CN103443653B - 辐射线检测器的制造方法以及辐射线检测器 - Google Patents
辐射线检测器的制造方法以及辐射线检测器 Download PDFInfo
- Publication number
- CN103443653B CN103443653B CN201280014189.9A CN201280014189A CN103443653B CN 103443653 B CN103443653 B CN 103443653B CN 201280014189 A CN201280014189 A CN 201280014189A CN 103443653 B CN103443653 B CN 103443653B
- Authority
- CN
- China
- Prior art keywords
- charcoal
- radiant rays
- detecting device
- semiconductor layer
- rays detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000003610 charcoal Substances 0.000 claims abstract description 82
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 74
- 239000010439 graphite Substances 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 20
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052714 tellurium Inorganic materials 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- 230000002159 abnormal effect Effects 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 description 21
- 239000010408 film Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021383 artificial graphite Inorganic materials 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021382 natural graphite Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14696—The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
- A61B6/42—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
- A61B6/4233—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
Abstract
在腔室(31)内收纳石墨基板(11)并通过泵(P)进行真空抽吸。接着,通过在真空中加热炭使炭中的杂质蒸发从而将炭进行纯化。通过将石墨基板(11)的炭进行纯化,能够将石墨基板(11)的炭所含有的半导体层的施主/受主元素、以及金属元素的杂质抑制到0.1ppm以下。其结果,能够抑制漏电流、异常漏点的产生、抑制半导体层中的晶体的异常生长。
Description
技术领域
本发明涉及医疗领域、工业领域、以及原子能领域等中使用的辐射线检测器的制造方法以及辐射线检测器。
背景技术
以往,研究和开发了各种半导体材料、特别是CdTe(碲化镉)或CdZnTe(碲化镉锌)的晶体,作为高灵敏度的辐射线检测器的材料,并且一部分制成了产品。在这种辐射线检测器中,对以CdTe或CdZnTe形成的半导体层施加偏置电压并取出信号,但是能够通过在支承基板中采用具有导电性的石墨基板,来省略电压施加电极用的共用电极(例如参照专利文献1、2)。
现有技术文献
专利文献
专利文献1:日本特开2008-71961号公报
专利文献2:日本特开2005-012049号公报
发明内容
发明要解决的问题
然而,如果在上述的以CdTe或CdZnTe形成的半导体层中存在杂质则电阻值会下降,导致漏电流的増加、异常漏点等的产生。另外,也会导致半导体层中的晶体的异常生长。
本发明鉴于上述情况而进行,其目的在于提供一种能够抑制漏电流、异常漏点的产生并抑制半导体层中的晶体的异常生长的辐射线检测器的制造方法以及辐射线检测器。
用于解决问题的方案
发明人等为了解决上述问题而深入研究,结果获得下述那样的见解。
即,为了解决上述问题,为了抑制在半导体层中掺杂(添加)的半导体层的施主/受主元素的杂质,以往抑制半导体层所含的杂质。另一方面,获得如下见解:在石墨基板的情况下,在由于基于人工或天然的石墨(graphite)而形成而未实施纯化处理的情况下,含有可检测程度的Al、B、Ca、Cr、Cu、Fe、K、Mg、Mn、Na、Ni、Si、Ti、V等杂质,但未对石墨基板实施任何处置。在石墨基板与半导体层之间隔着阻挡层或者在石墨基板上直接层叠半导体层,即使抑制了半导体层中所含的杂质,也有可能杂质从石墨基板侧掺杂到半导体层中。
基于这样的见解,本发明采用下述那样的构成。
即,本发明所涉及的辐射线检测器的制造方法为制造具备半导体层和电压施加电极用的石墨基板的辐射线检测器的方法,其中,所述半导体层因辐射线的入射而将辐射线的信息转换成为电荷信息,且以CdTe(碲化镉)或CdZnTe(碲化镉锌)来形成,所述电压施加电极用的石墨基板对该半导体层施加偏置电压,且兼用作支承基板,该制造方法的特征在于,将作为前述石墨基板的主构成元素的炭进行纯化。
[作用/效果]根据本发明所涉及的辐射线检测器的制造方法,通过将石墨基板的炭进行纯化,能够抑制石墨基板的炭所含有的半导体层的施主/受主元素、以及金属元素的杂质。其结果,还能够抑制从石墨基板侧向半导体层扩散的杂质(施主/受主元素、金属元素)。因而,能够抑制由半导体层中掺杂的施主/受主元素引起的漏电流、异常漏点的产生,抑制由半导体层中掺杂的金属元素引起的半导体层中的晶体的异常生长。
作为将炭进行纯化的一例,通过加热炭来进行纯化。在该例的情况下,能够将石墨基板中的杂质通过加热除去。作为加热的一例,通过在真空中加热炭使炭中的杂质蒸发从而将炭进行纯化。作为加热的另一例,通过在供给气体的状态下加热炭来将炭进行纯化。
另外,作为将炭进行纯化的另一例,通过洗涤炭来进行纯化。在该例的情况下,能够将石墨基板的表面的杂质通过洗涤除去。此外,可以将加热炭的一例与洗涤炭的一例两者组合。
另外,本发明所涉及的辐射线检测器具备半导体层和电压施加电极用的石墨基板,其中,所述半导体层因辐射线的入射而将辐射线的信息转换成为电荷信息,且以CdTe(碲化镉)或CdZnTe(碲化镉锌)来形成,所述电压施加电极用的石墨基板对该半导体层施加偏置电压,且兼用作支承基板,该辐射线检测器的特征在于,前述石墨基板的炭所含有的前述半导体层的施主/受主元素的杂质为0.1ppm以下。
[作用/效果]根据上述的本发明所涉及的辐射线检测器的制造方法,通过将石墨基板的炭进行纯化,能够实现使石墨基板的炭所含有的半导体层的施主/受主元素的杂质为0.1ppm以下的辐射线检测器。其结果,能够抑制漏电流、异常漏点的产生。
在本发明所涉及的辐射线检测器中,炭所含有的金属元素的杂质优选为0.1ppm以下。当半导体层中掺杂有金属元素时有可能形成晶核,从而引起半导体层中的晶体的异常生长。因此,通过将石墨基板的炭进行纯化,能够实现使石墨基板的炭所含有的金属元素的杂质也为0.1ppm以下的辐射线检测器。其结果,能够抑制半导体层中的晶体的异常生长。
发明的效果
根据本发明所涉及的辐射线检测器的制造方法,通过将石墨基板的炭进行纯化,能够抑制漏电流、异常漏点的产生,抑制半导体层中的晶体的异常生长。
另外,根据本发明中的辐射线检测器的制造方法,通过将石墨基板的炭进行纯化,能够实现使石墨基板的炭所含有的半导体层的施主/受主元素的杂质为0.1ppm以下的辐射线检测器。此外,能够实现使石墨基板的炭所含有的金属元素的杂质也为0.1ppm以下的辐射线检测器。
附图说明
图1为示出实施例所涉及的辐射线检测器的石墨基板侧的构成的纵截面图。
图2为示出实施例所涉及的辐射线检测器的读取基板侧的构成的纵截面图。
图3为示出读取基板以及外围电路的构成的电路图。
图4为将实施例所涉及的石墨基板侧的构成与读取基板侧的构成贴合时的纵截面图。
图5为在真空中加热由炭形成的石墨基板时的示意图。
图6为在供给气体的状态下加热由炭形成的石墨基板时的示意图。
实施例
以下,参照附图对本发明的实施例进行说明。
图1为示出实施例所涉及的辐射线检测器的石墨基板侧的构成的纵截面图,图2为示出实施例所涉及的辐射线检测器的读取基板侧的构成的纵截面图,图3为示出读取基板以及外围电路的构成的电路图,图4为将实施例所涉及的石墨基板侧的构成与读取基板侧的构成贴合时的纵截面图。
