JP4943921B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP4943921B2 JP4943921B2 JP2007102483A JP2007102483A JP4943921B2 JP 4943921 B2 JP4943921 B2 JP 4943921B2 JP 2007102483 A JP2007102483 A JP 2007102483A JP 2007102483 A JP2007102483 A JP 2007102483A JP 4943921 B2 JP4943921 B2 JP 4943921B2
- Authority
- JP
- Japan
- Prior art keywords
- sealant
- insulating substrate
- substrate
- thin film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 239000000565 sealant Substances 0.000 claims abstract description 107
- 238000005538 encapsulation Methods 0.000 claims abstract 3
- 239000010409 thin film Substances 0.000 claims description 55
- 238000007789 sealing Methods 0.000 claims description 53
- 239000010408 film Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910017107 AlOx Inorganic materials 0.000 claims description 4
- -1 SiONx Inorganic materials 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 abstract description 28
- 239000001301 oxygen Substances 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000035699 permeability Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000007735 ion beam assisted deposition Methods 0.000 description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Description
100 絶縁基板
110 表示素子
120 カバー基板
130 第1シーラント
140 第2シーラント
150 封止薄膜
Claims (6)
- 表示素子が設けられている絶縁基板と、
前記絶縁基板に対向して接合されるカバー基板と、
前記絶縁基板と前記カバー基板のうちのいずれか一方の基板の周縁に沿って設けられ、相互に離隔して配置される複数の第1シーラントと、
前記絶縁基板と前記カバー基板のうちのもう一方の基板の周縁に沿って設けられ、互いに隣接する前記複数の第1シーラントの間に少なくとも一つが配置される第2シーラントと、
前記第1シーラントと前記第2シーラントとの間に介在され、無機物質からなる封止薄膜と
を含み、
前記複数の第1シーラントの高さと前記第2シーラントの高さとは、実質的に同一であり、
前記互いに隣接する複数の第1シーラントの離隔距離と前記第2シーラントの幅とは、実質的に同一であり、
前記封止薄膜は、前記絶縁基板及び前記カバー基板のいずれにも接することを特徴とする表示装置。 - 前記複数の第1シーラントおよび前記第2シーラントの表面は曲面形状であることを特徴とする、請求項1に記載の表示装置。
- 互いに対向する前記絶縁基板と前記カバー基板の両面の間の距離は前記第1シーラントおよび前記第2シーラントのうちのいずれか一つの高さと前記封止薄膜の厚さとの合計と実質的に同一であることを特徴とする、請求項2に記載の表示装置。
- 前記封止薄膜は複数の層からなることを特徴とする、請求項1に記載の表示装置。
- 前記封止薄膜はSiOx、SiNx、SiONx、AlOx、AlONx、およびAlNxのうちの少なくとも一つを含むことを特徴とする、請求項1乃至4の何れか一項に記載の表示装置。
- 前記封止薄膜は前記絶縁基板と前記カバー基板の間の周縁に沿って形成されていることを特徴とする、請求項1乃至5の何れか一項に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0049549 | 2006-06-01 | ||
KR1020060049549A KR100688972B1 (ko) | 2006-06-01 | 2006-06-01 | 표시장치와 이의 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007324121A JP2007324121A (ja) | 2007-12-13 |
JP2007324121A5 JP2007324121A5 (ja) | 2010-04-08 |
JP4943921B2 true JP4943921B2 (ja) | 2012-05-30 |
Family
ID=38102266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007102483A Expired - Fee Related JP4943921B2 (ja) | 2006-06-01 | 2007-04-10 | 表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7671959B2 (ja) |
JP (1) | JP4943921B2 (ja) |
KR (1) | KR100688972B1 (ja) |
CN (1) | CN101083277B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100875099B1 (ko) * | 2007-06-05 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
JP4961271B2 (ja) * | 2007-06-12 | 2012-06-27 | シャープ株式会社 | 液晶表示パネルの製造方法及び液晶表示パネル |
KR101307550B1 (ko) | 2007-12-31 | 2013-09-12 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
KR101301180B1 (ko) * | 2008-11-21 | 2013-08-28 | 엘지디스플레이 주식회사 | 듀얼플레이트 방식의 유기전계 발광소자 및 그 합착 방법 |
KR101084175B1 (ko) * | 2009-11-23 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
KR101084179B1 (ko) * | 2009-12-28 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 소자의 봉지 방법 |
KR101754916B1 (ko) * | 2010-11-08 | 2017-07-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
CN102738089B (zh) * | 2012-03-07 | 2018-02-23 | 苏州晶方半导体科技股份有限公司 | 半导体封装结构及其模组 |
CN103325960B (zh) * | 2012-03-23 | 2016-03-16 | 昆山工研院新型平板显示技术中心有限公司 | 有机光电子器件的薄膜封装方法 |
