JP4901874B2 - Euvミラー - Google Patents
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- JP4901874B2 JP4901874B2 JP2008538280A JP2008538280A JP4901874B2 JP 4901874 B2 JP4901874 B2 JP 4901874B2 JP 2008538280 A JP2008538280 A JP 2008538280A JP 2008538280 A JP2008538280 A JP 2008538280A JP 4901874 B2 JP4901874 B2 JP 4901874B2
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- 239000007788 liquid Substances 0.000 claims description 88
- 230000005855 radiation Effects 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 229920013636 polyphenyl ether polymer Polymers 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000006023 eutectic alloy Substances 0.000 claims description 3
- 229910000939 field's metal Inorganic materials 0.000 claims description 2
- 229910001084 galinstan Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 30
- 229910001338 liquidmetal Inorganic materials 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 11
- 238000002310 reflectometry Methods 0.000 description 10
- 239000013077 target material Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009304 pastoral farming Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036278 prepulse Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Plasma & Fusion (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
Claims (17)
- EUV放射を反射することによってEUV放射を活用するためのミラーであって、
ほぼ非球面な表面と、
前記非球面表面を少なくとも部分的にコートするためにEUV反射液体を供給するための手段とを備え、
前記ミラーは、遠心力および液体表面張力の組合せによって、前記液体を前記非球面表面に閉じ込めるように回転可能であるようにしたミラー。 - 前記非球面表面が内面に形成されたシリンダ本体を備え、
前記シリンダは、長手方向の軸の回りに回転するように配置されている請求項1記載のミラー。 - 複数の同軸ベアリングをさらに備え、
前記シリンダは、前記ベアリングに回転可能に搭載されている請求項2記載のミラー。 - 前記非球面表面は、楕円の第1焦点に入射するEUV放射を、楕円の第2焦点に集光するように配置された楕円表面を含む請求項2記載のミラー。
- 前記シリンダ本体は、前記楕円の長軸と同軸上で、前記第1焦点に近接した一方の端部に、開口を有する請求項4記載のミラー。
- 前記ミラー表面は、モリブデンで構成される請求項1記載のミラー。
- 前記液体は、共晶合金、Au80Sn20、フィールド金属、ガリンスタン、ポリフェニルエーテル、またはC 30 H 22 O 4 のうちの1つである請求項1記載のミラー。
- 反射液体を供給するための前記手段は、液体供給源と、前記液体供給源と連通した少なくとも1つの固定管を含み、
前記シリンダ本体は、前記少なくとも1つの固定管に対して回転可能であり、
前記管の少なくとも1つは、前記開口を通じて前記液体を供給するように配置されている請求項5記載のミラー。 - 反射液体を供給するための前記手段は、前記シリンダ本体に形成され、液体供給源と前記非球面表面との間の連通を提供する少なくとも1つの供給孔を含む請求項5記載のミラー。
- 液体シンクをさらに備え、
前記シリンダ本体は、前記非球面表面の最も幅広部分に配置され、前記表面から前記液体シンクまでの連通を提供するシンク孔を含む請求項5記載のミラー。 - 内部で前記シンク孔が回転している外側の筐体をさらに備え、
前記筐体は、前記シンク孔からの液体を受けて、前記液体を前記液体シンクへ供給するように配置され、
前記外側筐体のための加熱器をさらに備える請求項10記載のミラー。 - 非球面な表面をそれぞれ有する複数の同心円状の金属シェルを備え、
反射液体を供給するための前記手段は、前記非球面表面を少なくとも部分的にそれぞれコートするための液体を供給するように配置されている請求項1記載のミラー。 - 液体供給源をさらに備え、
前記ミラーは、前記非球面表面の焦点に近接した一方の端部に開口を有し、
反射液体を供給するための前記手段は、前記液体を前記開口を通じて個々の非球面表面へ供給するための前記液体供給源とそれぞれ連通している複数の固定管を含み、
前記ミラーは、前記固定管に対して回転可能である請求項12記載のミラー。 - 液体シンクをさらに備え、
前記ミラーは、前記第1開口から離れた第2開口を有し、さらに、各シェルから液体を回収するために、前記第2開口において各シェルと係り合うように配置された固定回収ブレードを備え、
前記ミラーは、前記回収ブレードに対して回転可能であり、
前記ブレードは、前記液体シンクと連通している請求項13記載のミラー。 - 前記ミラーシェルは、前記開口に近接したプラズマ源からEUV放射を生じさせ、焦点に到達する2つのグレージング角反射をもたらすように配置された非球面セクションを備える請求項13記載のミラー。
- 前記非球面セクションは、前記開口に近接した双曲面の第1反射器部分と、前記開口から離れている楕円の第2反射器部分とをそれぞれ含む請求項15記載のミラー。
- 前記液体でコートされた、前記開口に近接した第1部分と、
固体反射コーティングでコートされた、前記開口から離れている第2部分とを備え、
前記固体反射コーティングは、ルテニウムを含む請求項5記載のミラー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IES2005/0730 | 2005-11-02 | ||
IE20050730 | 2005-11-02 | ||
PCT/EP2006/010187 WO2007051537A2 (en) | 2005-11-02 | 2006-10-23 | High power euv lamp system |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009515326A JP2009515326A (ja) | 2009-04-09 |
JP2009515326A5 JP2009515326A5 (ja) | 2009-12-10 |
JP4901874B2 true JP4901874B2 (ja) | 2012-03-21 |
Family
ID=37564079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008538280A Active JP4901874B2 (ja) | 2005-11-02 | 2006-10-23 | Euvミラー |
Country Status (6)
Country | Link |
---|---|
US (1) | US7763872B2 (ja) |
EP (1) | EP1946331B1 (ja) |
JP (1) | JP4901874B2 (ja) |
AT (1) | ATE430369T1 (ja) |
DE (1) | DE602006006589D1 (ja) |
WO (1) | WO2007051537A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2904176A1 (fr) * | 2006-07-24 | 2008-01-25 | Xenocs Soc Par Actions Simplif | Systeme de delivrance de faisceau de rayons x stabilise |
