JP4912663B2 - 単一指向性反射器及びこれを適用した発光素子 - Google Patents
単一指向性反射器及びこれを適用した発光素子 Download PDFInfo
- Publication number
- JP4912663B2 JP4912663B2 JP2005319875A JP2005319875A JP4912663B2 JP 4912663 B2 JP4912663 B2 JP 4912663B2 JP 2005319875 A JP2005319875 A JP 2005319875A JP 2005319875 A JP2005319875 A JP 2005319875A JP 4912663 B2 JP4912663 B2 JP 4912663B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- light emitting
- emitting device
- layer
- nanorods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Description
20 発光部
21 下部半導体物質層
22 活性層
23 上部半導体物質層
30 ODR
31 低屈折層
32 金属性反射層。
Claims (18)
- 透明導電性酸化物または透明導電性窒化物から形成されてなる複数の導電性ナノロッドを含み、前記導電性ナノロッドを形成する物質よりも屈折率が低い透明伝導性低屈折層と、
前記透明伝導性低屈折層と接する、金属による反射層と、
を備えることを特徴とする単一指向性反射器。 - 前記透明導電性窒化物は、TiとNとを含むことを特徴とする請求項1に記載の単一指向性反射器。
- 前記透明導電性窒化物は、TiN、TiON、またはInSnONから形成されることを特徴とする請求項2に記載の単一指向性反射器。
- 前記透明導電性酸化物は、In、SnおよびZnよりなる群から選ばれた少なくとも一つの酸化物から形成されることを特徴とする請求項1に記載の単一指向性反射器。
- 前記透明導電性酸化物は、ドーパントを含むことを特徴とする請求項4に記載の単一指向性反射器。
- 前記ドーパントは、Ga、Cd、Mg、Be、Ag、Mo、V、Cu、Ir、Rh、Ru、W、Co、Ni、Mn、Pd、Pt、およびLaよりなる群から選択された少なくとも一つであることを特徴とする請求項5に記載の単一指向性反射器。
- 前記透明伝導性低屈折層の厚さは、光のピーク波長の1/4n(n:屈折率)に比例することを特徴とする請求項1から6のいずれか1項に記載の単一指向性反射器。
- 前記反射層は、Ag、Ag2O、Al、Zn、Ti、Rh、Mg、Pd、Ru、Pt、またはIrの物質から形成されることを特徴とする請求項1から7のいずれか1項に記載の単一指向性反射器。
- 前記ナノロッドは、スパッタリングまたは電子ビームを利用した傾斜蒸着法により形成されてなることを特徴とする請求項1から8のいずれか1項に記載の単一指向性反射器。
- 活性層と上下部半導体物質層とを備える発光部と、
前記発光部の一層の半導体物質層上に形成され、
透明導電性酸化物または透明導電性窒化物から形成される複数の導電性ナノロッドを有し、
前記導電性ナノロッドを形成する物質よりも屈折率が低い透明伝導性低屈折層と、
前記透明伝導性低屈折層に接するようにその上に形成されてなる金属性反射層とを備えることを特徴とする発光素子。 - 前記透明導電性窒化物は、TiとNとを含むことを特徴とする請求項10に記載の発光素子。
- 前記透明導電性窒化物は、TiN、TiON、またはInSnONから形成されてなることを特徴とする請求項11に記載の発光素子。
- 前記透明導電性酸化物は、In、SnおよびZnよりなる群から選ばれた少なくとも一つの酸化物から形成されてなることを特徴とする請求項10に記載の発光素子。
- 前記透明導電性酸化物は、ドーパントを含むことを特徴とする請求項13に記載の発光素子。
- 前記ドーパントは、Ga、Cd、Mg、Be、Ag、Mo、V、Cu、Ir、Rh、Ru、W、Co、Ni、Mn、Pd、Pt、およびLaよりなる群から選択された少なくとも一つであることを特徴とする請求項14に記載の発光素子。
- 前記透明伝導性低屈折層の厚さは、光のピーク波長の1/4n(n:屈折率)に比例することを特徴とする請求項10から15のいずれか1項に記載の発光素子。
- 前記金属性反射層は、Ag、Ag2O、Al、Zn、Ti、Rh、Mg、Pd、Ru、Pt、またはIrの物質から形成されてなることを特徴とする請求項10から16のいずれか1項に記載の発光素子。
- 前記導電性ナノロッドは、スパッタリングまたは電子ビームを利用した傾斜蒸着法により形成されてなることを特徴とする請求項10から17のいずれか1項に記載の発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70488405P | 2005-08-03 | 2005-08-03 | |
US60/704,884 | 2005-08-03 | ||
KR1020050089473A KR20070016897A (ko) | 2005-08-03 | 2005-09-26 | 단일지향성 반사기 및 이를 적용한 발광소자 |
KR10-2005-0089473 | 2005-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007043045A JP2007043045A (ja) | 2007-02-15 |
JP4912663B2 true JP4912663B2 (ja) | 2012-04-11 |
Family
ID=37324888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005319875A Expired - Fee Related JP4912663B2 (ja) | 2005-08-03 | 2005-11-02 | 単一指向性反射器及びこれを適用した発光素子 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20070029561A1 (ja) |
EP (1) | EP1750310A3 (ja) |
JP (1) | JP4912663B2 (ja) |
CN (1) | CN1909256B (ja) |
Families Citing this family (46)
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CN102089684B (zh) * | 2008-05-15 | 2014-08-13 | 巴斯夫公司 | 薄膜结构的制造方法及其组合物 |
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2005
- 2005-10-26 EP EP05256634A patent/EP1750310A3/en not_active Withdrawn
- 2005-11-02 JP JP2005319875A patent/JP4912663B2/ja not_active Expired - Fee Related
- 2005-11-10 CN CN2005101204219A patent/CN1909256B/zh not_active Expired - Fee Related
- 2005-11-14 US US11/271,970 patent/US20070029561A1/en not_active Abandoned
-
2010
- 2010-03-10 US US12/721,132 patent/US20100166983A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1750310A2 (en) | 2007-02-07 |
US20070029561A1 (en) | 2007-02-08 |
JP2007043045A (ja) | 2007-02-15 |
EP1750310A3 (en) | 2009-07-15 |
US20100166983A1 (en) | 2010-07-01 |
CN1909256B (zh) | 2012-10-03 |
CN1909256A (zh) | 2007-02-07 |
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