JP4949540B2 - 太陽電池及びその製造法 - Google Patents
太陽電池及びその製造法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 72
- 150000004767 nitrides Chemical class 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 45
- 229910002804 graphite Inorganic materials 0.000 claims description 42
- 239000010439 graphite Substances 0.000 claims description 42
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 24
- 230000031700 light absorption Effects 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 238000004380 ashing Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 56
- 229910002601 GaN Inorganic materials 0.000 description 55
- 210000004027 cell Anatomy 0.000 description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000010408 film Substances 0.000 description 23
- 239000010409 thin film Substances 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Description
図1は、実施の形態1による太陽電池の断面図である。図1に示されるように、アモルファスカーボン層102がグラファイト基板101の表面に形成されている。アモルファスカーボン層102は、グラファイト基板101の表面への酸素アッシング処理によって形成される。アモルファスカーボン層102上には、AlN層103が形成されている。AlN層103は、例えば、MOCVD法によって形成され得る。
以下の実施例により、本発明をより詳細に説明する。
6a 基板
8a 半導体領域
10a ナノコラム
12a 第一ナノコラム部
14a 第二ナノコラム部
24a 第2電極
101 グラファイト基板
102 アモルファスカーボン層
103 AlN層
104 低温成長バッファ層
105 第一のn型GaN層
106 マスク層
107 第二のn型GaN層
108 光吸収層
109 p型GaN層
110 p型GaNコンタクト層
111 p側電極
112 n側電極
113 開口部
Claims (12)
- 以下の工程を具備する太陽電池を製造する方法:
グラファイト基板の表面に酸素アッシング処理を行って、アモルファスカーボン層を前記グラファイト基板の表面に形成する工程、
前記アモルファスカーボン層上にMOCVD(有機金属気相成長法)によってAlN層を形成する工程、
前記AlN層上にn型窒化物半導体層を形成する工程、
前記n型窒化物半導体層上に複数の開口部を有するマスク層を形成する工程、
前記複数の開口部から露出する前記n型窒化物半導体層の部分上に複数の第2のn型窒化物半導体層を形成する工程、
前記複数の第2のn型窒化物半導体層上に窒化物半導体からなる複数の光吸収層を形成する工程、
前記複数の光吸収層上に複数のp型窒化物半導体層を形成する工程、
前記複数のp型窒化物半導体層に電気的に接続されたp側電極を形成する工程、および、
前記n型窒化物半導体層に電気的に接続されたn側電極を形成する工程 - 前記アモルファスカーボン層が20nm以上60nm以下の厚みを有する、前記項1に記載の方法。
- n型窒化物半導体層を形成する前に、前記AlN層上に窒化物半導体からなるバッファ層を形成する工程をさらに有する、前記項1に記載の方法。
- n型窒化物半導体層を形成する前に、前記AlN層上に窒化物半導体からなるバッファ層を形成する工程をさらに有する、前記項2に記載の方法。
- p型電極がZnO透明導電膜である、前記項1に記載の方法。
- p型電極がZnO透明導電膜である、前記項4に記載の方法。
- グラファイト基板、
前記グラファイト基板上に形成されたアモルファスカーボン層、
前記アモルファスカーボン層上に形成されたAlN層、
前記AlN層上に形成された第1のn型窒化物半導体層、
前記n型窒化物半導体層上に形成された複数の第2のn型窒化物半導体層、ここで、前記各n型窒化物半導体層は柱状であり、
前記複数の第2のn型窒化物半導体層上に形成された窒化物半導体を具備する複数の光吸収層、
前記複数の光吸収層上に形成された複数のp型窒化物半導体層、
前記複数のp型窒化物半導体層に電気的に接続されたp側電極、および
前記n型窒化物半導体層に電気的に接続されたn側電極
を具備する太陽電池。 - 前記アモルファスカーボン層が20nm以上60nm以下の厚みを有する、前記項7に記載の太陽電池。
- 前記AlN層と前記n型窒化物半導体層との間に挟まれた窒化物半導体からなるバッファ層をさらに備える、前記項7に記載の太陽電池。
- 前記AlN層と前記n型窒化物半導体層との間に挟まれた窒化物半導体からなるバッファ層をさらに備える、前記項8に記載の太陽電池。
- p型電極がZnO透明導電膜である、前記項7に記載の太陽電池。
- p型電極がZnO透明導電膜である、前記項10に記載の太陽電池。
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JP (1) | JP4949540B2 (ja) |
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GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
WO2015061325A1 (en) * | 2013-10-21 | 2015-04-30 | Sensor Electronic Technology, Inc. | Heterostructure including a composite semiconductor layer |
WO2017009394A1 (en) | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
AU2016292850B2 (en) | 2015-07-13 | 2019-05-16 | Crayonano As | Nanowires or nanopyramids grown on graphitic substrate |
KR102698244B1 (ko) | 2015-07-31 | 2024-08-22 | 크래요나노 에이에스 | 그라파이트 기판 상에 나노와이어 또는 나노피라미드를 성장시키는 방법 |
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Also Published As
Publication number | Publication date |
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