JP4874997B2 - Cvd反応炉用ガス注入部品 - Google Patents
Cvd反応炉用ガス注入部品 Download PDFInfo
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- JP4874997B2 JP4874997B2 JP2007552614A JP2007552614A JP4874997B2 JP 4874997 B2 JP4874997 B2 JP 4874997B2 JP 2007552614 A JP2007552614 A JP 2007552614A JP 2007552614 A JP2007552614 A JP 2007552614A JP 4874997 B2 JP4874997 B2 JP 4874997B2
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- chamber
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- gas injection
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Links
- 238000002347 injection Methods 0.000 title claims description 79
- 239000007924 injection Substances 0.000 title claims description 79
- 239000007789 gas Substances 0.000 claims description 143
- 238000002156 mixing Methods 0.000 claims description 46
- 239000002243 precursor Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 26
- 239000012495 reaction gas Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- -1 hydrogen compound Chemical class 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 8
- 125000002524 organometallic group Chemical group 0.000 description 5
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (15)
- チャンバ(4)を備えたCVD反応炉用ガス注入部品(2)であって、
前記ガス注入部品(2)の周縁部にあるアクセス開口(10)を介して前記チャンバ(4)に導入されたプロセスガスを、前記CVD反応炉(1)の処理チャンバ(21)に入れるために底部に多数の排気口(23)を有し、更に、
前記アクセス開口(10)よりも前段に、実質的に等間隔で円状に分布して配置された多数の混合チャンバ組部材(11、12、13)を具備し、前記混合チャンバ組部材(11、12、13)の各々の中で少なくとも2種類のプロセスガスが混合されることを特徴とするCVD反応炉用のガス注入部品。 - 前記チャンバ(4)を囲み、実質的に等間隔で円状に分布して配置された多数のアクセス開口(10)を介して、前記チャンバ(4)と連通している環状拡散通路を有することを特徴とする請求項1に記載のガス注入部品。
- 前記混合チャンバ組部材(11、12、13)を出た前記プロセスガスの流れが、前記環状拡散通路(14)へ案内され、導入されることを特徴とする請求項2に記載のガス注入部品。
- 前記プロセスガスの流れが、ガス流案内手段(15)によって案内されることを特徴とする請求項3に記載のガス注入部品。
- 実質的に等間隔で円状に分布して配置された多数の混合チャンバ組部材(11、12、13)を有することを特徴とする請求項1〜4のいずれかに記載のガス注入部品。
- 前記混合チャンバ組部材(11、12、13)が、第一のプロセスガス用の供給管(16)が開口する第一チャンバ(11)、及び第二のプロセスガス用の供給管(17)が開口する第二チャンバ(12)を有し、前記第一及び第二チャンバが、ガス透過可能な分離壁(13)によって互いに隔てられていることを特徴とする請求項1〜5のいずれかに記載のガス注入部品。
- 前記第一チャンバ(11)が、前記環状拡散通路(14)に対して開口しており、及び前記第二チャンバ(12)が、前記環状拡散通路(14)に対して閉じられていることを特徴とする請求項6に記載のガス注入部品。
- 前記ガス透過可能な分離壁(13)が、多孔板であることを特徴とする請求項6又は7のいずれかに記載のガス注入部品。
- 前記ガス透過可能な分離壁(13)が、前記ガス流案内手段(15)の延長部分であることを特徴とする請求項6〜8のいずれかに記載のガス注入部品。
- 前記ガス浸透可能な分離壁(13)、及び前記ガス流案内手段(15)が、前記混合チャンバ組部材(11、12、13)に着脱可能な板金により形成されていることを特徴とする請求項6〜9のいずれかに記載のガス注入部品。
- 前記プロセスガスを拡散させるために多数の排気口(23)を底部に有する前記チャンバ(4)、前記チャンバ(4)を囲む環状拡散通路(14)、及び前記混合チャンバ組部材(11、12、13)の二つのチャンバ(11、12)が、板金(18)を穿孔した部分であり、前記混合チャンバ組部材(11、12、13)の前記チャンバ(11、12)につながる供給管(16、17)を形成するカバー部分が、前記板金(18)の上に係合することを特徴とする請求項1〜10のいずれかに記載のガス注入部品。
- 前記アクセス開口(10)が環状溝(22)にあり、前記アクセス開口(10)が前記環状溝(22)の壁の高さの2分の1の位置にあって、前記チャンバ(4)の底部から離れている部分に位置し、より具体的には、前記環状溝(22)の壁の3分の1の高さ位置にあって、前記チャンバ(4)の底部から最も離れている部分に位置することを特徴とする請求項1〜11のいずれかに記載のガス注入部品。
- 前記ガス注入部品の温度が調節されており、該ガス注入部品が、温度を均一化するために、熱容量を有する周縁部を、前記ガス注入部品内部のチャンバ(4)、前記環状拡散通路(14)、及び前記混合チャンバ組部材(11、12、13)の周囲に有することを特徴とする請求項1〜12のいずれかに記載のガス注入部品。
- CVD反応炉の中における請求項1〜13のいずれかに記載のガス注入部品(2)の使用方法であって、前記混合チャンバ組部材(11、12、13)の前記第一チャンバ(11)に、特に金属又は半導体成分を含有するガス状の前駆体を導入し、前記第二チャンバ(12)に、特に酸素化合物又は窒素化合物、又は水素化合物である反応ガスを導入する使用方法。
- 請求項1〜14のいずれかに記載のガス注入部品(2)を用いて、処理チャンバ(21)に前記プロセスガスを導入することを特徴とし、基板ホルダに搭載された少なくとも一つの基板をコーティングする処理チャンバを備えたCVD反応炉。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005003984A DE102005003984A1 (de) | 2005-01-28 | 2005-01-28 | Gaseinlassorgan für einen CVD-Reaktor |
DE102005003984.7 | 2005-01-28 | ||
PCT/EP2006/050048 WO2006079576A2 (de) | 2005-01-28 | 2006-01-05 | Gaseinlassorgan für einen cvd-reaktor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008528798A JP2008528798A (ja) | 2008-07-31 |
JP4874997B2 true JP4874997B2 (ja) | 2012-02-15 |
Family
