JP4241360B2 - 赤外線センサの製造方法 - Google Patents
赤外線センサの製造方法 Download PDFInfo
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- JP4241360B2 JP4241360B2 JP2003416662A JP2003416662A JP4241360B2 JP 4241360 B2 JP4241360 B2 JP 4241360B2 JP 2003416662 A JP2003416662 A JP 2003416662A JP 2003416662 A JP2003416662 A JP 2003416662A JP 4241360 B2 JP4241360 B2 JP 4241360B2
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- infrared
- membrane
- film
- infrared absorption
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 97
- 239000012528 membrane Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 45
- 238000001514 detection method Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 description 16
- 230000003139 buffering effect Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229920001225 polyester resin Polymers 0.000 description 5
- 239000004645 polyester resin Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
図1は、本実施形態における赤外線センサの概略構成を示す図であり、(a)は断面図、(b)は上面側からみた平面図、(c)は検出素子の構成及びセンサ出力の取り出しを示す模式図である。尚、図1(b),(c)においては、便宜上、赤外線吸収膜を省略して図示している。
尚、R1:赤外線反射率、R0:鏡面状態における赤外線反射率、λ:赤外線の入射波長、n:赤外線吸収膜の屈折率、σ:表面粗さである。
次に、本発明の第2の実施形態を図4に基づいて説明する。図4は、本実施形態における赤外線センサ100の概略構成を示す断面図である。
13・・・メンブレン
20・・・検出素子(熱電対)
30・・・赤外線吸収膜
30a・・・(応力緩衝用)薄肉部
Claims (3)
- 基板と、
基板に形成された薄肉部としてのメンブレンと、
少なくとも一部が前記メンブレン上に形成され、赤外線を受光したときに生じる温度変化に基づいて電気信号を発生する検出素子と、
前記検出素子の少なくとも一部を被覆し、前記メンブレンの形成領域端に対して所定の間隙を有するように前記メンブレン上に形成された赤外線吸収膜と、を備える赤外線センサの製造方法であって、
前記赤外線吸収膜の形成工程において、スクリーン印刷法を用い、複数回印刷することにより厚さに差をもたせて、応力緩衝用薄肉部と該応力緩衝用薄肉部よりも厚さの厚い部位とを有し、前記赤外線吸収膜における端部から所定範囲が前記応力緩衝用薄肉部となるように、前記赤外線吸収膜を形成することを特徴とする赤外線センサの製造方法。 - 前記検出素子として、温接点を前記メンブレン上に形成し、冷接点を前記メンブレンの形成領域を除く前記基板上に形成してなる熱電対を形成することを特徴とする請求項1に記載の赤外線センサの製造方法。
- 前記基板は半導体基板であり、
絶縁膜を介して前記半導体基板上に前記検出素子を形成することを特徴とする請求項1又は請求項2に記載の赤外線センサの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003416662A JP4241360B2 (ja) | 2003-12-15 | 2003-12-15 | 赤外線センサの製造方法 |
DE102004058393.5A DE102004058393B4 (de) | 2003-12-15 | 2004-12-03 | Infrarotsensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003416662A JP4241360B2 (ja) | 2003-12-15 | 2003-12-15 | 赤外線センサの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005172762A JP2005172762A (ja) | 2005-06-30 |
JP4241360B2 true JP4241360B2 (ja) | 2009-03-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003416662A Expired - Fee Related JP4241360B2 (ja) | 2003-12-15 | 2003-12-15 | 赤外線センサの製造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP4241360B2 (ja) |
DE (1) | DE102004058393B4 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2490751C1 (ru) * | 2012-02-09 | 2013-08-20 | Открытое акционерное общество "АНГСТРЕМ" | Микроболометр с упрочненными поддерживающими балками и способы его изготовления |
JP6095856B2 (ja) | 2015-02-09 | 2017-03-15 | 三菱電機株式会社 | 電磁波検出器、及びガス分析装置 |
US10234379B2 (en) | 2015-04-15 | 2019-03-19 | Mitsubishi Electric Corporation | Electromagnetic wave detector, electromagnetic wave detector array, and gas analyzing apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10225377B4 (de) * | 2001-06-11 | 2014-10-09 | Denso Corporation | Verfahren zur Herstellung eines Thermosäuleninfrarotstrahlungssensors |
JP2003207391A (ja) * | 2002-01-17 | 2003-07-25 | Nissan Motor Co Ltd | 赤外線検知素子とその製造方法及びその製造装置 |
-
2003
- 2003-12-15 JP JP2003416662A patent/JP4241360B2/ja not_active Expired - Fee Related
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2004
- 2004-12-03 DE DE102004058393.5A patent/DE102004058393B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005172762A (ja) | 2005-06-30 |
DE102004058393B4 (de) | 2014-09-11 |
DE102004058393A1 (de) | 2005-07-07 |
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