JP4847735B2 - Method for manufacturing piezoelectric device - Google Patents

Method for manufacturing piezoelectric device Download PDF

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JP4847735B2
JP4847735B2 JP2005317730A JP2005317730A JP4847735B2 JP 4847735 B2 JP4847735 B2 JP 4847735B2 JP 2005317730 A JP2005317730 A JP 2005317730A JP 2005317730 A JP2005317730 A JP 2005317730A JP 4847735 B2 JP4847735 B2 JP 4847735B2
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sealing
lid
conductor pattern
insulating base
insulating
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JP2007124595A (en
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利夫 中澤
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Kyocera Crystal Device Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Description

本発明は、携帯用通信機器や電子計算機等の電子機器に用いられる水晶振動子等の圧電デバイスの製造方法に関するものである。 The present invention relates to a method for manufacturing a piezoelectric device such as a crystal resonator used in an electronic device such as a portable communication device or an electronic computer.

従来から、携帯用通信機器等の電子機器の基準信号を発生させるのに圧電部品が用いられている。かかる従来の圧電部品としては、セラミック材料等から成る基体上にシールリングを取着させるとともに、先のシールリングの内側に位置する基体の上面に、圧電振動素子としての水晶振動素子を、その一端側でのみ保持する形で搭載し、更に前記シールリング上に金属製の蓋体を載置・固定することにより水晶振動素子を気密封止した構造のものが知られている(例えば、特許文献1参照)。       Conventionally, piezoelectric components have been used to generate reference signals for electronic devices such as portable communication devices. As such a conventional piezoelectric component, a seal ring is attached on a base made of a ceramic material or the like, and a quartz crystal vibration element as a piezoelectric vibration element is provided on the upper surface of the base located inside the previous seal ring. There is known a structure in which a quartz vibrating element is hermetically sealed by mounting and fixing a metal lid on the seal ring and holding the metal lid on the seal ring (for example, Patent Documents) 1).

また、上記圧電デバイスは、バッチ処理により製造した複数の絶縁基体51を、キャビティを上向きにしてトレイ状の搬送治具上に縦横に配列し、個々の絶縁基体に対して水晶振動素子52をマウントしてから蓋体53により気密封止するという手順にて製造される。絶縁基体51のキャビティの内底面には2つの搭載電極が配置されており、絶縁基体51の搭載電極に対して水晶振動素子52を搭載する。この絶縁基体51と蓋体53を気密封止する方法としては、接合材である金錫(Au−Sn)ロウ材を溶融させる方法がある。溶融させる手段としては、カーボン治具に収納したまま、封止炉に入れ真空雰囲気内で加熱する方法や、ハロゲンビームにより接合材を溶融させて接合する方法が知られている。       In the piezoelectric device, a plurality of insulating bases 51 manufactured by batch processing are arranged vertically and horizontally on a tray-like transport jig with the cavities facing upward, and crystal resonator elements 52 are mounted on the individual insulating bases. Then, it is manufactured by the procedure of hermetically sealing with the lid 53. Two mounting electrodes are arranged on the inner bottom surface of the cavity of the insulating base 51, and the crystal resonator element 52 is mounted on the mounting electrode of the insulating base 51. As a method of hermetically sealing the insulating base 51 and the lid 53, there is a method of melting a gold tin (Au—Sn) brazing material as a bonding material. As melting means, there are known a method of heating in a vacuum atmosphere while being stored in a carbon jig, and a method of melting and bonding a bonding material with a halogen beam.