TW201347167A (zh) * | 2012-05-15 | 2013-11-16 | Innocom Tech Shenzhen Co Ltd | 有機發光二極體顯示裝置 |
CN103794733A (zh) * | 2012-10-31 | 2014-05-14 | 财团法人工业技术研究院 | 环境敏感电子元件封装体 |
KR101420332B1 (ko) * | 2012-11-14 | 2014-07-16 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 |
CN102983290B (zh) * | 2012-11-21 | 2015-12-02 | 京东方科技集团股份有限公司 | 一种oled器件封装方法及oled显示装置 |
TWI552331B (zh) * | 2013-01-11 | 2016-10-01 | 財團法人工業技術研究院 | 電子元件之封裝結構 |
CN104051357B (zh) | 2013-03-15 | 2017-04-12 | 财团法人工业技术研究院 | 环境敏感电子装置以及其封装方法 |
WO2015143389A1 (en) * | 2014-03-20 | 2015-09-24 | Arizona Science And Technology Enterprises, Llc | Pagophobic coating compositions, method of manufacture and methods of use |
CN104201291A (zh) * | 2014-08-26 | 2014-12-10 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及其制备方法 |
KR102296916B1 (ko) | 2014-10-16 | 2021-09-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102472238B1 (ko) | 2014-10-17 | 2022-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 모듈, 전자 기기, 및 발광 장치의 제작 방법 |
CN104576697A (zh) * | 2014-12-24 | 2015-04-29 | 深圳市华星光电技术有限公司 | 双面oled显示装置及其制作方法 |
WO2017017553A1 (en) | 2015-07-30 | 2017-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device, light-emitting device, module, and electronic device |
CN106887413A (zh) * | 2015-12-16 | 2017-06-23 | 上海和辉光电有限公司 | 一种封装结构及其制备方法 |
US10501640B2 (en) | 2017-01-31 | 2019-12-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Nanoporous materials, method of manufacture and methods of use |
JP6817145B2 (ja) * | 2017-05-29 | 2021-01-20 | エルジー ディスプレイ カンパニー リミテッド | 有機電界発光装置および有機電界発光装置の製造方法 |
CN109188789A (zh) * | 2018-11-09 | 2019-01-11 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
CN110379298B (zh) * | 2019-07-19 | 2021-06-01 | 深圳市华星光电半导体显示技术有限公司 | 框胶结构和显示面板的制作方法 |
CN110429206B (zh) * | 2019-08-07 | 2021-11-23 | 京东方科技集团股份有限公司 | 封装盖板、显示装置、显示面板及显示面板的封装方法 |
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KR20030001156A (ko) * | 2001-06-28 | 2003-01-06 | 주식회사 대한전광 | 다중 쉴드 커버 플레이트를 가진 유기 전계발광 소자 |
CN1215361C (zh) * | 2002-07-30 | 2005-08-17 | Nec液晶技术株式会社 | 液晶显示器及其制造方法 |
SG142140A1 (en) * | 2003-06-27 | 2008-05-28 | Semiconductor Energy Lab | Display device and method of manufacturing thereof |
JP4520226B2 (ja) * | 2003-06-27 | 2010-08-04 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の作製方法 |
JP4831954B2 (ja) * | 2003-11-14 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR100992141B1 (ko) | 2003-11-19 | 2010-11-04 | 삼성전자주식회사 | 유기 발광 표시장치 |
KR100557728B1 (ko) | 2003-12-27 | 2006-03-06 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
JP2005340020A (ja) | 2004-05-27 | 2005-12-08 | Hitachi Displays Ltd | 有機エレクトロルミネッセンス表示装置およびその製造方法 |
KR100603350B1 (ko) * | 2004-06-17 | 2006-07-20 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 |
US20070172971A1 (en) * | 2006-01-20 | 2007-07-26 | Eastman Kodak Company | Desiccant sealing arrangement for OLED devices |
-
2006
- 2006-06-01 KR KR1020060049549A patent/KR100688972B1/ko active IP Right Grant
-
2007
- 2007-04-10 JP JP2007102483A patent/JP4943921B2/ja not_active Expired - Fee Related
- 2007-05-24 US US11/753,259 patent/US7671959B2/en not_active Expired - Fee Related
- 2007-06-01 CN CN2007101054780A patent/CN101083277B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7671959B2 (en) | 2010-03-02 |
US20070279571A1 (en) | 2007-12-06 |
CN101083277B (zh) | 2010-11-10 |
KR100688972B1 (ko) | 2007-03-08 |
CN101083277A (zh) | 2007-12-05 |
JP2007324121A (ja) | 2007-12-13 |
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