JP4884675B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4884675B2
JP4884675B2 JP2005008643A JP2005008643A JP4884675B2 JP 4884675 B2 JP4884675 B2 JP 4884675B2 JP 2005008643 A JP2005008643 A JP 2005008643A JP 2005008643 A JP2005008643 A JP 2005008643A JP 4884675 B2 JP4884675 B2 JP 4884675B2
Authority
JP
Japan
Prior art keywords
layer
region
substrate
gate electrode
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005008643A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005244185A (ja
JP2005244185A5 (enExample
Inventor
慎志 前川
舜平 山崎
博信 小路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005008643A priority Critical patent/JP4884675B2/ja
Publication of JP2005244185A publication Critical patent/JP2005244185A/ja
Publication of JP2005244185A5 publication Critical patent/JP2005244185A5/ja
Application granted granted Critical
Publication of JP4884675B2 publication Critical patent/JP4884675B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2005008643A 2004-01-26 2005-01-17 半導体装置の作製方法 Expired - Fee Related JP4884675B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005008643A JP4884675B2 (ja) 2004-01-26 2005-01-17 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004017694 2004-01-26
JP2004017675 2004-01-26
JP2004017694 2004-01-26
JP2004017675 2004-01-26
JP2005008643A JP4884675B2 (ja) 2004-01-26 2005-01-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005244185A JP2005244185A (ja) 2005-09-08
JP2005244185A5 JP2005244185A5 (enExample) 2008-02-07
JP4884675B2 true JP4884675B2 (ja) 2012-02-29

Family

ID=35025546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005008643A Expired - Fee Related JP4884675B2 (ja) 2004-01-26 2005-01-17 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4884675B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5314842B2 (ja) * 2006-08-25 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5329784B2 (ja) * 2006-08-25 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5210594B2 (ja) * 2006-10-31 2013-06-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5095650B2 (ja) * 2008-09-30 2012-12-12 シャープ株式会社 膜パターンとその膜パターン形成方法、及び導電膜配線、並びに電気光学装置
JP6578533B1 (ja) * 2018-06-13 2019-09-25 株式会社Ｎｓｃ 液晶パネル製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273669A (ja) * 1985-09-26 1987-04-04 Seiko Instr & Electronics Ltd 薄膜トランジスタ装置の製造方法
GB9919913D0 (en) * 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
CN1292496C (zh) * 2001-05-23 2006-12-27 造型逻辑有限公司 器件的图案形成
JP2003059940A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP4683825B2 (ja) * 2002-04-24 2011-05-18 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

Also Published As

Publication number Publication date
JP2005244185A (ja) 2005-09-08

Similar Documents

Publication Publication Date Title
KR101193417B1 (ko) 표시 장치, 그 제조 방법, 및 텔레비전
CN100533808C (zh) 显示器件及其制造方法以及电视设备
US8102005B2 (en) Wiring substrate, semiconductor device and manufacturing method thereof
US7462514B2 (en) Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US8158517B2 (en) Method for manufacturing wiring substrate, thin film transistor, display device and television device
US7416977B2 (en) Method for manufacturing display device, liquid crystal television, and EL television
JP4536601B2 (ja) 半導体装置の作製方法
US7955907B2 (en) Semiconductor device, television set, and method for manufacturing the same
US7531294B2 (en) Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and EL television
JP4969041B2 (ja) 表示装置の作製方法
JP4628004B2 (ja) 薄膜トランジスタの作製方法
JP4939756B2 (ja) 半導体装置の作製方法
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP5057652B2 (ja) 薄膜トランジスタの作製方法
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP4884675B2 (ja) 半導体装置の作製方法
JP2005286320A (ja) パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置
JP4877865B2 (ja) 薄膜トランジスタの作製方法及び表示装置の作製方法
JP4785396B2 (ja) 半導体装置の作製方法
JP4879496B2 (ja) パターン形成方法
JP4713192B2 (ja) 薄膜トランジスタの作製方法
JP5025208B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110315

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110331

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111206

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111207

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141216

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141216

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees