JP4954365B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4954365B2 JP4954365B2 JP2000361905A JP2000361905A JP4954365B2 JP 4954365 B2 JP4954365 B2 JP 4954365B2 JP 2000361905 A JP2000361905 A JP 2000361905A JP 2000361905 A JP2000361905 A JP 2000361905A JP 4954365 B2 JP4954365 B2 JP 4954365B2
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- film
- source line
- insulating film
- wiring
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000361905A JP4954365B2 (ja) | 2000-11-28 | 2000-11-28 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000361905A JP4954365B2 (ja) | 2000-11-28 | 2000-11-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002222954A JP2002222954A (ja) | 2002-08-09 |
| JP2002222954A5 JP2002222954A5 (enExample) | 2008-01-24 |
| JP4954365B2 true JP4954365B2 (ja) | 2012-06-13 |
Family
ID=18833275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000361905A Expired - Fee Related JP4954365B2 (ja) | 2000-11-28 | 2000-11-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4954365B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP4275644B2 (ja) * | 2004-06-23 | 2009-06-10 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法、並びに電子装置 |
| US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP5572757B2 (ja) | 2011-02-28 | 2014-08-13 | シャープ株式会社 | 電極基板並びにそれを備えた表示装置及びタッチパネル |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2720470B2 (ja) * | 1988-08-26 | 1998-03-04 | 富士通株式会社 | 薄膜トランジスタマトリクスの製造方法 |
| JPH03260631A (ja) * | 1990-03-12 | 1991-11-20 | Fujitsu Ltd | 薄膜トランジスタマトリクスとその製造方法 |
| JPH04313729A (ja) * | 1991-04-09 | 1992-11-05 | Mitsubishi Electric Corp | 液晶表示装置 |
| JP2556262B2 (ja) * | 1993-07-07 | 1996-11-20 | 日本電気株式会社 | 液晶表示パネル |
| JPH10198292A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
-
2000
- 2000-11-28 JP JP2000361905A patent/JP4954365B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002222954A (ja) | 2002-08-09 |
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