JP4954495B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4954495B2
JP4954495B2 JP2005129349A JP2005129349A JP4954495B2 JP 4954495 B2 JP4954495 B2 JP 4954495B2 JP 2005129349 A JP2005129349 A JP 2005129349A JP 2005129349 A JP2005129349 A JP 2005129349A JP 4954495 B2 JP4954495 B2 JP 4954495B2
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Japan
Prior art keywords
film
layer
insulating film
light absorption
semiconductor film
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Expired - Fee Related
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JP2005129349A
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Japanese (ja)
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JP2006310445A5 (enExample
JP2006310445A (ja
Inventor
良明 山本
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005129349A priority Critical patent/JP4954495B2/ja
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Publication of JP2006310445A5 publication Critical patent/JP2006310445A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005129349A 2005-04-27 2005-04-27 半導体装置の作製方法 Expired - Fee Related JP4954495B2 (ja)

Priority Applications (1)

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JP2005129349A JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

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JP2005129349A JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

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JP2006310445A JP2006310445A (ja) 2006-11-09
JP2006310445A5 JP2006310445A5 (enExample) 2008-06-05
JP4954495B2 true JP4954495B2 (ja) 2012-06-13

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JP2005129349A Expired - Fee Related JP4954495B2 (ja) 2005-04-27 2005-04-27 半導体装置の作製方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
TWI438823B (zh) 2006-08-31 2014-05-21 半導體能源研究所股份有限公司 晶體半導體膜的製造方法和半導體裝置
US7972943B2 (en) 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5003277B2 (ja) 2007-05-18 2012-08-15 ソニー株式会社 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法
JP5268376B2 (ja) * 2008-01-29 2013-08-21 株式会社日立製作所 不揮発性記憶装置およびその製造方法
KR100982311B1 (ko) 2008-05-26 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR101116093B1 (ko) * 2009-06-26 2012-02-21 가시오게산키 가부시키가이샤 반도체장치 및 그 제조방법과 표시장치
JP2011009583A (ja) * 2009-06-26 2011-01-13 Casio Computer Co Ltd 半導体装置及びその製造方法並びに表示装置
TWI907190B (zh) * 2009-08-07 2025-12-01 日商半導體能源研究所股份有限公司 半導體裝置
CN104485336B (zh) * 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
JP5161941B2 (ja) 2010-09-08 2013-03-13 株式会社東芝 半導体装置の製造方法
JP5601363B2 (ja) * 2012-11-19 2014-10-08 ソニー株式会社 半導体装置、薄膜トランジスタ基板および表示装置
JP2017151443A (ja) * 2017-03-15 2017-08-31 株式会社半導体エネルギー研究所 液晶表示装置
KR102710429B1 (ko) * 2018-04-16 2024-09-26 신에쓰 가가꾸 고교 가부시끼가이샤 유기 el용 투명 건조제 및 그 사용 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236809A (ja) * 1985-08-10 1987-02-17 Fujitsu Ltd 単結晶成長方法
JP2001250952A (ja) * 2000-03-03 2001-09-14 Seiko Epson Corp 半導体装置の製造方法
JP4514908B2 (ja) * 2000-07-06 2010-07-28 シャープ株式会社 半導体装置の製造方法
JP2002093702A (ja) * 2000-09-14 2002-03-29 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003257859A (ja) * 2001-09-25 2003-09-12 Sharp Corp 結晶性半導体膜及びその形成方法、並びに半導体装置及びその製造方法
JP2003309068A (ja) * 2002-04-12 2003-10-31 Sharp Corp 半導体膜の形成方法および半導体膜、並びに半導体装置の製造方法および半導体装置
JP2004087667A (ja) * 2002-08-26 2004-03-18 Hitachi Cable Ltd 結晶シリコン系薄膜半導体装置の製造方法
JP2004119902A (ja) * 2002-09-27 2004-04-15 Sharp Corp 結晶性半導体膜およびその形成方法、並びに半導体装置およびその製造方法
JP4289018B2 (ja) * 2003-05-19 2009-07-01 日立電線株式会社 太陽光発電素子の製造方法
JP2005108987A (ja) * 2003-09-29 2005-04-21 Sharp Corp 半導体薄膜の結晶化装置および結晶化方法ならびに半導体装置の製造方法および半導体装置
JP2005158836A (ja) * 2003-11-21 2005-06-16 Hitachi Cable Ltd 薄膜半導体装置及びその製造方法
JP2005236130A (ja) * 2004-02-20 2005-09-02 Hitachi Cable Ltd 半導体装置の製造方法
JP2006165463A (ja) * 2004-12-10 2006-06-22 Sanyo Electric Co Ltd 半導体装置の製造方法

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