JP4902712B2 - アトムプローブ分析方法 - Google Patents
アトムプローブ分析方法 Download PDFInfo
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- JP4902712B2 JP4902712B2 JP2009220844A JP2009220844A JP4902712B2 JP 4902712 B2 JP4902712 B2 JP 4902712B2 JP 2009220844 A JP2009220844 A JP 2009220844A JP 2009220844 A JP2009220844 A JP 2009220844A JP 4902712 B2 JP4902712 B2 JP 4902712B2
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- 239000000523 sample Substances 0.000 title claims description 138
- 238000004458 analytical method Methods 0.000 title claims description 23
- 230000005684 electric field Effects 0.000 claims description 39
- 238000001704 evaporation Methods 0.000 claims description 31
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- 150000002500 ions Chemical class 0.000 claims description 26
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- 238000009826 distribution Methods 0.000 claims description 7
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- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
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- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- TVZDIFFVBBTTIJ-UHFFFAOYSA-N aspirin-based probe AP Chemical compound CC(=O)Oc1ccccc1C(=O)Oc1ccc(F)cc1-c1nc2ccccc2s1 TVZDIFFVBBTTIJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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Images
Description
1a… 針状試料
2… 試料固定基板
3… プローブ
4、4a、4b… 保護膜
5… 仮固定部
6… 本固定部
Claims (2)
- 多層構造の各層のそれぞれの界面の方向が針の長手方向に平行となる針先形状の試料の前記各層の端部に電界を印加し、前記試料から蒸発したイオンがスクリーンに到達した位置を検出し、前記試料を構成する元素の分布について分析するアトムプローブ分析方法において、
前記各層の端部を電界蒸発させるために前記端部に印加する電界強度を徐々に上げる工程と、
前記端部から蒸発した前記イオンが前記スクリーンに到達した位置を検出する工程と、
前記位置から前記端部の構成元素の分布を特定する工程と、
前記各層を電界蒸発させ前記スクリーンに前記イオンが到達した位置を、前記端部の構成元素の分布に基づき時系列的にトレースすることにより前記各層の構成元素の分布を特定する工程と、を含むアトムプローブ分析方法。 - 前記各層のそれぞれの界面の方向は、前記試料を支持する試料基板に対し直交する方向である請求項1に記載のアトムプローブ分析方法。
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JP2009220844A JP4902712B2 (ja) | 2009-09-25 | 2009-09-25 | アトムプローブ分析方法 |
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JP2009220844A JP4902712B2 (ja) | 2009-09-25 | 2009-09-25 | アトムプローブ分析方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004075873A Division JP4393899B2 (ja) | 2004-03-17 | 2004-03-17 | アトムプローブ装置用試料及びその加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009294235A JP2009294235A (ja) | 2009-12-17 |
JP4902712B2 true JP4902712B2 (ja) | 2012-03-21 |
Family
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JP2009220844A Expired - Lifetime JP4902712B2 (ja) | 2009-09-25 | 2009-09-25 | アトムプローブ分析方法 |
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JP (1) | JP4902712B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6382495B2 (ja) | 2013-09-02 | 2018-08-29 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
JP6271189B2 (ja) | 2013-09-02 | 2018-01-31 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
JP6140298B2 (ja) | 2013-12-05 | 2017-05-31 | 株式会社日立製作所 | 試料ホルダ及び真空分析装置 |
CN112204374B (zh) * | 2018-05-25 | 2023-12-26 | 三菱电机株式会社 | 透射型电子显微镜样品的制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2938758B2 (ja) * | 1994-07-08 | 1999-08-25 | 株式会社日立製作所 | 金属材料の耐腐食性評価方法、高耐食合金の設計方法、金属材料の腐食状態診断方法およびプラントの運転方法 |
JP2002042715A (ja) * | 2000-07-25 | 2002-02-08 | Kanazawa Inst Of Technology | 組成分布立体表示アトムプローブおよび走査型組成分布立体表示アトムプローブ |
JP4393899B2 (ja) * | 2004-03-17 | 2010-01-06 | エスアイアイ・ナノテクノロジー株式会社 | アトムプローブ装置用試料及びその加工方法 |
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2009
- 2009-09-25 JP JP2009220844A patent/JP4902712B2/ja not_active Expired - Lifetime
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