JP4901874B2 - Ｅｕｖミラー - Google Patents

Ｅｕｖミラー Download PDF

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Publication number
JP4901874B2
JP4901874B2 JP2008538280A JP2008538280A JP4901874B2 JP 4901874 B2 JP4901874 B2 JP 4901874B2 JP 2008538280 A JP2008538280 A JP 2008538280A JP 2008538280 A JP2008538280 A JP 2008538280A JP 4901874 B2 JP4901874 B2 JP 4901874B2
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JP
Japan
Prior art keywords
mirror
liquid
opening
aspheric surface
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008538280A
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English (en)
Japanese (ja)
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JP2009515326A (ja
JP2009515326A5 (https=
Inventor
ファーガル・オライリー
パトリック・ヘイデン
ジェラード・オサリバン
パドレイグ・ダン
Original Assignee
ユニバーシティ・カレッジ・ダブリン，ナショナル・ユニバーシティ・オブ・アイルランド，ダブリン
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Application filed by ユニバーシティ・カレッジ・ダブリン，ナショナル・ユニバーシティ・オブ・アイルランド，ダブリン filed Critical ユニバーシティ・カレッジ・ダブリン，ナショナル・ユニバーシティ・オブ・アイルランド，ダブリン
Publication of JP2009515326A publication Critical patent/JP2009515326A/ja
Publication of JP2009515326A5 publication Critical patent/JP2009515326A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2008538280A 2005-11-02 2006-10-23 Ｅｕｖミラー Expired - Fee Related JP4901874B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IE20050730 2005-11-02
IES2005/0730 2005-11-02
PCT/EP2006/010187 WO2007051537A2 (en) 2005-11-02 2006-10-23 High power euv lamp system

Publications (3)

Publication Number Publication Date
JP2009515326A JP2009515326A (ja) 2009-04-09
JP2009515326A5 JP2009515326A5 (https=) 2009-12-10
JP4901874B2 true JP4901874B2 (ja) 2012-03-21

Family

ID=37564079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008538280A Expired - Fee Related JP4901874B2 (ja) 2005-11-02 2006-10-23 Ｅｕｖミラー

Country Status (6)

Country Link
US (1) US7763872B2 (https=)
EP (1) EP1946331B1 (https=)
JP (1) JP4901874B2 (https=)
AT (1) ATE430369T1 (https=)
DE (1) DE602006006589D1 (https=)
WO (1) WO2007051537A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2904176A1 (fr) * 2006-07-24 2008-01-25 Xenocs Soc Par Actions Simplif Systeme de delivrance de faisceau de rayons x stabilise
ATE551882T1 (de) * 2007-09-07 2012-04-15 Koninkl Philips Electronics Nv Drehradelektrodenvorrichtung für gasentladungsquellen mit radabdeckung für hochleistungsbetrieb
EP2198675B1 (en) 2007-09-07 2013-03-13 Philips Intellectual Property & Standards GmbH Electrode device for gas discharge sources and method of operating a gas discharge source having this electrode device
EP2215527A2 (en) 2007-11-22 2010-08-11 Philips Intellectual Property & Standards GmbH Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device
NL1036613A1 (nl) * 2008-03-03 2009-09-07 Asml Netherlands Bv Lithographic apparatus, plasma source, and reflecting method.
US20110039039A1 (en) * 2008-04-30 2011-02-17 University College Dublin, National University Of Ireland, Dublin Wetting a surface of a solid substrate with a liquid metal
US8519367B2 (en) * 2008-07-07 2013-08-27 Koninklijke Philips N.V. Extreme UV radiation generating device comprising a corrosion-resistant material
EP2157481A3 (en) * 2008-08-14 2012-06-13 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
JP5577351B2 (ja) * 2008-12-22 2014-08-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および放射システム
US8330131B2 (en) * 2010-01-11 2012-12-11 Media Lario, S.R.L. Source-collector module with GIC mirror and LPP EUV light source
US8746975B2 (en) 2011-02-17 2014-06-10 Media Lario S.R.L. Thermal management systems, assemblies and methods for grazing incidence collectors for EUV lithography
US8731139B2 (en) 2011-05-04 2014-05-20 Media Lario S.R.L. Evaporative thermal management of grazing incidence collectors for EUV lithography
NL2010965A (en) 2012-06-22 2013-12-24 Asml Netherlands Bv Radiation source and lithographic apparatus.
US9544984B2 (en) * 2013-07-22 2017-01-10 Kla-Tencor Corporation System and method for generation of extreme ultraviolet light
JP6571092B2 (ja) 2013-09-25 2019-09-04 エーエスエムエル ネザーランズ ビー．ブイ． ビームデリバリ装置及び方法
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
US10613444B2 (en) * 2018-08-28 2020-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same
US11968772B2 (en) * 2019-05-30 2024-04-23 Kla Corporation Optical etendue matching methods for extreme ultraviolet metrology
JP7806584B2 (ja) * 2022-03-30 2026-01-27 ウシオ電機株式会社 光源装置
JP2024179110A (ja) * 2023-06-14 2024-12-26 ウシオ電機株式会社 光源装置及び膜厚調整機構

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143502A (en) * 1979-04-25 1980-11-08 Toshikatsu Omiya Production of paraboloid-of-revolution mirror
DD152168A1 (de) * 1980-07-07 1981-11-18 Ustinow Nikolai Parabolspiegel zur energiegewinnung
DD230944A1 (de) * 1983-11-15 1985-12-11 Nikolai Ustinow Parabolspiegel zur informationsgewinnung
JPH05343297A (ja) * 1992-06-09 1993-12-24 Matsushita Electron Corp 露光方法および露光装置
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren
JP4065528B2 (ja) * 2003-03-10 2008-03-26 キヤノン株式会社 恒温真空容器及びそれを用いた露光装置
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP2006019510A (ja) * 2004-07-01 2006-01-19 Nikon Corp 露光装置及びマイクロデバイスの製造方法

Also Published As

Publication number Publication date
EP1946331A2 (en) 2008-07-23
DE602006006589D1 (https=) 2009-06-10
US20090153975A1 (en) 2009-06-18
EP1946331B1 (en) 2009-04-29
US7763872B2 (en) 2010-07-27
JP2009515326A (ja) 2009-04-09
ATE430369T1 (de) 2009-05-15
WO2007051537A3 (en) 2007-07-19
WO2007051537A2 (en) 2007-05-10

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