JP4860021B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4860021B2
JP4860021B2 JP2000002622A JP2000002622A JP4860021B2 JP 4860021 B2 JP4860021 B2 JP 4860021B2 JP 2000002622 A JP2000002622 A JP 2000002622A JP 2000002622 A JP2000002622 A JP 2000002622A JP 4860021 B2 JP4860021 B2 JP 4860021B2
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Japan
Prior art keywords
film
insulating film
semiconductor layer
wiring
region
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Expired - Fee Related
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JP2000002622A
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English (en)
Japanese (ja)
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JP2000269512A (ja
JP2000269512A5 (enExample
Inventor
舜平 山崎
潤 小山
寛 柴田
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000002622A priority Critical patent/JP4860021B2/ja
Publication of JP2000269512A publication Critical patent/JP2000269512A/ja
Publication of JP2000269512A5 publication Critical patent/JP2000269512A5/ja
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Publication of JP4860021B2 publication Critical patent/JP4860021B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000002622A 1999-01-11 2000-01-11 半導体装置の作製方法 Expired - Fee Related JP4860021B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000002622A JP4860021B2 (ja) 1999-01-11 2000-01-11 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999004761 1999-01-11
JP11-4761 1999-01-11
JP476199 1999-01-11
JP2000002622A JP4860021B2 (ja) 1999-01-11 2000-01-11 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000269512A JP2000269512A (ja) 2000-09-29
JP2000269512A5 JP2000269512A5 (enExample) 2007-03-01
JP4860021B2 true JP4860021B2 (ja) 2012-01-25

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JP2000002622A Expired - Fee Related JP4860021B2 (ja) 1999-01-11 2000-01-11 半導体装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP3961240B2 (ja) * 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100699987B1 (ko) * 2001-08-06 2007-03-26 삼성에스디아이 주식회사 높은 캐패시턴스를 갖는 평판표시소자 및 그의 제조방법
US7285459B2 (en) 2001-08-06 2007-10-23 Samsung Sdi Co., Ltd. Flat panel display with high capacitance and method of manufacturing the same
US6756608B2 (en) * 2001-08-27 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR100929666B1 (ko) * 2002-01-03 2009-12-03 삼성전자주식회사 액정 표시 장치 및 그 제조 방법
JP5105690B2 (ja) * 2002-03-26 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6853052B2 (en) 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US7994000B2 (en) 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5477303B2 (ja) * 2011-01-12 2014-04-23 信越化学工業株式会社 太陽電池の製造方法
JP5613717B2 (ja) * 2012-04-25 2014-10-29 株式会社半導体エネルギー研究所 半導体装置、モジュール及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06130413A (ja) * 1992-10-14 1994-05-13 Seiko Epson Corp 液晶表示装置の製造方法
JPH09191111A (ja) * 1995-11-07 1997-07-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH09289165A (ja) * 1996-02-23 1997-11-04 Semiconductor Energy Lab Co Ltd 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JPH09298304A (ja) * 1996-05-08 1997-11-18 Semiconductor Energy Lab Co Ltd 液晶表示装置の製造方法および半導体装置の製造方法
JP4024341B2 (ja) * 1997-04-25 2007-12-19 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2000269512A (ja) 2000-09-29

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