JP4919530B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4919530B2
JP4919530B2 JP2000242575A JP2000242575A JP4919530B2 JP 4919530 B2 JP4919530 B2 JP 4919530B2 JP 2000242575 A JP2000242575 A JP 2000242575A JP 2000242575 A JP2000242575 A JP 2000242575A JP 4919530 B2 JP4919530 B2 JP 4919530B2
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Japan
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region
island
semiconductor layer
film
laser light
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Expired - Fee Related
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JP2000242575A
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Japanese (ja)
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JP2001127304A5 (enExample
JP2001127304A (ja
Inventor
健司 笠原
律子 河崎
久 大谷
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000242575A priority Critical patent/JP4919530B2/ja
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Publication of JP2001127304A5 publication Critical patent/JP2001127304A5/ja
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Publication of JP4919530B2 publication Critical patent/JP4919530B2/ja
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  • Recrystallisation Techniques (AREA)
JP2000242575A 1999-08-18 2000-08-10 半導体装置の作製方法 Expired - Fee Related JP4919530B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000242575A JP4919530B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11-231165 1999-08-18
JP23116599 1999-08-18
JP1999231165 1999-08-18
JP2000242575A JP4919530B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

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JP2001127304A JP2001127304A (ja) 2001-05-11
JP2001127304A5 JP2001127304A5 (enExample) 2007-09-06
JP4919530B2 true JP4919530B2 (ja) 2012-04-18

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JP2000242575A Expired - Fee Related JP4919530B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置
KR101484296B1 (ko) 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작방법
CN104282539A (zh) * 2013-07-04 2015-01-14 上海和辉光电有限公司 一种多晶硅制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JPH09260676A (ja) * 1996-03-26 1997-10-03 Sharp Corp 薄膜トランジスタの製造方法
JP3343492B2 (ja) * 1997-04-02 2002-11-11 シャープ株式会社 薄膜半導体装置の製造方法

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JP2001127304A (ja) 2001-05-11

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