辐射线检测器如图1~图4所示那样大致分为石墨基板11和读取基板21。如图1、图4所示那样在石墨基板11上按电子阻挡层12、半导体层13、空穴阻挡层14的顺序层叠形成。如图2、图4所示那样在读取基板21上具有后述的像素电极22,并图案形成有电容器23、薄膜晶体管24等(在图2中仅图示读取基板21、像素电极22)。石墨基板11相当于本发明中的石墨基板,半导体层13相当于本发明中的半导体层。
如图1所示那样石墨基板11兼用作支承基板和电压施加电极。即,通过对半导体层13施加偏置电压(在实施例中为-0.1V/μm~1V/μm的负的偏置电压),以兼用作支承基板和电压施加电极的石墨基板11构筑了本实施例所涉及的辐射线检测器。石墨基板11由导电性碳石墨的板材形成,使用将烧成条件调整成与半导体层13的热膨胀系数一致而得到的平坦的板材(厚度约2mm)。
半导体层13因辐射线(例如X射线)的入射而将辐射线的信息转换成电荷信息(载流子)。关于半导体层13,使用以CdTe(碲化镉)或CdZnTe(碲化镉锌)形成的多晶膜。此外,关于这些半导体层13的热膨胀系数,CdTe为约5ppm/deg,CdZnTe依据Zn浓度取它们的中间值。
关于电子阻挡层12,使用ZnTe、Sb2S3、Sb2Te3等的P型半导体,关于空穴阻挡层14,使用CdS、ZnS、ZnO、Sb2S3等的N型或者超高电阻半导体。此外,在图1、图4中连续地形成空穴阻挡层14,但在空穴阻挡层14的膜电阻低的情况下,可以与像素电极22对应地分开形成。此外,在与像素电极22对应地分开形成空穴阻挡层14的情况下,在将石墨基板11与读取基板21贴合时,需要使空穴阻挡层14与像素电极22的位置对准。另外,如果辐射线检测器在特性上没有问题,则可以省略电子阻挡层12、空穴阻挡层14中的任一方或者两者。
如图2所示那样读取基板21在后述的电容器23的电容电极23a(参考图4)的位置处(像素区域),通过导电性材料(导电糊剂,各向异性导电性膜(ACF),各向异性导电性糊剂等)在与石墨基板11贴合时进行凸点连接,由此在该位置处形成像素电极22。这样按照每个像素形成像素电极22,读取在半导体层13中转换得到的载流子。关于读取基板21,使用玻璃基板。
如图3所示那样读取基板21按每个像素分开地图案形成作为电荷蓄积电容的电容器23和作为开关元件的薄膜晶体管24。此外,在图3中,仅示出了3×3像素,实际上使用与二维辐射线检测器的像素数相匹配的尺寸(例如1024×1024像素)的读取基板21。
如图4所示那样在读取基板21的表面层叠形成电容器23的电容电极23a和薄膜晶体管24的栅电极24a,并用绝缘层25覆盖。在该绝缘层25上,以隔着绝缘层25与电容电极23a相对的方式层叠形成电容器23的基准电极23b,层叠形成薄膜晶体管24的源电极24b以及漏电极24c,除了像素电极22的连接部分之外的部分用绝缘层26覆盖。此外,电容电极23a与源电极24b互相电连接。如图4那样将电容电极23a以及源电极24b一体地同时形成即可。基准电极23b接地。关于绝缘层25、26,使用例如等离子体SiN。
如图3所示那样栅极线27与图4中示出的薄膜晶体管24的栅电极24a电连接,数据线28与图4中示出的薄膜晶体管24的漏电极24c电连接。栅极线27沿各个像素的行方向分别延伸,数据线28沿各个像素的列方向分别延伸。栅极线27与数据线28互相正交。使用半导体薄膜制造技术、微细加工技术在由玻璃基板形成的读取基板21的表面,图案形成包括这些栅极线27、数据线28在内的电容器23、薄膜晶体管24、绝缘层25、26。
此外,如图3所示那样在读取基板21的周围具备栅极驱动电路29和读取电路30。栅极驱动电路29与沿各行延伸的栅极线27分别电连接,依次驱动各行的像素。读取电路30与沿各列延伸的数据线28分别电连接,经由数据线28读取各像素的载流子。这些栅极驱动电路29以及读取电路30用硅等的半导体集成电路构成,经由各向异性导电性膜(ACF)等分别与栅极线27、数据线28电连接。
接着,对上述的辐射线检测器的具体的制造方法进行说明。图5为在真空中加热由炭形成的石墨基板时的示意图,图6为在供给气体的状态下加热由炭形成的石墨基板时的示意图。
作为石墨基板11,基于容易比较便宜地获得的人工或天然的石墨(graphite)而形成,含有各种杂质。当石墨基板11中的杂质中的针对CdTe、CdZnTe的施主/受主元素在半导体层13的成膜过程中借助热扩散混入CdTe、CdZnTe膜时,对膜特性有较大影响。关于针对CdTe、CdZnTe的施主/受主元素,已知下述的元素。