特開2002―111435号公報 (第5−6頁、図2)JP 2002-111435 A (Page 5-6, FIG. 2) 特開2000−22013号公報 (第7頁、3図)Japanese Unexamined Patent Publication No. 2000-22013 (page 7, figure 3) 特開平9−246414号公報Japanese Patent Laid-Open No. 9-246414

なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を本件出願時までに発見するに至らなかった。       In addition, the applicant did not find any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

しかしながら、上述した従来の圧電デバイスにおいては、接合材を溶融することによって気密封止を行っているが、封止時に蓋体と絶縁基体との間隔が少し空いていることにより、接合材が濡れ広がらずに封止不良になることや、蓋体がずれて接合してしまうおそれがあるという欠点を有していた。       However, in the above-described conventional piezoelectric device, the sealing material is hermetically sealed by melting the bonding material. However, the bonding material is wet because the gap between the lid and the insulating base is slightly spaced at the time of sealing. It has the disadvantages that sealing does not spread and the lid body may be displaced and bonded.

また、個片の絶縁基体と個片の蓋体とを事前に準備してから圧電デバイスを組み立てる場合、複数個の絶縁基体を個々にキャリアに保持させる作業が必要となり、またキャリアに保持させた個々の絶縁基体上には蓋体を個々に位置合わせをして取り付けなければならず、これによっても水晶振動子の組み立て工程が煩雑になる欠点を有していた。       Also, when assembling a piezoelectric device after preparing the individual insulating base and the individual lid in advance, it is necessary to hold the plurality of insulating bases individually on the carrier, and the carrier is held on the carrier. The lids had to be individually aligned and mounted on the individual insulating substrates, and this also had the disadvantage that the assembly process of the crystal resonator was complicated.

本発明は、上述の欠点に鑑み案出されたもので、その目的は、蓋体と絶縁基体とを安定して接合すると共に、その生産性を著しく向上させた圧電デバイスの製造方法を提供することにある。 The present invention has been devised in view of the aforementioned drawbacks, and its object is adapted to stably bond the lid and the insulating substrate, a manufacturing how the piezoelectric device having improved significantly the productivity There is to do.

本発明の圧電デバイスの製造方法は、封止用導体パターンが設けられた絶縁基体を台座部と加熱源部から成る封止装置上に載置する工程Aと、前記絶縁基体に圧電振動素子を搭載し、蓋体を前記絶縁基体の封止用導体パターン上に、前記蓋体に設けられた封止材が前記封止用導体パターンに接するように配置する工程Bと、前記蓋体に前記加熱源部から熱線が照射され前記封止材が溶融されて、前記絶縁基体の封止用導体パターンに接合される時に、前記封止装置の台座部に備えられた電磁石により、前記蓋体を前記台座部側に引き付けて前記絶縁基体と密着させると共に、前記電磁石のON/OFFを繰り返すことにより前記台座部に振動を加えながら、前記封止材と前記封止用導体パターンとを接合する工程Cから成ることを特徴とするものである。 The method for manufacturing a piezoelectric device according to the present invention includes a step A of placing an insulating base provided with a sealing conductor pattern on a sealing device including a pedestal portion and a heating source, and a piezoelectric vibration element on the insulating base. And mounting the lid body on the sealing conductor pattern of the insulating base so that a sealing material provided on the lid body is in contact with the sealing conductor pattern ; and When the sealing material is melted by being irradiated with heat rays from a heating source part and joined to the sealing conductor pattern of the insulating base , the lid is removed by an electromagnet provided on the base part of the sealing device. A process of joining the sealing material and the sealing conductor pattern while applying vibration to the pedestal portion by attracting it to the pedestal portion side so as to be in close contact with the insulating base and repeating ON / OFF of the electromagnet. Characterized by comprising C Than is.

本発明の圧電デバイスの製造方法によれば、蓋体を絶縁基体の封止用導体パターンに接合すると共に、接合時に蓋体を絶縁基体に密着させることによって、封止用導体パターンへの封止材の濡れ広がりを促進することが可能となる。       According to the method for manufacturing a piezoelectric device of the present invention, the lid is bonded to the sealing conductor pattern of the insulating base, and the lid is brought into close contact with the insulating base at the time of bonding, thereby sealing to the sealing conductor pattern. It becomes possible to promote the wetting and spreading of the material.

