JP4869471B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4869471B2
JP4869471B2 JP2000216690A JP2000216690A JP4869471B2 JP 4869471 B2 JP4869471 B2 JP 4869471B2 JP 2000216690 A JP2000216690 A JP 2000216690A JP 2000216690 A JP2000216690 A JP 2000216690A JP 4869471 B2 JP4869471 B2 JP 4869471B2
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substrate
film
adhesive layer
fixed substrate
manufacturing
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JP2002033464A (ja
JP2002033464A5 (enrdf_load_stackoverflow
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舜平 山崎
徹 高山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Shift Register Type Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000216690A 2000-07-17 2000-07-17 半導体装置の作製方法 Expired - Fee Related JP4869471B2 (ja)

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JP2000216690A JP4869471B2 (ja) 2000-07-17 2000-07-17 半導体装置の作製方法

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JP2000216690A JP4869471B2 (ja) 2000-07-17 2000-07-17 半導体装置の作製方法

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JP2009181192A Division JP5147794B2 (ja) 2009-08-04 2009-08-04 表示装置の作製方法及び電子書籍の作製方法

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JP2002033464A JP2002033464A (ja) 2002-01-31
JP2002033464A5 JP2002033464A5 (enrdf_load_stackoverflow) 2007-07-26
JP4869471B2 true JP4869471B2 (ja) 2012-02-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017115225A3 (en) * 2015-12-28 2017-08-10 Semiconductor Energy Laboratory Co., Ltd. Flexible device, display device, and manufacturing methods thereof
KR101930140B1 (ko) * 2015-12-11 2018-12-17 가부시키가이샤 스크린 홀딩스 전자 디바이스의 제조 방법 및 적층체

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JP4727024B2 (ja) * 2000-07-17 2011-07-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN100391004C (zh) 2002-10-30 2008-05-28 株式会社半导体能源研究所 半导体装置以及半导体装置的制作方法
WO2004040649A1 (ja) 2002-11-01 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
KR101005569B1 (ko) 2002-12-27 2011-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조방법
KR101028394B1 (ko) 2002-12-27 2011-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법, 광전변환소자의 제조방법, 발광장치의 제조방법, 센서의 제조방법, 및 전자북 리더의 표시부의 제조방법
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
WO2004064018A1 (ja) * 2003-01-15 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. 剥離方法及びその剥離方法を用いた表示装置の作製方法
JP4529414B2 (ja) * 2003-10-29 2010-08-25 セイコーエプソン株式会社 電気光学装置用基板の製造方法
JP2005308975A (ja) * 2004-04-20 2005-11-04 Nippon Electric Glass Co Ltd ディスプレイ基板
KR101272097B1 (ko) 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
JP2007286600A (ja) * 2006-03-22 2007-11-01 Nippon Denki Kagaku Co Ltd 薄膜素子の転写方法、転写体、転写生成物、回路基板及び表示装置
JP2007288148A (ja) * 2006-03-22 2007-11-01 Nippon Denki Kagaku Co Ltd 薄膜素子の転写方法、転写体、転写生成物、回路基板及び表示装置
JP4610515B2 (ja) * 2006-04-21 2011-01-12 株式会社半導体エネルギー研究所 剥離方法
JP2008072087A (ja) * 2006-08-16 2008-03-27 Kyoto Univ 半導体装置および半導体装置の製造方法、ならびに表示装置
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2008243840A (ja) * 2007-03-23 2008-10-09 Nippon Denki Kagaku Co Ltd 薄膜素子の転写方法
JP5408848B2 (ja) 2007-07-11 2014-02-05 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP5205122B2 (ja) * 2008-05-02 2013-06-05 ローム株式会社 有機半導体装置の製造方法及び素子基板
JP2010032768A (ja) 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
US9741309B2 (en) * 2009-01-22 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device including first to fourth switches
JP2010256930A (ja) * 2010-07-22 2010-11-11 Nippon Electric Glass Co Ltd ディスプレイ基板
JP2013080857A (ja) * 2011-10-05 2013-05-02 Dainippon Printing Co Ltd 固体素子を有するデバイスの製造方法
JP2013175285A (ja) * 2012-02-23 2013-09-05 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
JP5577373B2 (ja) * 2012-04-16 2014-08-20 株式会社半導体エネルギー研究所 発光装置
JP2014093510A (ja) * 2012-11-07 2014-05-19 Fujifilm Corp 電子デバイスの製造方法および該製造方法に用いられる積層体
KR102516162B1 (ko) 2013-12-02 2023-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
KR102354008B1 (ko) * 2014-05-29 2022-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기
KR20160130004A (ko) 2015-04-30 2016-11-10 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP6608732B2 (ja) * 2016-03-01 2019-11-20 株式会社ディスコ ウエーハの加工方法
JP6297654B2 (ja) * 2016-09-29 2018-03-20 株式会社半導体エネルギー研究所 発光装置
JP6744479B2 (ja) * 2017-03-31 2020-08-19 シャープ株式会社 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置
KR102435985B1 (ko) * 2017-12-13 2022-08-24 삼성디스플레이 주식회사 표시 장치 및 이의 재작업 방법
WO2019157722A1 (zh) * 2018-02-14 2019-08-22 深圳市柔宇科技有限公司 柔性电子装置及其柔性基板
JP7097717B2 (ja) * 2018-02-26 2022-07-08 株式会社カネカ フレキシブル基板形成用支持基板およびその再生方法、ならびにフレキシブル基板の製造方法
CN110783253B (zh) * 2019-10-31 2022-05-24 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板和显示装置

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JPS63107073A (ja) * 1986-06-26 1988-05-12 Matsushita Electric Ind Co Ltd 薄膜太陽電池の製造法
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP2000196243A (ja) * 1998-12-28 2000-07-14 Fujitsu Ltd フレキシブル多層回路基板の製造方法
JP2000243943A (ja) * 1999-02-23 2000-09-08 Seiko Epson Corp 半導体装置の製造方法
JP2001267578A (ja) * 2000-03-17 2001-09-28 Sony Corp 薄膜半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101930140B1 (ko) * 2015-12-11 2018-12-17 가부시키가이샤 스크린 홀딩스 전자 디바이스의 제조 방법 및 적층체
WO2017115225A3 (en) * 2015-12-28 2017-08-10 Semiconductor Energy Laboratory Co., Ltd. Flexible device, display device, and manufacturing methods thereof
US10861917B2 (en) 2015-12-28 2020-12-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a flexible device having transistors

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