JP4938754B2 - グラファイト基板上にダイヤモンド層を堆積させるための方法 - Google Patents
グラファイト基板上にダイヤモンド層を堆積させるための方法 Download PDFInfo
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- JP4938754B2 JP4938754B2 JP2008320608A JP2008320608A JP4938754B2 JP 4938754 B2 JP4938754 B2 JP 4938754B2 JP 2008320608 A JP2008320608 A JP 2008320608A JP 2008320608 A JP2008320608 A JP 2008320608A JP 4938754 B2 JP4938754 B2 JP 4938754B2
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- 238000000034 method Methods 0.000 title claims abstract description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 52
- 239000010439 graphite Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 38
- 239000010432 diamond Substances 0.000 title claims abstract description 38
- 238000000151 deposition Methods 0.000 title claims description 7
- 239000002245 particle Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 20
- 238000010899 nucleation Methods 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000007872 degassing Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 11
- 239000000725 suspension Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000003795 desorption Methods 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 238000005406 washing Methods 0.000 claims description 6
- 230000001464 adherent effect Effects 0.000 claims description 3
- 238000009331 sowing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 21
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 graphite compound Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000003473 lipid group Chemical group 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Description
エッチングガス雰囲気中において、真空中、>500℃、好ましくは>800℃の温度で表面を洗浄する工程、
固着していない粒子(loser Partikel)を機械的に除去する工程、
微小のダイヤモンド粒子により、基板の表面に播種する工程、および
吸着された炭化水素および吸着された空気を除去するために、T>500℃、好ましくはT>700℃の温度で、真空中で少なくとも1回の脱気処理を行なう工程
に供する。
脱脂/脱油するために、有機溶媒としてイソプロパノールを用いてグラファイト表面を粗洗浄し、
約10mm厚のグラファイト基板について、溶媒および吸着されない水を170℃で2時間のアニールにより除去するための脱着工程を行い、
真空(圧力<10mbar)中で10時間、炭化水素および空気を脱気し、
870℃、水素ガス中7mbarのガス圧力で、約1時間のアニールにより真空法における処理により表面を洗浄し、
洗浄の際、表面から生じた固着していない粒子を(拭き取りによって)機械的に除去し、
水性/アルコール性の懸濁媒体を用いて、グラファイトの表面にダイヤモンド懸濁液により播種し、
(グラファイト基板の厚さ10mm)空気中で約2時間の170℃のアニールにより水性の懸濁媒体を除去するための脱着工程を行い、
真空中で10時間800℃を超える温度で、実際のコーティング工程の前に炭化水素および空気を脱気する。
Claims (13)
- CVDプロセスによりグラファイト基板上にダイヤモンド層を堆積させるための方法であって、前記グラファイト基板を、前記CVDプロセスの前に、以下の前処理工程、すなわち、
エッチングガス雰囲気中において、真空中、T>500℃の温度で表面を洗浄する工程、
固着していない粒子を機械的に除去する工程、
微小のダイヤモンド粒子により、前記基板の表面に播種する工程、および
吸着された炭化水素および吸着された空気を除去するために、T>500℃の温度で、真空中で少なくとも1回の脱気処理を行なう工程
に供する方法。 - 前記表面を洗浄する工程を、エッチングガス雰囲気中において、真空中、T>800℃の温度で行なう、請求項1に記載の方法。
- 前記脱気処理を行なう工程を、T>700℃の温度で行なう、請求項1または2に記載の方法。
- 前記洗浄工程を水素雰囲気中で行なう請求項1〜3のいずれか一項に記載の方法。
- 前記水素雰囲気をP<10mbarのガス圧力に調節する請求項4に記載の方法。
- ダイヤモンド粒子の懸濁液を用いて前記基板表面への播種を行なう請求項1〜5のいずれか一項に記載の方法。
- 続いて懸濁媒体を、前記グラファイト基板を加熱することにより除去する請求項6に記載の方法。
- 前記CVDプロセスの直前に前記脱気処理を行なう請求項1〜7のいずれか一項に記載の方法。
- 前記CVDプロセスを、水素中0.5〜3.0%のメタンのガス組成を用いて行なう請求項1〜8のいずれか一項に記載の方法。
- 前記CVDプロセスを、水素中、2%のメタンのガス組成を用いて行なう請求項1〜8のいずれか一項に記載の方法。
- 洗浄工程の前に、粗洗浄工程が追加される請求項1〜10のいずれか1に記載の方法。
- 前記粗洗浄工程を、有機溶媒により行なう請求項11に記載の方法。
- 続いて前記溶媒を除去するために、T>150℃の高温で脱着工程を行なう請求項12に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07024950.3 | 2007-12-21 | ||
EP07024950A EP2077344B1 (de) | 2007-12-21 | 2007-12-21 | Verfahren zur Aufbringung einer Diamantschicht auf ein Graphitsubstrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009149986A JP2009149986A (ja) | 2009-07-09 |
JP4938754B2 true JP4938754B2 (ja) | 2012-05-23 |
Family
ID=39666032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008320608A Active JP4938754B2 (ja) | 2007-12-21 | 2008-12-17 | グラファイト基板上にダイヤモンド層を堆積させるための方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8597731B2 (ja) |
