JP4898981B1 - レーザ光源モジュール及びレーザ光源モジュールの製造方法 - Google Patents
レーザ光源モジュール及びレーザ光源モジュールの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3129—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
- H04N9/3155—Modulator illumination systems for controlling the light source
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3191—Testing thereof
- H04N9/3194—Testing thereof including sensor feedback
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
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Abstract
【選択図】図2
Description
次に、レーザ光源モジュール100の製造方法について、図4を参照して説明する。図4は、レーザ光源モジュール100を組み立てる手順を示すフローチャートの一例である。
図1乃至図3で示した構成(「第1構成例」とも呼ぶ。)は一例であり、本発明が適用可能なレーザ光源モジュール100の構成は、これに限定されない。ここで、図5及び図6を参照して、本発明に適用可能なレーザ光源モジュール100の他の構成例である第2構成例及び第3構成例について説明する。なお、第1構成例と同様の部分については、適宜同一の符号を付し、その説明を省略する。
2 画像信号入力部
3 ケース部
4 封止透明カバー
5 プリント基板
6 出力用レンズ
11 スクリーン
20 コントロールユニット
100 レーザ光源モジュール
LD1 赤色レーザ光源
LD2 緑色レーザ光源
LD3 青色レーザ光源
PZ プリズム
PD フォトダイオード
Claims (6)
- それぞれ波長が異なる複数のレーザ光源と、
前記レーザ光源から出射されたレーザ光をモニタするための受光素子と、
前記複数のレーザ光源を収納するケース部と、
前記ケース部を封止する封止部と、
前記レーザ光を集光して前記受光素子に入射させる集光レンズとを備え、
前記受光素子は、前記封止部に取り付けられており、
前記集光レンズは、前記封止部に取り付けられていることを特徴とするレーザ光源モジュール。 - 前記レーザ光源から出射されたレーザ光を重ね合わせる合成素子と、
前記合成素子によって重ね合わせたレーザ光を出力する出力部とを備え、
前記ケース部は、前記合成素子を収納することを特徴とする請求項1に記載のレーザ光源モジュール。 - 前記集光レンズによって集光された光を反射して前記受光素子に入射させる反射ミラーを備え、
前記反射ミラーは、前記封止部に取り付けられているか当該封止部と一体形成されていることを特徴とする請求項1または2に記載のレーザ光源モジュール。 - 前記封止部は、前記レーザ光が透過可能であり、
前記受光素子は、前記ケース部と前記封止部とにより封止されない位置に取り付けられ、
前記受光素子と接着し、前記受光素子が生成した信号を伝送するプリント基板をさらに備えることを特徴とする請求項1乃至3のいずれか一項に記載のレーザ光源モジュール。 - 前記封止部は、前記ケース部と対向する面の反対面に凹部を有し、
前記プリント基板は、前記凹部を覆う位置であって、前記受光素子が前記凹部に収納される位置に、前記反対面に対して接着されることを特徴とする請求項4に記載のレーザ光源モジュール。 - それぞれ波長が異なる複数のレーザ光源と、
前記レーザ光源から出射されたレーザ光を重ね合わせる合成素子と、
前記レーザ光源から出射されたレーザ光をモニタするための受光素子と、
前記複数のレーザ光源と前記合成素子とを収納するケース部と、
前記ケース部を封止する封止部と、を備え、前記合成素子によって重ね合わせたレーザ光を出力するレーザ光源モジュールの製造方法であって、
前記複数のレーザ光源と、前記合成素子とを前記ケース部に取り付ける第1工程と、
前記第1工程の実行後、前記ケース部を封止する位置に、前記封止部を取り付ける第2工程と、
前記第2工程の実行後、前記受光素子を前記封止部に取り付ける第3工程と、
を備えることを特徴とするレーザ光源モジュールの製造方法。
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PCT/JP2010/068463 WO2012053070A1 (ja) | 2010-10-20 | 2010-10-20 | レーザ光源モジュール及びレーザ光源モジュールの製造方法 |
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JP2011283661A Division JP2012094891A (ja) | 2011-12-26 | 2011-12-26 | レーザ光源モジュール及びレーザ光源モジュールの製造方法 |
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JP4898981B1 true JP4898981B1 (ja) | 2012-03-21 |
JPWO2012053070A1 JPWO2012053070A1 (ja) | 2014-02-24 |
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US (1) | US8876327B2 (ja) |
JP (1) | JP4898981B1 (ja) |
WO (1) | WO2012053070A1 (ja) |
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DE102017124147A1 (de) * | 2017-10-17 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement |
JP7518375B2 (ja) | 2020-09-30 | 2024-07-18 | 日亜化学工業株式会社 | 発光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131581A (ja) * | 1984-11-30 | 1986-06-19 | Sharp Corp | 半導体レ−ザ装置 |
JP2001184706A (ja) * | 1999-12-27 | 2001-07-06 | Sanyo Electric Co Ltd | 光ピックアップ装置、およびそれを用いた光ディスク装置 |
JP2008010837A (ja) * | 2006-05-29 | 2008-01-17 | Fujikura Ltd | 光通信モジュールとその製造方法及び光送受信装置 |
JP2009295690A (ja) * | 2008-06-03 | 2009-12-17 | Jtekt Corp | レーザ発振装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11273138A (ja) | 1998-03-25 | 1999-10-08 | Sony Corp | 光半導体装置および光学ピックアップ |
JP2003069125A (ja) | 2001-08-27 | 2003-03-07 | Fujitsu Ltd | 光集積素子、光学ヘッド及び光学ヘッドの製造方法 |
JP2006054366A (ja) * | 2004-08-13 | 2006-02-23 | Fuji Photo Film Co Ltd | レーザモジュール |
JP2006286866A (ja) * | 2005-03-31 | 2006-10-19 | Fuji Photo Film Co Ltd | レーザモジュール |
JP2007035884A (ja) | 2005-07-26 | 2007-02-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置及び半導体レーザ装置の製造方法 |
EP2151900B1 (en) | 2007-05-14 | 2016-03-23 | Fujikura Ltd. | Optical communications module, process for manufacturing the same, and optical transmitter and receiver apparatus |
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2010
- 2010-10-20 US US13/880,852 patent/US8876327B2/en not_active Expired - Fee Related
- 2010-10-20 JP JP2011543945A patent/JP4898981B1/ja active Active
- 2010-10-20 WO PCT/JP2010/068463 patent/WO2012053070A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131581A (ja) * | 1984-11-30 | 1986-06-19 | Sharp Corp | 半導体レ−ザ装置 |
JP2001184706A (ja) * | 1999-12-27 | 2001-07-06 | Sanyo Electric Co Ltd | 光ピックアップ装置、およびそれを用いた光ディスク装置 |
JP2008010837A (ja) * | 2006-05-29 | 2008-01-17 | Fujikura Ltd | 光通信モジュールとその製造方法及び光送受信装置 |
JP2009295690A (ja) * | 2008-06-03 | 2009-12-17 | Jtekt Corp | レーザ発振装置 |
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JPWO2012053070A1 (ja) | 2014-02-24 |
US8876327B2 (en) | 2014-11-04 |
US20130208465A1 (en) | 2013-08-15 |
WO2012053070A1 (ja) | 2012-04-26 |
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