また、本発明の圧電デバイスの製造方法によれば、工程Cにおいて、電磁石を用いることによって、絶縁基体の底面側、若しくは蓋体側が磁力によって固定されるので、蓋体と絶縁基体との接合時における位置ずれを防止することが可能となる。       According to the method for manufacturing a piezoelectric device of the present invention, in step C, the bottom surface side or the lid side of the insulating base is fixed by magnetic force by using an electromagnet. It is possible to prevent the positional deviation at.

また、本発明の圧電デバイスの製造方法によれば、工程Cにおいて、振動装置を用いることによって、絶縁基体の底面側、若しくは蓋体側に振動を加えるので、蓋体と絶縁基体の封止用導体パターンを密着させ封止用導体パターンへの封止材の濡れ広がりを促進することが可能となる。       Further, according to the method for manufacturing a piezoelectric device of the present invention, in step C, vibration is applied to the bottom surface side or the lid body side of the insulating base by using the vibration device. It is possible to promote the wetting and spreading of the sealing material to the conductive pattern for sealing by bringing the pattern into close contact.

また、本発明の圧電デバイスの製造方法によれば、絶縁基体が複数形成されているマスター基板を用いることによって、圧電デバイスの組み立てに際して、マスター基板そのものがキャリアとして機能するようになっていることから、マスター基板より分割した個片を個々にキャリアに保持させ、或いは、各個片に蓋体を個々に取り付けるといった煩雑な作業は一切不要となる。これにより、圧電デバイスの組み立て工程が大幅に簡素化されるようになり、圧電デバイスの生産性向上に供することが可能となる。       Further, according to the method for manufacturing a piezoelectric device of the present invention, by using a master substrate on which a plurality of insulating bases are formed, the master substrate itself functions as a carrier when the piezoelectric device is assembled. The complicated work of holding the individual pieces divided from the master substrate individually on the carrier or attaching the lid to each individual piece becomes unnecessary. As a result, the assembly process of the piezoelectric device is greatly simplified, and it is possible to improve the productivity of the piezoelectric device.

また、本発明の圧電デバイスの製造方法によれば、絶縁基体の加熱手段に向いていない側に、蓋体を絶縁基体に密着させることによって、蓋体と絶縁基体の封止用導体パターンを密着させるので、封止用導体パターンへの封止材の濡れ広がりを促進することが可能となる。       In addition, according to the method for manufacturing a piezoelectric device of the present invention, the lid and the insulating substrate sealing conductor pattern are in close contact with the insulating base on the side of the insulating base that is not suitable for the heating means. Therefore, it becomes possible to promote the wetting and spreading of the sealing material to the sealing conductor pattern.

また、本発明の圧電デバイスの製造方法によれば、蓋体を絶縁基体に密着させる電磁石を用いることによって、絶縁基体の底面側若しくは蓋体側が磁力によって固定されるので、蓋体と絶縁基体との接合時における位置ずれを防止することが可能となる。       Further, according to the method for manufacturing a piezoelectric device of the present invention, the bottom surface side or the lid body side of the insulating base is fixed by magnetic force by using the electromagnet that closely attaches the lid to the insulating base. It is possible to prevent the positional deviation at the time of joining.

また、本発明の圧電デバイスの製造方法によれば、蓋体を絶縁基体に密着させる手段として振動装置を用いることによって、蓋体と絶縁基体の封止用導体パターンを密着させるので、封止用導体パターンへの封止材の濡れ広がりを促進することが可能となる。       Further, according to the method for manufacturing a piezoelectric device of the present invention, since the vibrating device is used as means for bringing the lid into close contact with the insulating base, the sealing conductor pattern of the lid and insulating base is brought into close contact. It becomes possible to promote the wetting and spreading of the sealing material to the conductor pattern.

