JP4935543B2 - 電源一体型パッケージ基板 - Google Patents
電源一体型パッケージ基板 Download PDFInfo
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- JP4935543B2 JP4935543B2 JP2007177205A JP2007177205A JP4935543B2 JP 4935543 B2 JP4935543 B2 JP 4935543B2 JP 2007177205 A JP2007177205 A JP 2007177205A JP 2007177205 A JP2007177205 A JP 2007177205A JP 4935543 B2 JP4935543 B2 JP 4935543B2
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- 239000000758 substrate Substances 0.000 claims description 59
- 239000003990 capacitor Substances 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 15
- 238000009499 grossing Methods 0.000 claims description 8
- 239000000696 magnetic material Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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Description
前記電源が、スイッチング素子、コントロールIC、及び、該スイッチング素子の出力を平滑化するインダクタ並びにキャパシタからなるフィルタを有し、
前記インダクタが、表面に磁性層を施した導体線から成り、該インダクタを複数本並列に配列し、樹脂で固定してなる小型低背インダクタアレーを備えることより、電源の小型化を実現したことを主たる特徴とする。
本発明の第1実施形態に掛かる電源一体型パッケージ基板について図1〜図7を参照して説明する。図1は、第1実施形態に係る電源一体型パッケージ基板の断面図であり、図2は、図1の電源一体型パッケージ基板のA矢視、即ち、底面図である。
電源一体型パッケージ基板90は、パッケージ基板30に電源モジュール50を内蔵して成る。パッケージ基板30には、バンプ32を介してIC(負荷)40が搭載されている。該IC(負荷)40の上側には、放熱用のヒートシンク44が載置されている。パッケージ基板30の底面外周側には、図示しないマザーボードへの接続用のピン36を備えるピンソケット34が配置されている。
図7(B)に示すように、電源モジュール50の入力側には、一定の電圧Vin・電流Iinが供給される。スイッチSを図7(C)に示すように周期Tの内のton時間オンすることで、図7(C)に示すように出力電圧Voutを降圧し、出力電流Ioutを平均電流Iavgにする。出力電圧Voutには電圧リプル分Vrippleが含まれる。同様に、出力電流にも電流変動Δiが含まれる。この出力ノイズ(電圧リプル分Vripple、電流変動Δi)をIC(負荷)40側の要求する許容値内にするために、平滑フィルタを構成するインダクタL及びキャパシタCの値が設定される。
図4(C)に示すようにインダクタアレー70は、直径69μmの銅線74Cの外周に厚さ10μmの絶縁層74Aを設け、該絶縁層74Aの外周に厚さ10μmの磁性層74Bを設けてなる。該磁性層74Bは、比透磁率600以上、飽和磁化1.6T以上(好ましくは2T以上)の主としてFe、Co、Niの内の少なくとも2以上を主成分とする磁性体(磁性鍍金)からなり、導線74Cに電解めっき又は無電解めっき(湿式電気めっき)により施されてなる。ここでは、導線として、銅線を用いたが、この代わりに、アルミニュウム線、銀線を用いることも可能である。
