (1) | JP4956080B2 (OSRAM) |
| KR (1) | KR101149332B1 (OSRAM) |
| CN (1) | CN1905135B (OSRAM) |
| TW (1) | TWI404138B (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100978754B1 (ko) * | 2008-04-03 | 2010-08-30 | 주식회사 테스 | 플라즈마 처리 장치 |
| US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US8888950B2 (en) | 2007-03-16 | 2014-11-18 | Charm Engineering Co., Ltd. | Apparatus for plasma processing and method for plasma processing |
| WO2008120946A1 (en) | 2007-04-02 | 2008-10-09 | Sosul Co., Ltd. | Apparatus for supporting substrate and plasma etching apparatus having the same |
| US7981307B2 (en) * | 2007-10-02 | 2011-07-19 | Lam Research Corporation | Method and apparatus for shaping gas profile near bevel edge |
| WO2013048013A1 (ko) * | 2011-09-28 | 2013-04-04 | 한국기초과학지원연구원 | 비접촉식 플라즈마 에싱 장치 |
| KR101405066B1 (ko) * | 2011-09-28 | 2014-06-13 | 한국기초과학지원연구원 | 비접촉식 플라즈마 에싱 장치 |
| KR101415740B1 (ko) * | 2012-10-04 | 2014-07-04 | 한국기초과학지원연구원 | 원격 플라즈마 소스 에싱 장치 |
| KR20140140418A (ko) * | 2013-05-29 | 2014-12-09 | 삼성디스플레이 주식회사 | 유기층 에칭 장치 및 유기층 에칭 방법 |
| EP3092324B1 (en) * | 2014-01-09 | 2020-07-15 | United Technologies Corporation | Coating process using gas screen |
| US9885110B2 (en) | 2014-08-06 | 2018-02-06 | United Technologies Corporation | Pressure modulated coating |
| US11866816B2 (en) | 2016-07-06 | 2024-01-09 | Rtx Corporation | Apparatus for use in coating process |
| US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
| JP7564123B2 (ja) * | 2019-04-11 | 2024-10-08 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバ内でのプラズマの高密度化 |
| US10749248B1 (en) * | 2019-09-23 | 2020-08-18 | Qualcomm Incorporated | Antenna module placement and housing for reduced power density exposure |
| CN119495544A (zh) * | 2023-08-21 | 2025-02-21 | 中微半导体设备(上海)股份有限公司 | 一种刻蚀设备及其衬底处理系统和器件制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0840350A2 (en) * | 1996-11-04 | 1998-05-06 | Applied Materials, Inc. | Plasma apparatus and process with filtering of plasma sheath-generated harmonics |
| WO1999028527A1 (en) * | 1997-12-03 | 1999-06-10 | Applied Materials, Inc. | Method and apparatus for forming a metal layer |
| US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384008A (en) * | 1993-06-18 | 1995-01-24 | Applied Materials, Inc. | Process and apparatus for full wafer deposition |
| JP3521587B2 (ja) * | 1995-02-07 | 2004-04-19 | セイコーエプソン株式会社 | 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法 |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| DE19622015A1 (de) | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
| US6149730A (en) * | 1997-10-08 | 2000-11-21 | Nec Corporation | Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor |
| US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
| US6492612B1 (en) * | 1998-12-28 | 2002-12-10 | Tokyo Electron Limited | Plasma apparatus and lower electrode thereof |
| US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
| KR100433008B1 (ko) | 2001-04-18 | 2004-05-31 | (주)소슬 | 플라즈마 식각 장치 |
| KR100428813B1 (ko) | 2001-09-18 | 2004-04-29 | 주성엔지니어링(주) | 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법 |
| US7556740B2 (en) | 2002-08-27 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
