JP4875568B2 - リソグラフィプロセスのための計測システムおよび計測方法 - Google Patents

リソグラフィプロセスのための計測システムおよび計測方法 Download PDF

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Publication number
JP4875568B2
JP4875568B2 JP2007211402A JP2007211402A JP4875568B2 JP 4875568 B2 JP4875568 B2 JP 4875568B2 JP 2007211402 A JP2007211402 A JP 2007211402A JP 2007211402 A JP2007211402 A JP 2007211402A JP 4875568 B2 JP4875568 B2 JP 4875568B2
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Japan
Prior art keywords
test
corner rounding
corner
mask
distance
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Expired - Fee Related
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JP2007211402A
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Japanese (ja)
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JP2008096973A5 (cg-RX-API-DMAC10.html
JP2008096973A (ja
Inventor
ライアン ジンギュ
リピンスキ マティアス
サルマ チャンドラセカール
チュアン ハオレン
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Infineon Technologies AG
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Infineon Technologies AG
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2007211402A 2006-08-15 2007-08-14 リソグラフィプロセスのための計測システムおよび計測方法 Expired - Fee Related JP4875568B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/504,388 US7794903B2 (en) 2006-08-15 2006-08-15 Metrology systems and methods for lithography processes
US11/504,388 2006-08-15

Publications (3)

Publication Number Publication Date
JP2008096973A JP2008096973A (ja) 2008-04-24
JP2008096973A5 JP2008096973A5 (cg-RX-API-DMAC10.html) 2011-04-07
JP4875568B2 true JP4875568B2 (ja) 2012-02-15

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JP2007211402A Expired - Fee Related JP4875568B2 (ja) 2006-08-15 2007-08-14 リソグラフィプロセスのための計測システムおよび計測方法

Country Status (3)

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US (3) US7794903B2 (cg-RX-API-DMAC10.html)
EP (1) EP1890192B1 (cg-RX-API-DMAC10.html)
JP (1) JP4875568B2 (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013104992A (ja) 2011-11-14 2013-05-30 Seiko Epson Corp 偏光素子、偏光素子の製造方法、プロジェクター、液晶装置、および電子機器
JP6140954B2 (ja) 2012-09-06 2017-06-07 キヤノン株式会社 マスクデータ作成方法、それを実行するプログラムおよび情報処理装置
JP6338929B2 (ja) * 2014-05-23 2018-06-06 東芝メモリ株式会社 レチクルマーク配置方法およびレチクルマーク配置プログラム
CN104241157B (zh) * 2014-09-01 2017-02-22 上海华力微电子有限公司 一种对图形结构刻蚀能力的检测方法
EP3221897A1 (en) 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
US10546095B2 (en) 2017-06-13 2020-01-28 International Business Machines Corporation Parameter collapsing and corner reduction in an integrated circuit
US10274836B2 (en) * 2017-06-23 2019-04-30 International Business Machines Corporation Determination of lithography effective dose uniformity
CN109634070B (zh) * 2019-02-01 2020-09-01 墨研计算科学（南京）有限公司 一种基于掩模版拐角圆化的计算光刻方法及装置
WO2021071472A1 (en) * 2019-10-08 2021-04-15 Applied Materials, Inc. Universal metrology file, protocol, and process for maskless lithography systems

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419013A (en) 1981-03-30 1983-12-06 Tre Semiconductor Equipment Corporation Phase contrast alignment system for a semiconductor manufacturing apparatus
JPS5960439A (ja) 1982-09-30 1984-04-06 Fujitsu Ltd フオト・マスク
JP2995061B2 (ja) 1988-10-27 1999-12-27 ソニー株式会社 フォトマスク
US5475766A (en) * 1991-09-05 1995-12-12 Kabushiki Kaisha Toshiba Pattern inspection apparatus with corner rounding of reference pattern data
JPH06138645A (ja) 1992-10-26 1994-05-20 Fujitsu Ltd レチクル精度確認パターン，レチクル及びその製造方法
JPH0815854A (ja) 1994-06-30 1996-01-19 Fujitsu Ltd 半導体装置の製造方法
JPH08248620A (ja) 1995-03-15 1996-09-27 Nippon Precision Circuits Kk レチクルおよびこれを用いたデフォーカスレベル判定方法
JPH09160217A (ja) 1995-12-08 1997-06-20 Nikon Corp フォトマスク及びフォトマスクの形成方法
IL123473A (en) 1997-02-28 2001-08-08 Fiekowsky Peter J High accuracy particle dimension measurement system
US6368516B1 (en) 1999-06-24 2002-04-09 Infineon Technologies North America Corp. Semiconductor manufacturing methods
US6379848B1 (en) * 1999-12-20 2002-04-30 Philips Electronics No. America Corp. Reticle for use in photolithography and methods for inspecting and making same
JP4663214B2 (ja) * 2001-03-20 2011-04-06 シノプシイス インコーポレイテッド マスク欠陥のプリンタビリティ解析を提供するシステム及び方法
US6873720B2 (en) 2001-03-20 2005-03-29 Synopsys, Inc. System and method of providing mask defect printability analysis
US6581193B1 (en) * 2001-06-13 2003-06-17 Kla-Tencor Apparatus and methods for modeling process effects and imaging effects in scanning electron microscopy
JP5044095B2 (ja) 2004-11-02 2012-10-10 富士通セミコンダクター株式会社 半導体装置の製造方法
US7403572B2 (en) 2004-11-02 2008-07-22 Topseed Technology Corp. Method of preventing interferring signal transmission of electronic products
EP2093614A1 (en) * 2008-02-22 2009-08-26 Imec Split and design guidelines for double patterning

Also Published As

Publication number Publication date
EP1890192B1 (en) 2012-02-22
EP1890192A1 (en) 2008-02-20
US20120013884A1 (en) 2012-01-19
US20080044741A1 (en) 2008-02-21
JP2008096973A (ja) 2008-04-24
US7794903B2 (en) 2010-09-14
US20100283052A1 (en) 2010-11-11
US8394574B2 (en) 2013-03-12
US8067135B2 (en) 2011-11-29

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