以下、本発明を添付図面に基づいて詳細に説明する。図1は本発明の製造方法を水晶振動子の製造に適用した場合の水晶振動子を斜め上方からみた概略の分解斜視図である。図1に示す水晶振動子は、大略的に、絶縁基体1と圧電振動素子としての水晶振動素子2と蓋体3とで構成されている。       Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a schematic exploded perspective view of a crystal resonator viewed obliquely from above when the manufacturing method of the present invention is applied to the manufacture of a crystal resonator. The crystal resonator shown in FIG. 1 is generally composed of an insulating base 1, a crystal resonator element 2 as a piezoelectric resonator element, and a lid 3.

絶縁基体1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成る絶縁層を積層して形成されており、その上面には一対の搭載パッド6と水晶振動素子2の搭載領域を囲繞する封止用導体パターン4とが設けられ、また下面には入力端子、出力端子、グランド端子等の外部端子5が設けられている。       The insulating substrate 1 is formed by laminating an insulating layer made of a ceramic material such as glass-ceramic or alumina ceramic, and surrounds a mounting area for the pair of mounting pads 6 and the crystal resonator element 2 on the upper surface thereof. A sealing conductor pattern 4 is provided, and an external terminal 5 such as an input terminal, an output terminal, and a ground terminal is provided on the lower surface.

かかる絶縁基体1に設けられている一対の搭載パッド6は、その上面側で水晶振動素子2の振動電極に導電性接着材を介して電気的に接続され、下面側で絶縁基体1上の導体パターンや絶縁基体内部のビア導体等を介して絶縁基体下面の入出力端子(入力端子、出力端子)に電気的に接続される。       The pair of mounting pads 6 provided on the insulating base 1 are electrically connected to the vibrating electrodes of the crystal resonator element 2 on the upper surface side via a conductive adhesive, and the conductors on the insulating base 1 on the lower surface side. It is electrically connected to an input / output terminal (input terminal, output terminal) on the lower surface of the insulating substrate via a pattern, a via conductor inside the insulating substrate, or the like.

また、前記絶縁基体上面の封止用導体パターン4は、例えば、タングステン(W)、モリブデン(Mo)等から成る基層の表面にニッケル(Ni)層、及び金(Au)層を順次被着させることによって10μm〜25μmの厚みに形成されており、その内周部は凹部7の内壁面に、外周部は基体1の外側面にそれぞれ延在されている。前記封止用導体パターン4は、後述する蓋体3を、接合材8を介して絶縁基体1の上面に接合させる為のものであり、かかる封止用導体パターン4を、上述したように、WもしくはMoから成る基層の表面にNi層及びAu層を順次被着させた構成としておくことにより、封止用導体パターン4に対する接合材8の濡れ性を良好とし、圧電デバイスの信頼性及び生産性を著しく向上させることができる。なお、上述した外部端子5は、水晶振動子をマザーボード等の外部電気回路に搭載する際、外部電気回路の回路配線と半田等の導電性接着材を介して電気的に接続されることとなる。       The sealing conductor pattern 4 on the upper surface of the insulating base is formed by sequentially depositing a nickel (Ni) layer and a gold (Au) layer on the surface of a base layer made of, for example, tungsten (W), molybdenum (Mo) or the like. Thus, the inner peripheral portion extends to the inner wall surface of the recess 7 and the outer peripheral portion extends to the outer surface of the base body 1. The sealing conductor pattern 4 is for bonding a lid 3 to be described later to the upper surface of the insulating substrate 1 through a bonding material 8, and the sealing conductor pattern 4 is, as described above, By adopting a structure in which a Ni layer and an Au layer are sequentially deposited on the surface of a base layer made of W or Mo, the wettability of the bonding material 8 to the sealing conductor pattern 4 is improved, and the reliability and production of the piezoelectric device Property can be remarkably improved. The external terminal 5 described above is electrically connected to the circuit wiring of the external electric circuit via a conductive adhesive such as solder when the crystal resonator is mounted on an external electric circuit such as a mother board. .