ID=36102566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552614A Expired - Fee Related JP4874997B2 (ja) | 2005-01-28 | 2006-01-05 | Cvd反応炉用ガス注入部品 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8298337B2 (ja) |
EP (1) | EP1861520B1 (ja) |
JP (1) | JP4874997B2 (ja) |
KR (1) | KR20070107711A (ja) |
DE (2) | DE102005003984A1 (ja) |
TW (1) | TWI384089B (ja) |
WO (1) | WO2006079576A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005003984A1 (de) * | 2005-01-28 | 2006-08-03 | Aixtron Ag | Gaseinlassorgan für einen CVD-Reaktor |
JP2011500961A (ja) | 2007-10-11 | 2011-01-06 | バレンス プロセス イクウィップメント,インコーポレイテッド | 化学気相成長反応器 |
JP5454324B2 (ja) * | 2010-04-20 | 2014-03-26 | スズキ株式会社 | 車体後部のブラケット構造 |
CA2800469C (en) * | 2010-06-01 | 2017-07-18 | Jing Li | Fluid resistivity sensor |
DE102013113817A1 (de) | 2012-12-14 | 2014-06-18 | Aixtron Se | Gasmischvorrichtung |
DE102014106523A1 (de) | 2014-05-09 | 2015-11-12 | Aixtron Se | Vorrichtung und Verfahren zum Versorgen einer CVD- oder PVD-Beschichtungseinrichtung mit einem Prozessgasgemisch |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
CN108559974A (zh) * | 2017-12-25 | 2018-09-21 | 兰州空间技术物理研究所 | 一种基于弧形电极结构的pecvd镀膜设备 |
CN114959645B (zh) * | 2021-08-03 | 2023-09-22 | 江苏汉印机电科技股份有限公司 | 基于SiC功率器件的高速大面积CVD设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10280150A (ja) * | 1997-04-09 | 1998-10-20 | Tokyo Electron Ltd | 被処理基板の処理装置 |
US20030015291A1 (en) * | 2001-07-18 | 2003-01-23 | Jusung Engineering Co., Ltd. | Semiconductor device fabrication apparatus having multi-hole angled gas injection system |
JP2003253448A (ja) * | 2002-02-28 | 2003-09-10 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9411911D0 (en) | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
ATE249532T1 (de) | 2000-02-04 | 2003-09-15 | Aixtron Ag | Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat |
KR100516844B1 (ko) * | 2001-01-22 | 2005-09-26 | 동경 엘렉트론 주식회사 | 처리 장치 및 처리 방법 |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
DE102005003984A1 (de) * | 2005-01-28 | 2006-08-03 | Aixtron Ag | Gaseinlassorgan für einen CVD-Reaktor |
US8266911B2 (en) * | 2005-11-14 | 2012-09-18 | General Electric Company | Premixing device for low emission combustion process |
-
2005
- 2005-01-28 DE DE102005003984A patent/DE102005003984A1/de not_active Withdrawn
-
2006
- 2006-01-02 TW TW095100032A patent/TWI384089B/zh not_active IP Right Cessation
- 2006-01-05 EP EP06724824A patent/EP1861520B1/de not_active Not-in-force
- 2006-01-05 KR KR1020077019165A patent/KR20070107711A/ko active IP Right Grant
- 2006-01-05 WO PCT/EP2006/050048 patent/WO2006079576A2/de active Application Filing
- 2006-01-05 US US11/814,913 patent/US8298337B2/en not_active Expired - Fee Related
- 2006-01-05 DE DE502006004516T patent/DE502006004516D1/de active Active
- 2006-01-05 JP JP2007552614A patent/JP4874997B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10280150A (ja) * | 1997-04-09 | 1998-10-20 | Tokyo Electron Ltd | 被処理基板の処理装置 |
US20030015291A1 (en) * | 2001-07-18 | 2003-01-23 | Jusung Engineering Co., Ltd. | Semiconductor device fabrication apparatus having multi-hole angled gas injection system |
JP2003253448A (ja) * | 2002-02-28 | 2003-09-10 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI384089B (zh) | 2013-02-01 |
US8298337B2 (en) | 2012-10-30 |
KR20070107711A (ko) | 2007-11-07 |
EP1861520A2 (de) | 2007-12-05 |
US20090025639A1 (en) | 2009-01-29 |
WO2006079576A3 (de) | 2006-11-02 |
EP1861520B1 (de) | 2009-08-12 |
DE102005003984A1 (de) | 2006-08-03 |
DE502006004516D1 (de) | 2009-09-24 |
WO2006079576A2 (de) | 2006-08-03 |
TW200628630A (en) | 2006-08-16 |
JP2008528798A (ja) | 2008-07-31 |
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