CN101796892B (zh) * | 2007-09-07 | 2013-02-06 | 皇家飞利浦电子股份有限公司 | 用于以高功率操作的包括轮盖的气体放电源的转轮式电极装置 |
JP4949516B2 (ja) * | 2007-09-07 | 2012-06-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ガス放電光源用の電極デバイス、及びこの電極デバイスをもつガス放電光源を作動させる方法 |
CN101868764A (zh) | 2007-11-22 | 2010-10-20 | 皇家飞利浦电子股份有限公司 | 增加设置在照射设备中的聚集器光学器件的操作寿命的方法及相应的照射设备 |
NL1036613A1 (nl) * | 2008-03-03 | 2009-09-07 | Asml Netherlands Bv | Lithographic apparatus, plasma source, and reflecting method. |
EP2274455A2 (en) * | 2008-04-30 | 2011-01-19 | University College Dublin National University Of Ireland, Dublin | Wetting a surface of a solid substrate with a liquid metal |
WO2010004481A1 (en) * | 2008-07-07 | 2010-01-14 | Philips Intellectual Property & Standards Gmbh | Extreme uv radiation generating device comprising a corrosion-resistant material |
EP2157481A3 (en) * | 2008-08-14 | 2012-06-13 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
JP5577351B2 (ja) * | 2008-12-22 | 2014-08-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および放射システム |
US8330131B2 (en) * | 2010-01-11 | 2012-12-11 | Media Lario, S.R.L. | Source-collector module with GIC mirror and LPP EUV light source |
US8746975B2 (en) | 2011-02-17 | 2014-06-10 | Media Lario S.R.L. | Thermal management systems, assemblies and methods for grazing incidence collectors for EUV lithography |
US8731139B2 (en) | 2011-05-04 | 2014-05-20 | Media Lario S.R.L. | Evaporative thermal management of grazing incidence collectors for EUV lithography |
US9753383B2 (en) | 2012-06-22 | 2017-09-05 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
US9544984B2 (en) * | 2013-07-22 | 2017-01-10 | Kla-Tencor Corporation | System and method for generation of extreme ultraviolet light |
JP6571092B2 (ja) * | 2013-09-25 | 2019-09-04 | エーエスエムエル ネザーランズ ビー.ブイ. | ビームデリバリ装置及び方法 |
RU2670273C2 (ru) * | 2017-11-24 | 2018-10-22 | Общество с ограниченной ответственностью "РнД-ИСАН" | Устройство и способ для генерации излучения из лазерной плазмы |
US10613444B2 (en) * | 2018-08-28 | 2020-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor apparatus and method of operating the same |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143502A (en) * | 1979-04-25 | 1980-11-08 | Toshikatsu Omiya | Production of paraboloid-of-revolution mirror |
DD152168A1 (de) * | 1980-07-07 | 1981-11-18 | Ustinow Nikolai | Parabolspiegel zur energiegewinnung |
DD230944A1 (de) * | 1983-11-15 | 1985-12-11 | Nikolai Ustinow | Parabolspiegel zur informationsgewinnung |
JPH05343297A (ja) * | 1992-06-09 | 1993-12-24 | Matsushita Electron Corp | 露光方法および露光装置 |
US7439530B2 (en) * | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
JP4065528B2 (ja) * | 2003-03-10 | 2008-03-26 | キヤノン株式会社 | 恒温真空容器及びそれを用いた露光装置 |
EP1624467A3 (en) * | 2003-10-20 | 2007-05-30 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
JP2006019510A (ja) * | 2004-07-01 | 2006-01-19 | Nikon Corp | 露光装置及びマイクロデバイスの製造方法 |
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2006
- 2006-10-23 WO PCT/EP2006/010187 patent/WO2007051537A2/en active Application Filing
- 2006-10-23 JP JP2008538280A patent/JP4901874B2/ja active Active
- 2006-10-23 DE DE602006006589T patent/DE602006006589D1/de active Active
- 2006-10-23 AT AT06806462T patent/ATE430369T1/de not_active IP Right Cessation
- 2006-10-23 US US12/083,361 patent/US7763872B2/en active Active
- 2006-10-23 EP EP06806462A patent/EP1946331B1/en active Active
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WO2007051537A3 (en) | 2007-07-19 |
WO2007051537A2 (en) | 2007-05-10 |
DE602006006589D1 (ja) | 2009-06-10 |
ATE430369T1 (de) | 2009-05-15 |
US20090153975A1 (en) | 2009-06-18 |
EP1946331B1 (en) | 2009-04-29 |
JP2009515326A (ja) | 2009-04-09 |
EP1946331A2 (en) | 2008-07-23 |
US7763872B2 (en) | 2010-07-27 |
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