JP4888647B2 - 液体噴射ヘッド及び液体噴射装置 - Google Patents
液体噴射ヘッド及び液体噴射装置 Download PDFInfo
- Publication number
- JP4888647B2 JP4888647B2 JP2006279277A JP2006279277A JP4888647B2 JP 4888647 B2 JP4888647 B2 JP 4888647B2 JP 2006279277 A JP2006279277 A JP 2006279277A JP 2006279277 A JP2006279277 A JP 2006279277A JP 4888647 B2 JP4888647 B2 JP 4888647B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- film
- width
- lower electrode
- liquid ejecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007788 liquid Substances 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 description 21
- 230000001681 protective effect Effects 0.000 description 18
- 238000004891 communication Methods 0.000 description 13
- 239000002243 precursor Substances 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 6
- 238000005238 degreasing Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006279277A JP4888647B2 (ja) | 2006-10-12 | 2006-10-12 | 液体噴射ヘッド及び液体噴射装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006279277A JP4888647B2 (ja) | 2006-10-12 | 2006-10-12 | 液体噴射ヘッド及び液体噴射装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008094002A JP2008094002A (ja) | 2008-04-24 |
JP2008094002A5 JP2008094002A5 (enrdf_load_stackoverflow) | 2009-10-22 |
JP4888647B2 true JP4888647B2 (ja) | 2012-02-29 |
Family
ID=39377370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006279277A Expired - Fee Related JP4888647B2 (ja) | 2006-10-12 | 2006-10-12 | 液体噴射ヘッド及び液体噴射装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4888647B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009292003A (ja) * | 2008-06-04 | 2009-12-17 | Seiko Epson Corp | 液滴吐出ヘッド、インクジェットプリンタ、液滴吐出ヘッドの製造方法およびインクジェットプリンタの製造方法 |
US8651630B2 (en) | 2009-01-20 | 2014-02-18 | Hewlett-Packard Development Company, L.P. | Fluid ejector structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003008091A (ja) * | 2001-06-26 | 2003-01-10 | Oki Data Corp | ダイアフラム型圧電アクチュエータ及びインクジェットヘッド |
WO2005028207A1 (ja) * | 2003-09-24 | 2005-03-31 | Seiko Epson Corporation | 液体噴射ヘッド及びその製造方法並びに液体噴射装置 |
-
2006
- 2006-10-12 JP JP2006279277A patent/JP4888647B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008094002A (ja) | 2008-04-24 |
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