1個の電流制御ICチップ82により、3組のスイッチング回路84a、84b、84cが制御される。スイッチング回路84aは、スイッチング素子S1、S2を備え、図4を参照して上述したインダクタ74と、図3を参照して上述した誘電体層16を下部電極層14及び上部電極層18で挟持して成るキャパシタCとに接続されている。同様に、スイッチング回路84bは、スイッチング素子S3、S4を備え、インダクタ74とキャパシタCとに接続され、スイッチング回路84cは、スイッチング素子S5、S6を備え、インダクタ74とキャパシタCとに接続されている。電流制御ICチップ82は、3組のスイッチング回路84a、84b、84cを時分割式に制御し、3Vの入力電圧を1.1Vの電圧に変換し、9Aの電流を出力し得る。第1実施形態では、10組の電流制御ICチップ82及びスイッチング回路84a、84b、84cによって、1.1Vの電圧で90Aの電流(約100W)をCPU(ICチップ)40側へ供給できるように構成されている。
第2実施形態では、直径250μmの銅線に10μmの絶縁被覆を施した線材を12mmに切り揃え、両端1mmの絶縁層を剥離した後に、NiFeCoの電析による磁性膜を10μmの厚さで堆積させた。このNiFeCoを主成分とする磁性膜は、比透磁率約600、飽和磁化は2T程度であった。
第3実施形態の電源一体型パッケージ基板は、第2実施形態と同様のインダクタアレー70を作製し、図9に示すようにパッケージ基板30のコア120内部に電源半導体と重ねる形で実装した基板コア内蔵型電源である。第3実施形態は、第1実装形態と比較して、より電源と負荷の距離が短くなっているという長所がある。
第4実施形態では、第2実施形態と同様に直径250μmの銅線に10μmの絶縁被覆を施した線材を、第2実施形態の1/10の長さである1.2mmに切り揃え、第2実施形態と同様にNiFeCoの電析による磁性膜を10μmの厚さで堆積させた。NiFeCoを主成分とする磁性膜は、第2実施形態と同じく比透磁率約600、飽和磁化は2T程度であった。
14 下部電極層
16 誘電体層
18 上部電極層
30 電源一体型パッケージ基板
40 ICチップ(負荷)
50 電源モジュール
52 給電線
60 再配線層
70 インダクタ層(インダクタアレー)
72 樹脂
74 インダクタ
74C 銅線
74A 絶縁層
80 スイッチング素子層
90 電源一体型パッケージ基板
120 コア基板
S1、S2 スイッチング素子
C キャパシタ
Claims (7)
- ICを搭載し、該ICに電力を供給する電源を一体で備え、
前記電源が、スイッチング素子、コントロールIC、及び、該スイッチング素子の出力を平滑化するインダクタ並びにキャパシタからなるフィルタを有し、
前記インダクタが、表面に磁性層を施した導体線から成り、該インダクタを複数本並行に配列し、樹脂で固定してなるインダクタアレーを備える電源一体型パッケージ基板であって、
前記電源が、複数個の前記スイッチング素子及びフィルタから成り、
前記複数個が、必要とされる電流量を給電線の許容電流値で割った数分であることを特徴とする電源一体型パッケージ基板。 - ICを搭載し、該ICに電力を供給する電源を一体で備え、
前記電源が、スイッチング素子、コントロールIC、及び、該スイッチング素子の出力を平滑化するインダクタ並びにキャパシタからなるフィルタを有し、
前記インダクタが、表面に磁性層を施した導体線から成り、該インダクタを複数本並行に配列し、樹脂で固定してなるインダクタアレーを備える電源一体型パッケージ基板であって、
前記キャパシタが、前記パッケージ基板に形成させたスルーホールの側壁に設けられた誘電体を挟持する電極層から成ることを特徴とする電源一体型パッケージ基板。 - 前記インダクタアレーが、パッケージ基板を介在させた負荷ICの直下に配置されることを特徴とする請求項2の電源一体型パッケージ基板。
- 前記磁性層は湿式電気めっきにより施されてなることを特徴とする請求項1又は請求項2の電源一体型パッケージ基板。
- 前記磁性層は、Fe、Co、Niの内の少なくとも2以上を主成分とする磁性体であることを特徴とする請求項1又は請求項2の電源一体型パッケージ基板。
- 前記樹脂は、磁性材料を含むことを特徴とする請求項1又は請求項2の電源一体型パッケージ基板。
- ICを搭載し、該ICに電力を供給する電源を一体で備え、
前記電源が、スイッチング素子、コントロールIC、及び、該スイッチング素子の出力を平滑化するインダクタ並びにキャパシタからなるフィルタを有し、
前記インダクタが、表面に磁性層を施した導体線から成り、該インダクタを複数本並行に配列し、樹脂で固定してなるインダクタアレーを備える電源一体型パッケージ基板であって、
前記電源は、コア基板内に収容されていることを特徴とする電源一体型パッケージ基板。
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