JP4857010B2 - ビーム誘起エッチング - Google Patents

ビーム誘起エッチング Download PDF

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Publication number
JP4857010B2
JP4857010B2 JP2006105007A JP2006105007A JP4857010B2 JP 4857010 B2 JP4857010 B2 JP 4857010B2 JP 2006105007 A JP2006105007 A JP 2006105007A JP 2006105007 A JP2006105007 A JP 2006105007A JP 4857010 B2 JP4857010 B2 JP 4857010B2
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electron beam
chromium
etching
gas
compound
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Japanese (ja)
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JP2006293361A (ja
JP2006293361A5 (enExample
Inventor
トリスタン・ブレット
パトリック・ホフマン
ミッシェル・ロッシ
ザビエル・ムルトン
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エコール ポリテクニク フェデラル ドゥ ローザンヌ
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/02—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
JP2006105007A 2005-04-08 2006-04-06 ビーム誘起エッチング Active JP4857010B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/102,602 US7670956B2 (en) 2005-04-08 2005-04-08 Beam-induced etching
US11/102,602 2005-04-08

Publications (3)

Publication Number Publication Date
JP2006293361A JP2006293361A (ja) 2006-10-26
JP2006293361A5 JP2006293361A5 (enExample) 2009-05-21
JP4857010B2 true JP4857010B2 (ja) 2012-01-18

Family

ID=36675948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006105007A Active JP4857010B2 (ja) 2005-04-08 2006-04-06 ビーム誘起エッチング

Country Status (3)

Country Link
US (2) US7670956B2 (enExample)
EP (1) EP1710327B1 (enExample)
JP (1) JP4857010B2 (enExample)

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US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7833427B2 (en) * 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
JP5758577B2 (ja) * 2007-02-06 2015-08-05 エフ・イ−・アイ・カンパニー 高圧荷電粒子ビーム・システム
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JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
DE102017208114A1 (de) 2017-05-15 2018-05-03 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Teilchenstrahl-induzierten Ätzen einer photolithographischen Maske
KR102757231B1 (ko) * 2017-07-21 2025-01-21 칼 짜이스 에스엠티 게엠베하 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치
CN110923624B (zh) * 2019-12-13 2020-11-24 北京师范大学 一种基于离子束印刷系统的离子束印刷方法
DE102021206564A1 (de) * 2021-06-24 2022-12-29 Carl Zeiss Smt Gmbh Endpunktbestimmung durch induzierte desorption von gasen und analyse der wiederbedeckung
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Also Published As

Publication number Publication date
US7670956B2 (en) 2010-03-02
JP2006293361A (ja) 2006-10-26
US9909218B2 (en) 2018-03-06
US20100203431A1 (en) 2010-08-12
EP1710327A2 (en) 2006-10-11
EP1710327B1 (en) 2012-07-18
EP1710327A3 (en) 2007-11-14
US20060228634A1 (en) 2006-10-12

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