EP (1) | EP2077344B1 (ja) |
JP (1) | JP4938754B2 (ja) |
KR (1) | KR20090068176A (ja) |
CN (1) | CN101580931A (ja) |
AT (1) | ATE486981T1 (ja) |
DE (1) | DE502007005577D1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011219285A (ja) * | 2010-04-06 | 2011-11-04 | Kobe Steel Ltd | ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材 |
CN103443653B (zh) * | 2011-04-01 | 2015-09-23 | 株式会社岛津制作所 | 辐射线检测器的制造方法以及辐射线检测器 |
JP5777962B2 (ja) * | 2011-07-14 | 2015-09-16 | 日本バイリーン株式会社 | ダイヤモンド膜の製造方法 |
EP3067324B1 (en) | 2015-03-11 | 2019-09-18 | Politechnika Gdanska | Method for the preparation of electrodes of boron-doped nanocrystalline diamond |
CN108140552A (zh) | 2015-09-08 | 2018-06-08 | 麻省理工学院 | 基于石墨烯的层转移的系统和方法 |
CN105624642A (zh) * | 2016-03-16 | 2016-06-01 | 大连理工大学 | 一种石墨衬底上直接沉积金刚石薄膜的方法 |
WO2017222796A2 (en) * | 2016-06-03 | 2017-12-28 | Massachusetts Institute Of Technology | Systems and methods for fabricating single-crystalline diamond membranes |
WO2018089444A1 (en) | 2016-11-08 | 2018-05-17 | Massachusetts Institute Of Technology | Systems and methods of dislocation filtering for layer transfer |
KR20190118189A (ko) | 2017-02-24 | 2019-10-17 | 메사추세츠 인스티튜트 오브 테크놀로지 | 곡선형 초점면 어레이를 위한 장치 및 방법들 |
CN111825479B (zh) * | 2020-07-24 | 2022-08-05 | 江西宁新新材料股份有限公司 | 一种电化学-浸渍协同制备石墨耐高温复合涂层的方法 |
CN112111786A (zh) * | 2020-09-15 | 2020-12-22 | 郑州大学 | 一种光学级金刚石晶片的制备方法 |
DE102021110587A1 (de) | 2021-04-26 | 2022-10-27 | Condias Gmbh | Elektrode und Verfahren zum Herstellen |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4988421A (en) * | 1989-01-12 | 1991-01-29 | Ford Motor Company | Method of toughening diamond coated tools |
JP3638600B2 (ja) * | 1992-11-19 | 2005-04-13 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ダイヤモンドでコートされた形のある物品の製造 |
CA2249288A1 (en) * | 1996-03-18 | 1997-12-24 | Martin G. Bradley | Diamond film deposition |
DE19911746A1 (de) * | 1999-03-16 | 2000-09-21 | Basf Ag | Diamantelektroden |
US6893971B2 (en) * | 2001-07-19 | 2005-05-17 | Matsushita Electric Industrial Co., Ltd. | Dry etching method and apparatus |
JP4009090B2 (ja) * | 2001-11-08 | 2007-11-14 | 株式会社神戸製鋼所 | ダイヤモンド被覆非ダイヤモンド炭素部材の製造方法 |
JP2007269627A (ja) * | 2002-03-19 | 2007-10-18 | Central Res Inst Of Electric Power Ind | 基板から継続するマイクロパイプを低減させるSiC結晶の製造方法およびSiC結晶、SiC単結晶膜、SiC半導体素子、SiC単結晶基板および電子デバイス、ならびにSiCバルク結晶の製造方法 |
AU2003221438A1 (en) * | 2002-03-19 | 2003-09-29 | Central Research Institute Of Electric Power Industry | METHOD FOR PREPARING SiC CRYSTAL AND SiC CRYSTAL |
JP4456378B2 (ja) * | 2004-02-24 | 2010-04-28 | ペルメレック電極株式会社 | 導電性ダイヤモンド電極の製造方法 |
-
2007
- 2007-12-21 DE DE502007005577T patent/DE502007005577D1/de active Active
- 2007-12-21 AT AT07024950T patent/ATE486981T1/de active
- 2007-12-21 EP EP07024950A patent/EP2077344B1/de active Active
-
2008
- 2008-12-17 JP JP2008320608A patent/JP4938754B2/ja active Active
- 2008-12-18 US US12/338,107 patent/US8597731B2/en active Active
- 2008-12-19 KR KR1020080130567A patent/KR20090068176A/ko not_active Application Discontinuation
- 2008-12-22 CN CNA2008101074581A patent/CN101580931A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2009149986A (ja) | 2009-07-09 |
EP2077344B1 (de) | 2010-11-03 |
ATE486981T1 (de) | 2010-11-15 |
EP2077344A1 (de) | 2009-07-08 |
KR20090068176A (ko) | 2009-06-25 |
CN101580931A (zh) | 2009-11-18 |
US8597731B2 (en) | 2013-12-03 |
DE502007005577D1 (de) | 2010-12-16 |
US20090162549A1 (en) | 2009-06-25 |
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