また、上述した絶縁基体1の上面に搭載される水晶振動素子2は、所定の結晶軸でカットした、厚みが大よそ30μm〜160μmの水晶片の両主面に一対の振動電極(図示せず)を被着・形成して成り、外部からの変動電圧が一対の振動電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こすようになっている。このような水晶振動素子2は、その両主面に被着されている振動電極と絶縁基体上面の対応する搭載パッド6とを導電性接着材9を介して電気的・機械的に接続することによって絶縁基体上面の所定位置に搭載される。       Further, the crystal resonator element 2 mounted on the upper surface of the insulating base 1 described above has a pair of vibration electrodes (not shown) on both main surfaces of a crystal piece having a thickness of approximately 30 μm to 160 μm cut along a predetermined crystal axis. ), And when a variable voltage from the outside is applied to the crystal piece via a pair of vibrating electrodes, thickness shear vibration is caused at a predetermined frequency. Such a quartz crystal resonator element 2 is electrically and mechanically connected via a conductive adhesive 9 to the vibrating electrodes attached to both main surfaces thereof and the corresponding mounting pads 6 on the upper surface of the insulating substrate. Is mounted at a predetermined position on the upper surface of the insulating substrate.

蓋体3は、従来周知の金属加工法を採用し、42アロイ等の金属を所定形状に成形することによって製作される。先の蓋体3の上面には、ニッケル(Ni)層が形成され、更にニッケル(Ni)層の上面に、封止材8であるクラッド化された金錫(Au−Sn)層が形成される。クラッド化された金錫(Au−Sn)層の厚みは10μm〜30μmである。例えば、成分比率で、金が80%、錫が20%のものが使用されている       The lid 3 is manufactured by adopting a conventionally known metal processing method and molding a metal such as 42 alloy into a predetermined shape. A nickel (Ni) layer is formed on the upper surface of the lid 3, and a clad gold-tin (Au—Sn) layer as the sealing material 8 is further formed on the upper surface of the nickel (Ni) layer. The The thickness of the clad gold-tin (Au—Sn) layer is 10 μm to 30 μm. For example, the component ratio is 80% gold and 20% tin.

次に上述した圧電デバイスの製造方法について図3を用いて説明する。ここで、図3(a)〜(c)は本発明の製造方法を説明するため斜め上方からみた斜視図である。
(工程A)
マスター基板10は、図3(a)に示すように、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料からなる矩形状の平板状基板が2層積層され、さらにセラミック材料からなるマトリクス状、即ち、縦m列×横n行の行列状に配置された多数の矩形状の孔を有する基板を積層して形成されており、マトリクス状に配置された前記の孔を中心に有する個々の基板領域には、上面側に凹部底面の一対の搭載パッド6と開口周縁を囲む封止用導体パターン4が被着・形成され、下面側には入出力端子やグランド端子等の外部端子5が被着・形成されている。また、マトリクス状に配された基板領域の間に所定の捨代領域が設けられている。このようなマスター基板10は、例えば、アルミナセラミックス等から成るセラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に搭載パッド6や外部端子5、封止用導体パターン4等となる導体ペーストを所定パターンに印刷・塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することによって製作される。
Next, a manufacturing method of the above-described piezoelectric device will be described with reference to FIG. Here, FIGS. 3A to 3C are perspective views as seen from obliquely above for explaining the manufacturing method of the present invention.
(Process A)
As shown in FIG. 3A, the master substrate 10 is formed by laminating two layers of rectangular flat plates made of a ceramic material such as glass-ceramic and alumina ceramic, and in a matrix shape made of a ceramic material. Each substrate region is formed by laminating a plurality of substrates having a plurality of rectangular holes arranged in a matrix of m columns × n rows, and having the holes arranged in a matrix at the center. A pair of mounting pads 6 on the bottom surface of the recess and a sealing conductor pattern 4 surrounding the periphery of the opening are deposited and formed on the upper surface side, and external terminals 5 such as input / output terminals and ground terminals are deposited on the lower surface side.・ It is formed. In addition, a predetermined margin area is provided between the substrate areas arranged in a matrix. Such a master substrate 10 includes, for example, a mounting pad 6, an external terminal 5, and a sealing material on the surface of a ceramic green sheet obtained by adding and mixing a suitable organic solvent to a ceramic material powder made of alumina ceramic or the like. It is manufactured by printing and applying a conductor paste to be a conductor pattern 4 or the like in a predetermined pattern, laminating a plurality of these, press molding, and firing at a high temperature.

