JP4914010B2 - 半導体光センサ - Google Patents
半導体光センサ Download PDFInfo
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- JP4914010B2 JP4914010B2 JP2005012885A JP2005012885A JP4914010B2 JP 4914010 B2 JP4914010 B2 JP 4914010B2 JP 2005012885 A JP2005012885 A JP 2005012885A JP 2005012885 A JP2005012885 A JP 2005012885A JP 4914010 B2 JP4914010 B2 JP 4914010B2
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- Prior art keywords
- light
- boride
- semiconductor
- fine particles
- optical sensor
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 230000003287 optical effect Effects 0.000 title claims description 22
- 229920005989 resin Polymers 0.000 claims description 54
- 239000011347 resin Substances 0.000 claims description 54
- 239000010419 fine particle Substances 0.000 claims description 42
- 230000035945 sensitivity Effects 0.000 claims description 27
- 230000003595 spectral effect Effects 0.000 claims description 21
- 229910052746 lanthanum Inorganic materials 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron Yttrium bromide Chemical compound 0.000 description 1
- LAROCDZIZGIQGR-UHFFFAOYSA-N boron;vanadium Chemical compound B#[V]#B LAROCDZIZGIQGR-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
11:基板、12:半導体受光素子、13:金線、14:第1光透過樹脂、15:第2光透過樹脂(ホウ化物微粒子分散)
21:基板、22:半導体受光素子、23:金線、24:光透過樹脂(ホウ化物微粒子分散)、25:リードである、26:第1光透過樹脂、27:第2光透過樹脂(ホウ化物微粒子分散)
Claims (2)
- 少なくとも可視光域から赤外域にかけての波長に高い分光感度を有する半導体受光素子と、該半導体受光素子の少なくとも受光面側を封止する光透過樹脂とを含む半導体光センサにおいて、
前記光透過樹脂は、La、Pr、Nd、Ce、Y、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、又はWの内から選択された1又は2以上の元素のホウ化物であって且つ粒径がほぼ100nmを超えない微粒子を透明樹脂内に分散したものであり、
前記半導体受光素子は、シリコン、ガリウム砒素、又はインジウム燐のいずれかからなり、ほぼ400nm〜1100nmの波長域に高い分光感度を持ち、前記光透過樹脂によってその内のほぼ700nm以上の波長域の光が遮断され、分光感度特性が比視感度特性に近づけられたことを特徴とする半導体光センサ。 - 請求項1に記載の半導体光センサにおいて、
前記ホウ化物に代えて、あるいは前記ホウ化物に加えて、粒径がほぼ100nmを超えない酸化ルテニウムおよび/又は酸化イリジウムの微粒子を用いることを特徴とする半導体光センサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005012885A JP4914010B2 (ja) | 2005-01-20 | 2005-01-20 | 半導体光センサ |
US11/332,205 US7579698B2 (en) | 2005-01-20 | 2006-01-17 | Photodetector sealing resin is a boride or an oxide of micro particles |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005012885A JP4914010B2 (ja) | 2005-01-20 | 2005-01-20 | 半導体光センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006202971A JP2006202971A (ja) | 2006-08-03 |
JP4914010B2 true JP4914010B2 (ja) | 2012-04-11 |
Family
ID=36682961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005012885A Active JP4914010B2 (ja) | 2005-01-20 | 2005-01-20 | 半導体光センサ |
Country Status (2)
Country | Link |
---|---|
US (1) | US7579698B2 (ja) |
JP (1) | JP4914010B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5100013B2 (ja) * | 2006-01-26 | 2012-12-19 | 新日本無線株式会社 | 半導体光センサ |
JP2008024789A (ja) * | 2006-07-19 | 2008-02-07 | Matsushita Electric Works Ltd | 光半導体封止用エポキシ樹脂組成物及びその製造方法 |
JP5052485B2 (ja) * | 2008-11-19 | 2012-10-17 | シャープ株式会社 | 反射型光結合装置及びこの反射型光結合装置を搭載した電子機器 |
JP2011049992A (ja) * | 2009-08-28 | 2011-03-10 | Seiko Instruments Inc | 圧電デバイス及び圧電デバイスの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3896313A (en) * | 1974-01-16 | 1975-07-22 | Westinghouse Electric Corp | Photodetector apparatus with a zero cut-off response to absolute zero at a specified light frequency |
JPH01266751A (ja) * | 1988-04-18 | 1989-10-24 | Mitsubishi Electric Corp | 光半導体装置 |
JPH0915044A (ja) | 1995-06-27 | 1997-01-17 | Matsushita Electric Works Ltd | 照度センサ |
TW345751B (en) * | 1997-08-10 | 1998-11-21 | Jenq-Shyong Shieh | Thermovoltaic generator type solid-state switch a thermovoltaic generator type solid-state switch comprises a single crystal silicon substrate; an MOS field effect transistor; etc. |
JP4058822B2 (ja) * | 1997-09-30 | 2008-03-12 | 住友金属鉱山株式会社 | 選択透過膜用塗布液、選択透過膜および選択透過多層膜 |
US6277187B1 (en) * | 1998-03-16 | 2001-08-21 | Sumitomo Metal Mining Co., Ltd. | Film for cutting off heat rays and a coating liquid for forming the same |
JP3262098B2 (ja) * | 1998-03-16 | 2002-03-04 | 住友金属鉱山株式会社 | 熱線遮蔽材料とこれを用いた熱線遮蔽器材並びに塗布液および熱線遮蔽膜 |
US6476374B1 (en) * | 2000-04-25 | 2002-11-05 | Innovative Technology Licensing, Llc | Room temperature, low-light-level visible imager |
JP2003028649A (ja) * | 2001-05-11 | 2003-01-29 | Murata Mfg Co Ltd | センサ回路モジュールおよびそれを用いた電子装置 |
US6633030B2 (en) * | 2001-08-31 | 2003-10-14 | Fiarchild Semiconductor | Surface mountable optocoupler package |
JP3937851B2 (ja) * | 2002-02-01 | 2007-06-27 | 住友金属鉱山株式会社 | プラズマディスプレイパネル用近赤外線吸収フィルター |
JP3982466B2 (ja) * | 2002-09-25 | 2007-09-26 | 住友金属鉱山株式会社 | 熱線遮蔽成分分散体とその製造方法およびこの分散体を用いて得られる熱線遮蔽膜形成用塗布液と熱線遮蔽膜並びに熱線遮蔽樹脂成形体 |
JP2004204173A (ja) * | 2002-12-26 | 2004-07-22 | Catalysts & Chem Ind Co Ltd | 赤外線遮蔽膜形成用塗料および赤外線遮蔽膜付基材 |
WO2004066398A1 (ja) * | 2003-01-20 | 2004-08-05 | Sharp Kabushiki Kaisha | 光センサフィルタ用の透明樹脂組成物、光センサおよびその製造方法 |
-
2005
- 2005-01-20 JP JP2005012885A patent/JP4914010B2/ja active Active
-
2006
- 2006-01-17 US US11/332,205 patent/US7579698B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060157727A1 (en) | 2006-07-20 |
US7579698B2 (en) | 2009-08-25 |
JP2006202971A (ja) | 2006-08-03 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |