JP4885838B2 - 波形パッドコンディショナーおよびその使用方法 - Google Patents
波形パッドコンディショナーおよびその使用方法 Download PDFInfo
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- JP4885838B2 JP4885838B2 JP2007502804A JP2007502804A JP4885838B2 JP 4885838 B2 JP4885838 B2 JP 4885838B2 JP 2007502804 A JP2007502804 A JP 2007502804A JP 2007502804 A JP2007502804 A JP 2007502804A JP 4885838 B2 JP4885838 B2 JP 4885838B2
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- Expired - Fee Related
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 claims description 80
- 230000003750 conditioning effect Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 21
- 238000005520 cutting process Methods 0.000 description 19
- 239000002245 particle Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 14
- 230000001186 cumulative effect Effects 0.000 description 8
- 238000007373 indentation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004417 polycarbonate Substances 0.000 description 8
- 229920000515 polycarbonate Polymers 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000001143 conditioned effect Effects 0.000 description 4
- -1 for example Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 241000280258 Dyschoriste linearis Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000419 boron suboxide Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/06—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels
- B24B53/07—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels by means of forming tools having a shape complementary to that to be produced, e.g. blocks, profile rolls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D9/00—Wheels or drums supporting in exchangeable arrangement a layer of flexible abrasive material, e.g. sandpaper
- B24D9/08—Circular back-plates for carrying flexible material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Branch Pipes, Bends, And The Like (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Secondary Cells (AREA)
Description
両面テープを使用して研磨材料を基材に取り付けることによって研磨ディスクを作製した。研磨材料は、ミネソタ州セントポールの3M社(3M Co.,St.Paul,MN)より入手可能な「472L、40μm、炭化ケイ素微細仕上げフィルム」(472L,40μm,silicon carbide microfinishing film)を直径83mmのディスクに切り取り、中央に19mmの孔を開けたものであった。基材は、厚さ6.3mm、直径83mmのポリカーボネートディスクであった。基材にドリルで孔を開け、30mmの直径上に互いに等間隔に配置した6個の10−24UNCのねじ孔を形成した。
実施例1Bでは、実施例1Aで使用した研磨ディスクを、波形ディスクのまわりに60°回転させ(すなわち割出しを行い)、実施例1Aと同じ試験を使用して再試験した。回転後、実施例1Aの波形ディスクの同じ貫通孔、および研磨ディスクの別のねじ孔に3つのねじを取り付けた。これらのねじを使用して、研磨ディスクの基材を、波形ディスクのバッキングプレートの3つのくぼみ部分に引き寄せて接触させた。工作物の累積切削量を測定することによって、この波形パッドコンディショナーの試験を行った。結果を表1および図5および6に示す。
波形表面をなくすために波形プレートを外したことを除けば、実施例1Aと同じ方法で比較例1を作製した。6個のねじを使用して、研磨層の基材をバッキングプレートに取り付けた。工作物の累積切削量を測定することによって、この平坦なパッドコンディショナーの試験を行った。結果を表1および図5および6に示す。
焼結研磨層をポリカーボネート基材に取り付けて研磨ディスクを作製したことを除けば、実施例1Aと同じ方法で、実施例2Aを作製し試験を行った。ミネソタ州セントポールの3M社(3M Co.,St.Paul,MN)より入手可能なA160、3M 4980−6パッドコンディショナーから焼結層を取り外すことによって、焼結研磨層を作製した。焼結層を取り付けているエポキシが軟化するまで、パッドコンディショナーをホットプレート上で加熱した後、焼結層を取り外した。次に、この焼結層を、エポキシでポリカーボネート基材に取り付けた。
実施例2Bでは、実施例2Aの研磨ディスクを、波形ディスクのまわりに60°回転させ(すなわち割出しを行い)、実施例2Aと同じ試験を使用して再試験した。回転後、実施例2Aの波形ディスクの同じ貫通孔、および研磨ディスクの別のねじ孔に3つのねじを取り付けた。これらのねじを使用して、研磨ディスクの基材を、波形ディスクのバッキングプレートの3つのくぼみ部分に引き寄せて接触させた。工作物の累積切削量を測定することによって、この波形パッドコンディショナーの試験を行った。結果を表2に示す。
波形表面をなくすために波形プレートを外したことを除けば、実施例2Aと同じ方法で比較例2を作製した。6個のねじを使用して、研磨層の基材をバッキングプレートに取り付けた。工作物から除去される累積材料量を測定することによって、この平坦なパッドコンディショナーの試験を行った。結果を表2に示す。
Claims (4)
- 研磨表面と、前記研磨表面の反対側の第2の表面とを含む研磨ディスクと、
前記研磨ディスクの前記第2の表面に隣接する波形表面を形成する複数の波形を有する波形ディスクであって、複数の隆起部分と複数のくぼみ部分とを含む波形ディスクと、
を含み、前記研磨ディスクが、前記複数のくぼみ部分に解除自在に取り付けられて複数の波形を有する波形研磨表面を形成するパッドコンディショナー。 - 前記波形ディスクがパターン形成された波形表面を含む、請求項1に記載のパッドコンディショナー。
- 前記パターン形成された波形表面が、0.25mm〜0.75mmの範囲のオフセットを含む、請求項2に記載のパッドコンディショナー。
- 研磨パッドのコンディショニングを行う方法であって、
前記パッドを、請求項1記載のパッドコンディショナーの研磨ディスクに接触させるステップと、
前記研磨ディスクを前記パッドに対して移動させて前記パッドの表面を改質するステップと、を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/797,892 US6951509B1 (en) | 2004-03-09 | 2004-03-09 | Undulated pad conditioner and method of using same |
US10/797,892 | 2004-03-09 | ||
PCT/US2005/002310 WO2005095059A1 (en) | 2004-03-09 | 2005-01-25 | Undulated pad conditioner and method of using same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007528300A JP2007528300A (ja) | 2007-10-11 |
JP2007528300A5 JP2007528300A5 (ja) | 2008-03-13 |
JP4885838B2 true JP4885838B2 (ja) | 2012-02-29 |
Family
ID=34920155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007502804A Expired - Fee Related JP4885838B2 (ja) | 2004-03-09 | 2005-01-25 | 波形パッドコンディショナーおよびその使用方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6951509B1 (ja) |
EP (1) | EP1722926B1 (ja) |
JP (1) | JP4885838B2 (ja) |
KR (1) | KR101127256B1 (ja) |
CN (1) | CN100563931C (ja) |
AT (1) | ATE439944T1 (ja) |
DE (1) | DE602005016086D1 (ja) |
MY (1) | MY135136A (ja) |
TW (1) | TWI358743B (ja) |
WO (1) | WO2005095059A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7744447B2 (en) * | 2005-03-16 | 2010-06-29 | Goei, Co., Ltd. | Abrasive disc |
TWI290337B (en) * | 2005-08-09 | 2007-11-21 | Princo Corp | Pad conditioner for conditioning a CMP pad and method of making the same |
JP4791121B2 (ja) * | 2005-09-22 | 2011-10-12 | 新日鉄マテリアルズ株式会社 | 研磨布用ドレッサー |
WO2007043263A1 (ja) * | 2005-10-14 | 2007-04-19 | Asahi Glass Company, Limited | 研磨パッド用ツルーイング部材及び研磨パッドのツルーイング方法 |
US8795035B2 (en) | 2008-06-26 | 2014-08-05 | Saint-Gobain Abrasives, Inc. | Chemical mechanical planarization pad conditioner and method of forming |
TW201016387A (en) * | 2008-10-22 | 2010-05-01 | jian-min Song | CMP Pad Dressers with Hybridized abrasive surface and related methods |
US8628597B2 (en) | 2009-06-25 | 2014-01-14 | 3M Innovative Properties Company | Method of sorting abrasive particles, abrasive particle distributions, and abrasive articles including the same |
EP3385032A4 (en) * | 2015-12-25 | 2019-01-02 | New Registon Co., Ltd. | Grinding device and grinding implement for said grinding device |
CN106078517A (zh) * | 2016-08-03 | 2016-11-09 | 咏巨科技有限公司 | 一种抛光垫修整装置 |
US10471567B2 (en) * | 2016-09-15 | 2019-11-12 | Entegris, Inc. | CMP pad conditioning assembly |
CN106733792A (zh) * | 2016-12-12 | 2017-05-31 | 北京中电科电子装备有限公司 | 一种用于半导体磨削台的清洁装置 |
US20190337119A1 (en) * | 2016-12-21 | 2019-11-07 | 3M Innovative Properties Company | Pad conditioner with spacer and wafer planarization system |
JP6899490B2 (ja) * | 2017-11-21 | 2021-07-07 | スリーエム イノベイティブ プロパティズ カンパニー | 被覆研磨ディスク並びにその製造方法及び使用方法 |
US20200094375A1 (en) * | 2018-09-26 | 2020-03-26 | Cana Diamond Technology, LLC | Multiple zone pad conditioning disk |
US20200130139A1 (en) * | 2018-10-31 | 2020-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device for conditioning chemical mechanical polishing |
US11331767B2 (en) | 2019-02-01 | 2022-05-17 | Micron Technology, Inc. | Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods |
US11524385B2 (en) * | 2019-06-07 | 2022-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad with lobed protruding structures |
CN116749080B (zh) * | 2023-08-18 | 2023-11-14 | 浙江求是半导体设备有限公司 | 修整方法 |
Citations (1)
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US2990661A (en) * | 1958-07-10 | 1961-07-04 | Donald P Hackett | Backing disk for abrasive sheet |
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FR1596322A (ja) * | 1968-01-05 | 1970-06-15 | ||
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- 2005-01-25 EP EP05711980A patent/EP1722926B1/en not_active Not-in-force
- 2005-01-25 DE DE602005016086T patent/DE602005016086D1/de active Active
- 2005-01-25 AT AT05711980T patent/ATE439944T1/de not_active IP Right Cessation
- 2005-01-25 WO PCT/US2005/002310 patent/WO2005095059A1/en active Application Filing
- 2005-01-25 CN CNB2005800077197A patent/CN100563931C/zh not_active Expired - Fee Related
- 2005-01-25 KR KR1020067018362A patent/KR101127256B1/ko active IP Right Grant
- 2005-02-16 TW TW094104503A patent/TWI358743B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
ATE439944T1 (de) | 2009-09-15 |
KR101127256B1 (ko) | 2012-03-29 |
US20050202760A1 (en) | 2005-09-15 |
MY135136A (en) | 2008-02-29 |
TW200539256A (en) | 2005-12-01 |
EP1722926A1 (en) | 2006-11-22 |
WO2005095059A1 (en) | 2005-10-13 |
DE602005016086D1 (de) | 2009-10-01 |
JP2007528300A (ja) | 2007-10-11 |
CN1929956A (zh) | 2007-03-14 |
TWI358743B (en) | 2012-02-21 |
KR20060132717A (ko) | 2006-12-21 |
EP1722926B1 (en) | 2009-08-19 |
CN100563931C (zh) | 2009-12-02 |
US6951509B1 (en) | 2005-10-04 |
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