(工程B)
前記マスター基板10は、矩形状の基板領域を相互に隣接させて複数個ずつ配置させてなり、その一主面側には、水晶振動素子2を搭載する。水晶振動素子2は、所定の結晶軸でカットした水晶片の両主面に一対の振動電極を被着・形成して成り、外部からの変動電圧が一対の振動電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こす。また、マスター基板10の各基板領域の凹部底面には水晶振動素子2が1個ずつ搭載され、水晶振動素子2の振動電極とマスター基板上面の搭載パッド6とが導電性接着剤9を介して電気的・機械的に接続される。
(Process B)
The master substrate 10 is formed by arranging a plurality of rectangular substrate regions adjacent to each other, and the crystal resonator element 2 is mounted on one main surface side thereof. The quartz resonator element 2 is formed by depositing and forming a pair of vibrating electrodes on both main surfaces of a quartz piece cut along a predetermined crystal axis, and an external fluctuation voltage is applied to the quartz piece via the pair of vibrating electrodes. Then, thickness shear vibration is caused at a predetermined frequency. Further, one crystal resonator element 2 is mounted on the bottom surface of the concave portion of each substrate region of the master substrate 10, and the vibration electrode of the crystal resonator element 2 and the mounting pad 6 on the upper surface of the master substrate are interposed via the conductive adhesive 9. Electrically and mechanically connected.

次に水晶振動素子2が搭載されているマスター基板の基板領域の上面に形成された封止用導体パターン4に対応して、蓋体3を、水晶振動素子2が封止されるようにして、載置・接合する。なお、蓋体3は、従来周知の金属加工法を採用し、42アロイ等の金属を所定形状に成形することによって製作される。前記蓋体3の上面には、ニッケル(Ni)層が形成され、更にニッケル(Ni)層の上面に、封止材であるクラッド化された金錫(Au−Sn)層が形成される。クラッド化された金錫(Au−Sn)層の厚みは、10μm〜30μmである。例えば、成分比率が金80%、錫が20%のものが使用されている。       Next, the lid 3 is sealed so that the crystal resonator element 2 is sealed in correspondence with the sealing conductor pattern 4 formed on the upper surface of the substrate region of the master substrate on which the crystal resonator element 2 is mounted. , Place and join. The lid 3 is manufactured by adopting a conventionally known metal processing method and molding a metal such as 42 alloy into a predetermined shape. A nickel (Ni) layer is formed on the upper surface of the lid 3, and a clad gold-tin (Au—Sn) layer as a sealing material is further formed on the upper surface of the nickel (Ni) layer. The thickness of the clad gold-tin (Au—Sn) layer is 10 μm to 30 μm. For example, the component ratio is 80% gold and 20% tin.

