JP4858461B2 - タングステンシリサイド膜の形成方法及び半導体装置の製造方法 - Google Patents

タングステンシリサイド膜の形成方法及び半導体装置の製造方法 Download PDF

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Publication number
JP4858461B2
JP4858461B2 JP2008039913A JP2008039913A JP4858461B2 JP 4858461 B2 JP4858461 B2 JP 4858461B2 JP 2008039913 A JP2008039913 A JP 2008039913A JP 2008039913 A JP2008039913 A JP 2008039913A JP 4858461 B2 JP4858461 B2 JP 4858461B2
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tungsten silicide
dichlorosilane
dcs
silicon wafer
film
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JP2008187190A5 (https=
JP2008187190A (ja
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功二 伴
章伸 寺本
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Renesas Electronics Corp
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Renesas Electronics Corp
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JP2008039913A 2008-02-21 2008-02-21 タングステンシリサイド膜の形成方法及び半導体装置の製造方法 Expired - Lifetime JP4858461B2 (ja)

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JP2008039913A JP4858461B2 (ja) 2008-02-21 2008-02-21 タングステンシリサイド膜の形成方法及び半導体装置の製造方法

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JP2008039913A JP4858461B2 (ja) 2008-02-21 2008-02-21 タングステンシリサイド膜の形成方法及び半導体装置の製造方法

Related Parent Applications (1)

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JP10005520A Division JPH11200050A (ja) 1998-01-14 1998-01-14 タングステンシリサイド膜の形成方法、半導体装置の製造方法、及び半導体ウェーハ処理装置

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JP2008187190A JP2008187190A (ja) 2008-08-14
JP2008187190A5 JP2008187190A5 (https=) 2011-02-17
JP4858461B2 true JP4858461B2 (ja) 2012-01-18

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JP2008039913A Expired - Lifetime JP4858461B2 (ja) 2008-02-21 2008-02-21 タングステンシリサイド膜の形成方法及び半導体装置の製造方法

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07100860B2 (ja) * 1988-09-01 1995-11-01 日電アネルバ株式会社 タングステンシリサイド膜の形成方法
JPH05182925A (ja) * 1991-12-30 1993-07-23 Sony Corp 半導体装置の製造方法及び半導体装置の製造装置
JPH07111253A (ja) * 1993-08-20 1995-04-25 Hitachi Ltd シリサイド形成方法および半導体装置の製造方法
US5849629A (en) * 1995-10-31 1998-12-15 International Business Machines Corporation Method of forming a low stress polycide conductors on a semiconductor chip

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