| KR100486712B1 (ko) | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
| JP3692133B2 (ja) * | 2002-12-04 | 2005-09-07 | 積水化学工業株式会社 | ウェハー外縁の常圧プラズマ処理装置及びエッチング等の処理方法 |
| JP3712125B2 (ja) * | 2003-02-03 | 2005-11-02 | 東京応化工業株式会社 | プラズマ処理装置 |
| KR100739890B1 (ko) * | 2003-05-02 | 2007-07-13 | 동경 엘렉트론 주식회사 | 처리가스도입기구 및 플라즈마 처리장치 |
| JP4122004B2 (ja) | 2003-05-12 | 2008-07-23 | 株式会社ソスル | プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶 |
| US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
| US7943007B2 (en) * | 2007-01-26 | 2011-05-17 | Lam Research Corporation | Configurable bevel etcher |
-
2005
- 2005-07-29 KR KR1020050069391A patent/KR101149332B1/ko not_active Expired - Lifetime
-
2006
- 2006-07-26 JP JP2006203029A patent/JP4956080B2/ja active Active
- 2006-07-27 US US11/460,557 patent/US7879187B2/en not_active Expired - Fee Related
- 2006-07-28 TW TW095127843A patent/TWI404138B/zh active
- 2006-07-28 EP EP06118053.5A patent/EP1748465B1/en not_active Ceased
- 2006-07-28 CN CN2006101039752A patent/CN1905135B/zh active Active
-
2010
- 2010-12-13 US US12/967,026 patent/US8177992B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0840350A2 (en) * | 1996-11-04 | 1998-05-06 | Applied Materials, Inc. | Plasma apparatus and process with filtering of plasma sheath-generated harmonics |
| WO1999028527A1 (en) * | 1997-12-03 | 1999-06-10 | Applied Materials, Inc. | Method and apparatus for forming a metal layer |
| US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1748465A3 (en) | 2009-10-14 |
| KR101149332B9 (ko) | 2025-01-10 |
| EP1748465B1 (en) | 2015-04-15 |
| TW200721299A (en) | 2007-06-01 |
| US7879187B2 (en) | 2011-02-01 |
| CN1905135A (zh) | 2007-01-31 |
| JP2007043148A (ja) | 2007-02-15 |
| JP4956080B2 (ja) | 2012-06-20 |
| US20110079581A1 (en) | 2011-04-07 |
| CN1905135B (zh) | 2012-05-09 |
| US20070029044A1 (en) | 2007-02-08 |
| KR101149332B1 (ko) | 2012-05-23 |
| US8177992B2 (en) | 2012-05-15 |
| KR20070014601A (ko) | 2007-02-01 |
| EP1748465A2 (en) | 2007-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8177992B2 (en) | Plasma etching apparatus | |
| TWI404165B (zh) | 基材支撐裝置及包含該裝置之電漿蝕刻裝置 | |
| TWI407501B (zh) | 電漿蝕刻裝置 | |
| TWI502619B (zh) | 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法 | |
| TWI414017B (zh) | Plasma processing device and plasma processing method | |
| EP2026374B1 (en) | Plasma processing apparatus, plasma processing method and storage medium | |
| JP2007043149A5 (OSRAM) | ||
| JP4433614B2 (ja) | エッチング装置 | |
| US9960014B2 (en) | Plasma etching method | |
| KR102806341B1 (ko) | 포커스 링 및 이를 포함하는 플라즈마 처리 장치 | |
| KR20150143793A (ko) | 균일한 플라즈마 밀도를 가진 용량 결합형 플라즈마 장비 | |
| JPH10223607A (ja) | プラズマ処理装置 | |
| KR101423554B1 (ko) | 플라즈마 식각 장치 및 이를 이용한 웨이퍼 식각 방법 | |
| KR20090086783A (ko) | 플라즈마 식각 장치 | |
| KR100914398B1 (ko) | 플라즈마 기판 처리 장치 | |
| JP2000031121A (ja) | プラズマ放出装置及びプラズマ処理装置 | |
| KR100716263B1 (ko) | 건식 식각 장치 | |
| KR101146132B1 (ko) | 플라즈마 처리 장치 | |
| KR20070058760A (ko) | 저압 플라즈마 발생장치 | |
| KR100725614B1 (ko) | 플라즈마 처리 장치 | |
| KR100774979B1 (ko) | 기판을 처리하는 장치 및 방법 | |
| KR100774497B1 (ko) | 기판을 처리하는 장치 및 방법 | |
| KR20080020722A (ko) | 플라즈마 처리 장치 및 이를 이용한 기판의 처리 방법 | |
| KR20070118482A (ko) | 플라즈마 처리 장치 및 이를 이용한 기판 처리 방법 | |
| KR100772612B1 (ko) | 기판을 처리하는 장치 및 방법 |