(工程C)
ここで封止装置は、図示されてはいないが、マスター基板10を載置・固定する為の台座部11と、キセノンランプ、及びハロゲンランプ等の光ビームを照射する為の照射部によって構成されている。先の光ビームを蓋体3に照射し、封止材8を溶融させることによって、蓋体3をマスター基板10の基板領域に封止を行う。このとき、複数個同時に封止をすることができる。キセノンランプは、陰極と陽極とを内部に配置したバルブであり、発光部の最高輝度の位置を集光ミラーの焦点位置に集光し、この焦点位置に光ファイバの射出端から射出するものである。また、同様にハロゲンランプは、バルブ内にタングステンフィラメントを備え、ハロゲンガスを封入したものである。このタングステンフィラメントが通電加熱されると、ハロゲンガスと反応し、タングステン−ハロゲン化合物が生成される。タングステン−ハロゲン化合物は、バルブ内の対流により、タングステン−ハロゲン化合物がフィラメント付近に運ばれ、高温によりタングステンとハロゲンガスに分解されてタングステンは、フィラメントに沈殿するというハロゲンサイクルを繰り返し、光ビームを発生するものである。即ち、この工程Cは、蓋体3に先述の光ビームが照射され封止材(接合材8)が溶融されて、絶縁基体1の封止用導体パターン4に接合される時に、台座部11に衝撃的に振動を加えて、溶融の始まった封止材(接合材8)を加速的に溶融させて蓋体3を先の絶縁基体1に密着させながら接合するものである。
(Process C)
Here, although not shown, the sealing device is configured by a pedestal portion 11 for placing and fixing the master substrate 10 and an irradiation portion for irradiating a light beam such as a xenon lamp and a halogen lamp. ing. The lid 3 is irradiated on the lid 3 and the sealing material 8 is melted to seal the lid 3 to the substrate region of the master substrate 10. At this time, a plurality can be sealed simultaneously. A xenon lamp is a bulb in which a cathode and an anode are arranged inside. The xenon lamp condenses the position of the highest luminance of the light emitting part at the focal point of the condensing mirror and emits it to the focal point from the exit end of the optical fiber. is there. Similarly, the halogen lamp is provided with a tungsten filament in a bulb and sealed with a halogen gas. When this tungsten filament is energized and heated, it reacts with the halogen gas to produce a tungsten-halogen compound. Tungsten-halogen compounds generate a light beam by repeating a halogen cycle in which tungsten-halogen compounds are transported to the vicinity of the filament by convection in the bulb, decomposed into tungsten and halogen gas at a high temperature, and tungsten precipitates in the filament. To do. That is, in this process C, when the lid 3 is irradiated with the above-described light beam and the sealing material (bonding material 8) is melted and bonded to the sealing conductor pattern 4 of the insulating base 1, the pedestal 11 The sealing material (bonding material 8), which has started melting, is accelerated and shocked, and the melting is started and the lid 3 is bonded to the insulating base 1 in close contact.

図4(a)に示されるように、封止装置の台座部11には、図4(a)の中では示されてはいないが、電磁石が埋め込まれており、制御信号に基づいてON/OFF制御される。封止材8が融点に達した時に、制御信号をONとすることによって、前記蓋体3と前記絶縁基体1の封止用導体パターン4とが電磁石から発生する磁力によって引き付けられて互いに密着させることができる。この時、制御信号のON/OFFを繰り返し行うことにより発生する台座部11の振動により、溶融の始められた封止材8の溶融が加速度的に進行されて、その結果として封止材8の封止用導体パターン4への濡れ広がりを促進することが可能となる。この時、蓋体3は、図中で示す矢印の方向に引き付けられ、密着することになる。       As shown in FIG. 4 (a), although not shown in FIG. 4 (a), an electromagnet is embedded in the pedestal 11 of the sealing device, and ON / OFF is performed based on the control signal. OFF-controlled. When the sealing material 8 reaches the melting point, the control signal is turned ON so that the lid 3 and the sealing conductor pattern 4 of the insulating base 1 are attracted by the magnetic force generated from the electromagnet and are brought into close contact with each other. be able to. At this time, the melting of the sealing material 8 that has started melting is accelerated by the vibration of the pedestal portion 11 that is generated by repeatedly turning on and off the control signal. As a result, the sealing material 8 It becomes possible to promote the wetting and spreading to the conductor pattern 4 for sealing. At this time, the lid 3 is attracted in the direction of the arrow shown in the figure and is brought into close contact therewith.

