JP4881553B2 - １３族窒化物結晶の製造方法 - Google Patents

１３族窒化物結晶の製造方法 Download PDF

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JP4881553B2
JP4881553B2 JP2004271993A JP2004271993A JP4881553B2 JP 4881553 B2 JP4881553 B2 JP 4881553B2 JP 2004271993 A JP2004271993 A JP 2004271993A JP 2004271993 A JP2004271993 A JP 2004271993A JP 4881553 B2 JP4881553 B2 JP 4881553B2
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nitride
group
crystal
producing
raw material
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JP2005112718A (ja
JP2005112718A5 (enExample
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ますみ 伊藤
昌弘 吉村
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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JP2004271993A 2003-09-18 2004-09-17 １３族窒化物結晶の製造方法 Expired - Fee Related JP4881553B2 (ja)

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JP2004271993A JP4881553B2 (ja) 2003-09-18 2004-09-17 １３族窒化物結晶の製造方法

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JP2003326761 2003-09-18
JP2003326761 2003-09-18
JP2004271993A JP4881553B2 (ja) 2003-09-18 2004-09-17 １３族窒化物結晶の製造方法

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JP2005112718A5 JP2005112718A5 (enExample) 2007-10-18
JP4881553B2 true JP4881553B2 (ja) 2012-02-22

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298269A (ja) * 2004-04-12 2005-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
EP1772540B1 (en) 2004-07-02 2013-03-27 Mitsubishi Chemical Corporation Method for preparing crystal of nitride of metal belonging to 13 group of periodic table and method for manufacturing semiconductor device using the same
WO2007023699A1 (ja) 2005-08-24 2007-03-01 Mitsubishi Chemical Corporation 第１３族金属窒化物結晶の製造方法、半導体デバイスの製造方法、およびこれらの製造方法に用いる溶液と融液
JP2012206937A (ja) * 2006-09-13 2012-10-25 Ngk Insulators Ltd バルク状単結晶および窒化物単結晶基板
JP4910760B2 (ja) * 2007-02-22 2012-04-04 三菱化学株式会社 結晶成長速度制御方法、化合物結晶とその製造方法、および半導体デバイスの製造方法
JP2010105903A (ja) * 2008-08-21 2010-05-13 Mitsubishi Chemicals Corp 第１３族金属窒化物結晶の製造方法および半導体デバイスの製造方法
KR20120028897A (ko) 2009-06-04 2012-03-23 미쓰비시 가가꾸 가부시키가이샤 주기표 제 13 족 금속 질화물 결정의 제조 방법 및 제조 장치
JP2010077022A (ja) * 2009-11-30 2010-04-08 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
JP5392318B2 (ja) * 2011-07-29 2014-01-22 三菱化学株式会社 結晶製造方法および結晶成長速度制御方法
JP5392317B2 (ja) * 2011-07-29 2014-01-22 三菱化学株式会社 結晶製造方法および結晶成長速度制御方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01275492A (ja) * 1988-04-25 1989-11-06 Nippon Telegr & Teleph Corp <Ntt> 酸化物単結晶の成長方法
JPH06321699A (ja) * 1993-05-11 1994-11-22 Murata Mfg Co Ltd チタン酸バリウム・ストロンチウム単結晶の製造方法
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride

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