Cd位点的施主:铝(Al)、镓(Ga)、铟(In),Cd位点的受主:锂(Li)、钠(Na)、铜(Cu)、银(Ag)、金(Au),Te位点的施主:氟(F)、氯(Cl)、溴(Br)、碘(I),Te位点的受主:氮(N)、磷(P)、砷(As)、锑(Sb)(关于施主、受主的文献:Acceptor states in CdTe and comparison with ZnTe.E.molva et al.1984、Shallow donoes in CdTe.L.M.Francou et al.1990等)。
这些元素由于使CdTe、CdZnTe的2族-6族半导体膜产生过量的电子、空穴,因此即使是微量的混入也会使膜低电阻化。另外,由于它们的混入会形成不想要的pn结,在电流-电压特性上产生异常。根据各种文献等,在1015cm-3以上的杂质浓度下CdTe、CdZnTe的p型化、n型化会显著产生。
这些结果,导致漏电流整体増加、或形成漏电流局部极端多的异常漏点。其结果,导致作为辐射线检测器的SN比降低,或在将辐射线检测器适用于图像的情况下产生图像缺陷。
另外,在施主/受主以外的元素中,镁(Mg)、钙(Ca)、铁(Fe)、Co(钴)、镍(Ni)、钛(Ti)是比较常见的金属元素,也有可能混入到石墨基板11中。从石墨基板11混入到CdTe、CdZnTe膜的金属元素在成膜中的晶体生长过程中形成晶核,引起晶体的异常生长,阻碍膜特性的均质化。
因此,为了避开这些影响,将石墨基板11的炭进行纯化,来将石墨基板11的表面以及内部的上述各种杂质控制在0.1ppm以下。为了将石墨基板11的炭进行纯化,通过图5或者图6中示出的方法加热炭。
在图5的情况下,在腔室31内收纳石墨基板11并通过泵P进行真空抽吸。接着,通过在真空中加热炭使炭中的杂质蒸发从而将炭进行纯化。加热温度为1000℃左右。
在图6的情况下,将石墨基板11收纳在腔室32内,向腔室32内供给气体G。作为气体G,优选不与石墨基板11反应的非活性气体,使用稀有气体(He、Ne、Ar)、氮(N2)等。接着,通过在供给气体G的状态下加热炭来将炭进行纯化。加热温度为2000℃以上。
借助图5或者图6中示出的方法加热炭,由此将炭进行纯化。通过该纯化,将石墨基板11的表面和内部的各种杂质控制在0.1ppm以下。将阈值设为0.1ppm以下表示处于基于作为微量分析法的电感耦合等离子体原子发射光谱分析法、原子吸收光谱法、吸光光度法、二次离子质量分析法的测量限界以下。能够通过图5或者图6中示出的方法,来将杂质抑制在测量限界以下的0.1ppm以下。
接着,通过升华法、蒸镀法、溅射法、化学析出法或者电析法等在纯化后的石墨基板11上层叠形成电子阻挡层12。
通过升华法将作为转换层的半导体层13层叠形成在电子阻挡层12上。在本实施例1中,为了作为几十keV~几百keV的能量的X射线检测器来使用,通过近空间升华法形成厚度约300μm的含有几mol%~几十mol%左右的锌(Zn)的CdZnTe膜来作为半导体层13。毋庸置疑,可以形成不含Zn的CdTe膜作为半导体层13。另外,关于半导体层13的形成,不限定于升华法,可以为MOCVD法,或者涂布含有CdTe或CdZnTe的糊剂来形成以CdTe或CdZnTe形成的多晶膜的半导体层13。借助研磨或者通过吹送砂等研磨剂来进行喷射加工的喷砂加工等,进行半导体层13的平坦化处理。
接着,通过升华法、蒸镀法、溅射法、化学析出法或者电析法等在平坦化了的半导体层13上层叠形成空穴阻挡层14。
接着,如图4所示那样以半导体层13和像素电极22在内侧贴合的方式将层叠形成有半导体层13的石墨基板11与读取基板21贴合。如上所述,在未用绝缘层26覆盖的位置处,通过导电性材料(导电糊剂、各向异性导电性膜(ACF)、各向异性导电性糊剂等)对电容电极23a的位置进行凸点连接,由此在该位置处形成像素电极22,将石墨基板11和读取基板21贴合。
根据具备上述的构成的本实施例所涉及的辐射线检测器的制造方法,通过将石墨基板11的炭进行纯化,能够抑制石墨基板11的炭所含有的半导体层13的施主/受主元素、以及金属元素的杂质。其结果,还能够抑制从石墨基板11侧扩散至半导体层13的杂质(施主/受主元素、金属元素)。因而,能够抑制由半导体层13中掺杂的施主/受主元素引起的漏电流、异常漏点的产生,抑制由半导体层13中掺杂的金属元素引起的半导体层13中的晶体的异常生长。
在本实施例中,通过加热炭来将炭进行纯化。在本实施例的情况下,能够将石墨基板11中的杂质通过加热除去。作为加热的一例,如图5所示那样通过在真空中加热炭使炭中的杂质蒸发从而将炭进行纯化。或者,作为加热的另一例,如图6所示那样通过在供给气体G的状态下加热炭来将炭进行纯化。
另外,根据本实施例所涉及的辐射线检测器的制造方法,通过将石墨基板11的炭进行纯化,能够实现使石墨基板11的炭所含有的半导体层13的施主/受主元素的杂质为0.1ppm以下的辐射线检测器。其结果,能够抑制漏电流、异常漏点的产生。
在本实施例中,炭所含有的金属元素的杂质优选为0.1ppm以下。当半导体层13中掺杂有金属元素时有可能形成晶核,从而引起半导体层13中的晶体的异常生长。而且,通过将石墨基板11的炭进行纯化,能够实现使石墨基板11的炭所含有的金属元素的杂质也为0.1ppm以下的辐射线检测器。其结果,能够抑制半导体层13中的晶体的异常生长。
本发明不限于上述实施方式,可以如下述那样变形实施。
(1)在上述的实施例中,举例X射线作为辐射线进行了说明,但作为X射线以外的辐射线,可例示γ射线、光等,这样没有特别限定。
(2)在上述的实施例中,通过加热炭来将炭进行纯化,但也可以将石墨基板的表面的杂质通过洗涤除去。另外,也可以将加热炭的实施例与洗涤炭的该变形例两者组合。
附图标记说明
11…石墨基板
13…半导体层
G…气体
Claims (15)
1.一种辐射线检测器的制造方法,其特征在于,其为制造具备半导体层和电压施加电极用的石墨基板的辐射线检测器的方法,其中,所述半导体层因辐射线的入射而将辐射线的信息转换成为电荷信息,且由碲化镉CdTe或碲化镉锌CdZnTe来形成;所述电压施加电极用的石墨基板对该半导体层施加偏置电压,且兼用作支承基板,
将作为前述石墨基板的主构成元素的炭进行纯化,
前述石墨基板的炭所含有的前述半导体层的施主/受主元素的杂质为0.1ppm以下。
2.根据权利要求1所述的辐射线检测器的制造方法,其特征在于,通过加热前述炭来将前述炭进行纯化。
3.根据权利要求2所述的辐射线检测器的制造方法,其特征在于,通过在真空中加热前述炭使炭中的杂质蒸发来将炭进行纯化。
4.根据权利要求2所述的辐射线检测器的制造方法,其特征在于,通过在供给气体的状态下加热前述炭来将前述炭进行纯化。
5.根据权利要求1所述的辐射线检测器的制造方法,其特征在于,通过洗涤前述炭来将前述炭进行纯化。
6.根据权利要求1所述的辐射线检测器的制造方法,其特征在于,通过加热前述炭并洗涤该炭来将该炭进行纯化。
7.根据权利要求6所述的辐射线检测器的制造方法,其特征在于,通过在真空中加热前述炭使炭中的杂质蒸发来将炭进行纯化。
8.根据权利要求6所述的辐射线检测器的制造方法,其特征在于,通过在供给气体的状态下加热前述炭来将前述炭进行纯化。
9.一种辐射线检测器,其特征在于,其为具备半导体层和电压施加电极用的石墨基板的辐射线检测器,其中,所述半导体层因辐射线的入射而将辐射线的信息转换成为电荷信息,且由碲化镉CdTe或碲化镉锌CdZnTe来形成;所述电压施加电极用的石墨基板对该半导体层施加偏置电压,且兼用作支承基板,
前述石墨基板的炭所含有的前述半导体层的施主/受主元素的杂质为0.1ppm以下。
10.根据权利要求9所述的辐射线检测器,其特征在于,
镉Cd位点的施主为铝Al、镓Ga、铟In,
铝Al、镓Ga、铟In为0.1ppm以下。
11.根据权利要求9所述的辐射线检测器,其特征在于,
镉Cd位点的受主为锂Li、钠Na、铜Cu、银Ag、金Au,
锂Li、钠Na、铜Cu、银Ag、金Au为0.1ppm以下。
12.根据权利要求9所述的辐射线检测器,其特征在于,
碲Te位点的施主为氟F、氯Cl、溴Br、碘I,
氟F、氯Cl、溴Br、碘I为0.1ppm以下。
13.根据权利要求9所述的辐射线检测器,其特征在于,
碲Te位点的受主为氮N、磷P、砷As、锑Sb,
氮N、磷P、砷As、锑Sb为0.1ppm以下。
14.根据权利要求9~13中的任一项所述的辐射线检测器,其特征在于,前述炭所含有的金属元素的杂质为0.1ppm以下。
15.根据权利要求14所述的辐射线检测器,其特征在于,
前述金属元素为镁Mg、钙Ca、铁Fe、钴Co、镍Ni、钛Ti,
镁Mg、钙Ca、铁Fe、钴Co、镍Ni、钛Ti为0.1ppm以下。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-081785 | 2011-04-01 | ||
JP2011081785 | 2011-04-01 | ||
PCT/JP2012/001894 WO2012137429A1 (ja) | 2011-04-01 | 2012-03-19 | 放射線検出器の製造方法および放射線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103443653A CN103443653A (zh) | 2013-12-11 |
CN103443653B true CN103443653B (zh) | 2015-09-23 |
Family
ID=46968845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280014189.9A Expired - Fee Related CN103443653B (zh) | 2011-04-01 | 2012-03-19 | 辐射线检测器的制造方法以及辐射线检测器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140246744A1 (zh) |
JP (1) | JP5621919B2 (zh) |
KR (1) | KR101540527B1 (zh) |
CN (1) | CN103443653B (zh) |
WO (1) | WO2012137429A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6725212B2 (ja) * | 2015-04-17 | 2020-07-15 | Jx金属株式会社 | CdTe系化合物半導体及びそれを用いた放射線検出素子 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1318654A (zh) * | 2000-04-20 | 2001-10-24 | 中南工业大学 | 高温氯化物熔盐电解阳极及制备方法 |
CN101517751A (zh) * | 2006-09-14 | 2009-08-26 | 株式会社岛津制作所 | 光或放射线检测器的制造方法及光或放射线检测器 |
CN101952966A (zh) * | 2008-02-12 | 2011-01-19 | 株式会社岛津制作所 | 放射线检测器的制造方法、放射线检测器以及放射线摄像装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2229229A1 (de) * | 1972-06-15 | 1974-01-10 | Siemens Ag | Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern |
US5273911A (en) * | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
JP3242452B2 (ja) * | 1992-06-19 | 2001-12-25 | 三菱電機株式会社 | 薄膜太陽電池の製造方法 |
US5449531A (en) * | 1992-11-09 | 1995-09-12 | North Carolina State University | Method of fabricating oriented diamond films on nondiamond substrates and related structures |
JPH08236799A (ja) * | 1995-02-24 | 1996-09-13 | Fuji Electric Co Ltd | 半導体放射線検出素子および整流素子 |
JP3447492B2 (ja) * | 1996-11-12 | 2003-09-16 | 日本電気株式会社 | 炭素材料とその製造方法 |
WO1999066345A1 (fr) * | 1998-06-18 | 1999-12-23 | Hamamatsu Photonics K.K. | Panneau de scintillateur et capteur d'image de rayonnement |
JP4105686B2 (ja) * | 2002-05-30 | 2008-06-25 | 独立行政法人科学技術振興機構 | 内殻電子励起によりグラファイトからダイヤモンドを製造する方法 |
JP2005012049A (ja) * | 2003-06-20 | 2005-01-13 | Shimadzu Corp | 放射線検出器およびそれを備えた放射線撮像装置 |
