JP4896515B2 - 赤外線検知素子 - Google Patents
赤外線検知素子 Download PDFInfo
- Publication number
- JP4896515B2 JP4896515B2 JP2005373266A JP2005373266A JP4896515B2 JP 4896515 B2 JP4896515 B2 JP 4896515B2 JP 2005373266 A JP2005373266 A JP 2005373266A JP 2005373266 A JP2005373266 A JP 2005373266A JP 4896515 B2 JP4896515 B2 JP 4896515B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- infrared
- black film
- membrane
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010931 gold Substances 0.000 claims description 34
- 229910052737 gold Inorganic materials 0.000 claims description 34
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 33
- 239000012528 membrane Substances 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 25
- 238000001514 detection method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 35
- 239000002184 metal Substances 0.000 description 35
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Description
2 シリコン基板
3 空洞
4 メンブレン
5 アモルファスシリコン層
6 赤外線吸収膜
7 熱電部材
8 第1の金属黒膜
9 第2の金属黒膜
Claims (2)
- シリコン基板のダイヤフラム構造上に形成されたメンブレンと、前記メンブレン上に形成された金属粒子の蒸着物からなる赤外線吸収層とを有する赤外線検知素子であって、
前記赤外線吸収層は、前記メンブレン表面上にアモルファスシリコン層を介して設けられた真空度200Pa〜270Paの状態で蒸着形成された第1の金黒膜と、前記第1の金黒膜上に設けられ真空度300Pa〜600Paの状態で蒸着形成された第2の金黒膜とを有しており、前記第1の金黒膜は前記第2の金黒膜よりも赤外線の透過率が低く反射率が高い膜であることを特徴とする赤外線検知素子。 - 前記第1の金黒膜の膜厚は1μm以下であり、前記第2の金黒膜の膜厚は2μm以下である請求項1記載の赤外線検知素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005373266A JP4896515B2 (ja) | 2005-11-28 | 2005-11-28 | 赤外線検知素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005373266A JP4896515B2 (ja) | 2005-11-28 | 2005-11-28 | 赤外線検知素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007150217A JP2007150217A (ja) | 2007-06-14 |
JP4896515B2 true JP4896515B2 (ja) | 2012-03-14 |
Family
ID=38211204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005373266A Active JP4896515B2 (ja) | 2005-11-28 | 2005-11-28 | 赤外線検知素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4896515B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5043556B2 (ja) * | 2007-08-09 | 2012-10-10 | セイコーNpc株式会社 | 水素ガスセンサ |
JP6260628B2 (ja) * | 2016-01-18 | 2018-01-17 | 株式会社豊田中央研究所 | 熱電素子及び熱発電システム |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5517104B2 (ja) * | 1974-04-18 | 1980-05-09 | ||
JPH06307929A (ja) * | 1993-04-28 | 1994-11-04 | Shimadzu Corp | 赤外線検出器 |
JP2001074549A (ja) * | 1999-06-29 | 2001-03-23 | Denso Corp | 赤外線センサ及びその製造方法 |
JP2005315723A (ja) * | 2004-04-28 | 2005-11-10 | Horiba Ltd | 熱型赤外線センサ |
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2005
- 2005-11-28 JP JP2005373266A patent/JP4896515B2/ja active Active
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JP2007150217A (ja) | 2007-06-14 |
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