JP4858743B2 - 粒子光学静電レンズ - Google Patents
粒子光学静電レンズ Download PDFInfo
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- JP4858743B2 JP4858743B2 JP2004281985A JP2004281985A JP4858743B2 JP 4858743 B2 JP4858743 B2 JP 4858743B2 JP 2004281985 A JP2004281985 A JP 2004281985A JP 2004281985 A JP2004281985 A JP 2004281985A JP 4858743 B2 JP4858743 B2 JP 4858743B2
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- 230000003287 optical effect Effects 0.000 title claims description 41
- 239000002245 particle Substances 0.000 title claims description 40
- 230000005291 magnetic effect Effects 0.000 claims description 36
- 230000035699 permeability Effects 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 9
- 238000005421 electrostatic potential Methods 0.000 claims description 6
- 230000007613 environmental effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- FEPMHVLSLDOMQC-UHFFFAOYSA-N virginiamycin-S1 Natural products CC1OC(=O)C(C=2C=CC=CC=2)NC(=O)C2CC(=O)CCN2C(=O)C(CC=2C=CC=CC=2)N(C)C(=O)C2CCCN2C(=O)C(CC)NC(=O)C1NC(=O)C1=NC=CC=C1O FEPMHVLSLDOMQC-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005358 geomagnetic field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002039 particle-beam lithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
Description
S=(1−ri2/ra2)・μ/4
である。
S(2)=1+S1+S2+S1・S2・N
但し、S1=(1−ril2/ral2)・μ1/4は、透磁率μ1を有する材料から作られる内側シールド・チューブSTiのシールド係数であり、S2=(1−ri22/ra22)・μ2/4は、透磁率μ2を有する材料から作られる外側シールド・チューブSTaのシールド係数であり、そして幾何学的係数
N=1−ra12/ri22
は、二つのシールドSTi,STaの間の間隔を考慮している。
11 電子銃
12 抽出系
13 コンデンサー・レンズ系
20 パターン定義系
21 パターン定義装置
30 投影系
31 界浸レンズ
32 磁気レンズ
40 対象場所
41 基板
42 ウェーハー・ステージ
100 荷電粒子ビーム・リソグラフィー装置
105 真空ハウジング
E1,E2,EFR,EM,EM’,EFN 電極
ML マルチ電極レンズ
OR,OR’ 外側部材リング
IR,IR’ 内側部材リング
s1,s2 肩部
MSD,MS シールド層
STi 内側シールド・チューブ
STa 外側シールド・チューブ
Claims (12)
- 回転対称性を持ち、それぞれ荷電粒子ビームの粒子ビーム光路を取り囲む中央開口を有する少なくとも3つの電極を備えており、これらの電極は、前記粒子ビーム光路の中心をあらわす共通の光軸上に同軸的に配置され、且つ前記電極にそれぞれ異なる静電電位を供給するための給電系が設けられている、荷電粒子ビーム露光装置における静電レンズ(ML)において、
前記少なくとも3つの電極は、前記光軸に沿って連続的に整列して配置された実質的に同等の形状の一連の電極として具現される電極列を含み、前記電極列の各電極(EM)は、外側部分(OR)と、前記光軸に向かって位置する内側部分(IR)とを含み、
前記電極列の前記電極(EM)の外側部分(OR)は、次および前の電極に向かって、それぞれ対峙している対応する対向面(f1,f2)を有し、
前記内側部分(IR)は前記外側部分(OR)と一体であり、前記内側部分が前記外側部分と接続部によって結合され、前記光軸と平行に測定したときの当該接続部の厚さは、対応する対向面(f1,f2)間で測定した前記外側部分の厚さよりも小さいことを特徴とする静電レンズ。 - 前記内側部分(IR)は、前記光軸と平行に測定したとき、前記接続部の厚さよりも大きな厚さを有する部分を含むことを特徴とする請求項1に記載の静電レンズ。
- 前記内側部分(IR)の厚さは、前記光軸からの距離が増加するのに応じて増加することを特徴とする請求項1または請求項2に記載の静電レンズ。
- 前記電極列の前記電極(EM)は、環境条件において100よりも大きい透磁率を有する軟磁性材料から、少なくとも部分的に、作られている請求項1から請求項3のうちのいずれか一項に記載の静電レンズ。
- 前記透磁率は、300よりも大きい請求項4に記載の静電レンズ。
- 前記電極列を取り囲み且つ前記光軸の方向に沿って少なくとも前記電極列の長さを超えて延びる軟磁性材料から作られる磁気シールド・チューブ(MS)をさらに備える請求項1から請求項5のうちのいずれか一項に記載の静電レンズ。
- 前記電極列の各電極(EM)は、それぞれ、次および前の電極に向かって対峙する対応する対向面(f1,f2)を有する円筒形状を持つ外側部材リング(OR)として形成される外側部分を備え、且つ前記光軸に向けられた円環状縁部(cd)を有する内側部材リング(IR)をさらに備える請求項1から請求項6のうちのいずれか一項に記載の静電レンズ。
- 前記内側部材リング(IR)は、前記円環状縁部(cd)から外方に延びるとともに、前記荷電粒子ビームが前記電極列に入る方向に向かって対峙する凹面(cv)が設けられている請求項7に記載の静電レンズ。
- 全ての電極の外側半径は、当該レンズ内の前記粒子ビーム光路の最大半径の5倍よりも大きくない請求項1から請求項8のうちのいずれか一項に記載の静電レンズ。
- 隣接する電極の対向面の間にギャップが存在し、該ギャップの幅は、当該荷電粒子ビーム露光装置における残留ガスの電気的特性を考慮してそれぞれの電極の間の最大許容電圧に従って選定される請求項1から請求項9のうちのいずれか一項に記載の静電レンズ。
- 前記電極列の長さは、前記面(f1,f2)の内側半径(ri1)の少なくとも4.1倍である請求項1から請求項10のうちのいずれか一項に記載の静電レンズ。