EP2077344B1 (de) * | 2007-12-21 | 2010-11-03 | Condias Gmbh | Verfahren zur Aufbringung einer Diamantschicht auf ein Graphitsubstrat |
JP5194862B2 (ja) * | 2008-02-12 | 2013-05-08 | 株式会社島津製作所 | 二次元画像検出器 |
KR101244027B1 (ko) * | 2008-07-08 | 2013-03-14 | 시너스 테크놀리지, 인코포레이티드 | 플렉서블 태양전지 제조방법 |
US20100218801A1 (en) * | 2008-07-08 | 2010-09-02 | Chien-Min Sung | Graphene and Hexagonal Boron Nitride Planes and Associated Methods |
CN102460215B (zh) * | 2009-04-03 | 2014-02-26 | 株式会社岛津制作所 | 放射线检测器的制造方法、放射线检测器以及放射线摄像装置 |
US8476660B2 (en) * | 2009-08-20 | 2013-07-02 | Integrated Photovoltaics, Inc. | Photovoltaic cell on substrate |
JP2011057474A (ja) * | 2009-09-07 | 2011-03-24 | Univ Of Tokyo | 半導体基板、半導体基板の製造方法、半導体成長用基板、半導体成長用基板の製造方法、半導体素子、発光素子、表示パネル、電子素子、太陽電池素子及び電子機器 |
US8927057B2 (en) * | 2010-02-22 | 2015-01-06 | International Business Machines Corporation | Graphene formation utilizing solid phase carbon sources |
EP2557597A4 (en) * | 2010-04-07 | 2014-11-26 | Shimadzu Corp | RADIATION DETECTOR AND METHOD FOR MANUFACTURING SAME |
US20130112669A1 (en) * | 2011-11-08 | 2013-05-09 | Takashi Uemura | Heat treatment apparatus |
-
2012
- 2012-03-19 US US14/009,210 patent/US20140246744A1/en not_active Abandoned
- 2012-03-19 CN CN201280014189.9A patent/CN103443653B/zh not_active Expired - Fee Related
- 2012-03-19 JP JP2013508738A patent/JP5621919B2/ja not_active Expired - Fee Related
- 2012-03-19 WO PCT/JP2012/001894 patent/WO2012137429A1/ja active Application Filing
- 2012-03-19 KR KR1020137015968A patent/KR101540527B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1318654A (zh) * | 2000-04-20 | 2001-10-24 | 中南工业大学 | 高温氯化物熔盐电解阳极及制备方法 |
CN101517751A (zh) * | 2006-09-14 | 2009-08-26 | 株式会社岛津制作所 | 光或放射线检测器的制造方法及光或放射线检测器 |
CN101952966A (zh) * | 2008-02-12 | 2011-01-19 | 株式会社岛津制作所 | 放射线检测器的制造方法、放射线检测器以及放射线摄像装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20130098408A (ko) | 2013-09-04 |
KR101540527B1 (ko) | 2015-07-29 |
CN103443653A (zh) | 2013-12-11 |