- 前記電極列の長さは、前記面(f1,f2)の内側半径(ri1)の少なくとも3倍である請求項1から請求項10のうちのいずれか一項に記載の静電レンズ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT15482003 | 2003-09-30 | ||
ATA1548/2003 | 2003-09-30 |
Publications (2)
Publication Number | Publication Date |
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JP2005108842A JP2005108842A (ja) | 2005-04-21 |
JP4858743B2 true JP4858743B2 (ja) | 2012-01-18 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2004281985A Active JP4858743B2 (ja) | 2003-09-30 | 2004-09-28 | 粒子光学静電レンズ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7199373B2 (ja) |
JP (1) | JP4858743B2 (ja) |
GB (1) | GB2406704B (ja) |
Families Citing this family (28)
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EP1753010B1 (en) | 2005-08-09 | 2012-12-05 | Carl Zeiss SMS GmbH | Particle-optical system |
EP1777728A1 (en) * | 2005-10-20 | 2007-04-25 | Carl Zeiss SMS GmbH | Lithography system |
JP2009181819A (ja) * | 2008-01-31 | 2009-08-13 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
KR101357957B1 (ko) | 2012-02-23 | 2014-02-05 | 선문대학교 산학협력단 | 어퍼쳐 주위에 볼록부 또는 오목부를 구비하는 정전 전극 |
US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
EP2852966A1 (en) | 2012-05-14 | 2015-04-01 | Mapper Lithography IP B.V. | Charged particle lithography system and beam generator |
US10586625B2 (en) | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
JP6271852B2 (ja) * | 2013-03-29 | 2018-01-31 | 株式会社荏原製作所 | 電子線応用装置の鏡筒部へ真空ポンプを接続する真空ポンプ用接続装置、及び該接続装置の設置方法 |
EP2913838B1 (en) | 2014-02-28 | 2018-09-19 | IMS Nanofabrication GmbH | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
US20150311031A1 (en) | 2014-04-25 | 2015-10-29 | Ims Nanofabrication Ag | Multi-Beam Tool for Cutting Patterns |
US9443699B2 (en) | 2014-04-25 | 2016-09-13 | Ims Nanofabrication Ag | Multi-beam tool for cutting patterns |
EP2950325B1 (en) | 2014-05-30 | 2018-11-28 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using overlapping exposure spots |
JP6890373B2 (ja) | 2014-07-10 | 2021-06-18 | アイエムエス ナノファブリケーション ゲーエムベーハー | 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償 |
US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
CN104576286A (zh) * | 2014-12-31 | 2015-04-29 | 同方威视技术股份有限公司 | 用于离子迁移谱仪的电极环、离子迁移管、离子迁移谱仪 |
US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
EP3096342B1 (en) | 2015-03-18 | 2017-09-20 | IMS Nanofabrication AG | Bi-directional double-pass multi-beam writing |
US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
US20230052445A1 (en) * | 2021-08-12 | 2023-02-16 | Ims Nanofabrication Gmbh | Beam Pattern Device Having Beam Absorber Structure |
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-
2004
- 2004-09-22 GB GB0421004A patent/GB2406704B/en active Active
- 2004-09-27 US US10/951,087 patent/US7199373B2/en active Active
- 2004-09-28 JP JP2004281985A patent/JP4858743B2/ja active Active
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Publication number | Publication date |
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GB2406704B (en) | 2007-02-07 |
JP2005108842A (ja) | 2005-04-21 |
GB2406704A (en) | 2005-04-06 |
US20050072933A1 (en) | 2005-04-07 |
GB0421004D0 (en) | 2004-10-20 |
US7199373B2 (en) | 2007-04-03 |
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