US20140246744A1 (en) | 2014-09-04 |
JPWO2012137429A1 (ja) | 2014-07-28 |
JP5621919B2 (ja) | 2014-11-12 |
WO2012137429A1 (ja) | 2012-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kakavelakis et al. | Metal halide perovskites for high‐energy radiation detection | |
JP7122430B2 (ja) | 撮像装置 | |
Li et al. | Rubidium doping to enhance carrier transport in CsPbBr3 single crystals for high-performance X-ray detection | |
US9985150B2 (en) | Radiation detector and method of manufacturing the same | |
US20180013010A1 (en) | Imaging Device and Electronic Device | |
CN101517751B (zh) | 光或放射线检测器的制造方法及光或放射线检测器 | |
Yamada et al. | Low‐temperature fabrication and performance of polycrystalline CuI films as transparent p‐type semiconductors | |
CN102738260B (zh) | 光电二极管、光感测组件及光电二极管的制造方法 | |
CN101952966B (zh) | 放射线检测器的制造方法、放射线检测器以及放射线摄像装置 | |
JP2022118034A (ja) | 撮像装置 | |
Jeong et al. | Roadmap on halide perovskite and related devices | |
CN104854710B (zh) | 具有motft的像素化成像器和工艺 | |
JP2023073250A (ja) | 撮像装置 | |
Seok et al. | Zno: Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells | |
Lee et al. | Direct thermal growth of large scale Cl-doped CdTe film for low voltage high resolution X-ray image sensor | |
WO2005109527A1 (ja) | 放射線検出器 | |
CN106663685A (zh) | 半导体装置及其制造方法 | |
KR101312888B1 (ko) | 방사선 검출기의 제조 방법 및 방사선 검출기 및 방사선 촬상 장치 | |
US8232531B2 (en) | Corrosion barrier layer for photoconductive X-ray imagers | |
CN103443653B (zh) | 辐射线检测器的制造方法以及辐射线检测器 | |
US8871552B2 (en) | Method of manufacturing radiation detector | |
WO2015163288A1 (ja) | 光検出装置 | |
Gedda et al. | Metal Halide Perovskites for High-Energy Radiation Detection | |
JP2007235039A (ja) | 放射線検出器の製造方法 | |
Park et al. | Fabrication of CZT planar-type detectors and comparison of their performance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150923 Termination date: 20200319 |
|
CF01 | Termination of patent right due to non-payment of annual fee |