また、図4(b)に示すように、絶縁基体1の底面を加熱源側に向けて、蓋体側を封止装置の台座部11に接触させ、台座部11に埋め込まれている電磁石を制御信号に基づきON/OFF制御しながら、気密封止することも可能である。この時、絶縁基体1は、図中で示す矢印の方向に引き付けられ、密着することになる。       Further, as shown in FIG. 4B, the bottom surface of the insulating base 1 is directed to the heat source side, the lid side is brought into contact with the pedestal portion 11 of the sealing device, and the electromagnet embedded in the pedestal portion 11 is controlled. It is also possible to perform hermetic sealing while performing ON / OFF control based on the signal. At this time, the insulating substrate 1 is attracted in the direction of the arrow shown in the figure and is brought into close contact therewith.

そして最後に、先の図3(c)に示す如く、前記マスター基板10の各基板領域並びに前記基板領域の外周に沿って切断して分割する。前記マスター基板10の切断はダイサーを用いたダイシング装置等によって行なわれ、かかる切断工程を経てマスター基板10を個々の基板領域毎に分割することにより、各圧電デバイスを得ることができる。       Finally, as shown in FIG. 3C, the substrate is cut and divided along each substrate region of the master substrate 10 and the outer periphery of the substrate region. The master substrate 10 is cut by a dicing apparatus using a dicer or the like, and each piezoelectric device can be obtained by dividing the master substrate 10 into individual substrate regions through the cutting process.

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。上述した実施形態においては、電子部品素子として水晶振動素子を用いることにより水晶振動子を構成するようにしたが、それ以外の電子装置、例えば、電子部品素子としてIC素子や他の圧電素子を用いるようにした電子装置においても本発明は適用可能であり、これらにおいても本発明の技術的範囲に含まれることは言うまでも無い。       In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. In the above-described embodiment, the crystal resonator is configured by using a crystal resonator element as an electronic component element. However, other electronic devices, for example, an IC element or another piezoelectric element is used as the electronic component element. The present invention can also be applied to such an electronic device, and it goes without saying that these are also included in the technical scope of the present invention.

更に、図5はマスター基板10を封止装置の台座部11に接触させる様子を示すものである。       Further, FIG. 5 shows a state in which the master substrate 10 is brought into contact with the pedestal portion 11 of the sealing device.

また、上述した本発明の実施形態においては、封止装置の熱源として、ハロゲンランプ及びキセノンランプを示したが、カーボン治具等の別の加熱源を用いて封止しても構わず、この場合においても本発明の技術的範囲に含まれることは言うまでも無い。       Further, in the above-described embodiment of the present invention, the halogen lamp and the xenon lamp are shown as the heat source of the sealing device. However, it may be sealed using another heating source such as a carbon jig. Needless to say, such a case is included in the technical scope of the present invention.

また、上述した本発明の実施形態において、封止装置の台座部11に加熱装置が設けられており、前記絶縁基体1に予備加熱を行うようにしても構わない。予備加熱をすることにより、前記絶縁基体1に急激な温度変化がなくなるので、熱応力による絶縁基体1のクラックを防止すること出来るといった効果を奏するものである。       In the above-described embodiment of the present invention, a heating device may be provided on the base 11 of the sealing device, and the insulating base 1 may be preheated. By performing the preheating, there is no sudden temperature change in the insulating base 1, so that the effect of preventing cracking of the insulating base 1 due to thermal stress is achieved.

本発明の製造方法によって製作した水晶振動子(圧電デバイス)を斜め上方からみた概略の分解斜視図である。It is the outline exploded perspective view which looked at the crystal oscillator (piezoelectric device) manufactured with the manufacturing method of the present invention from the slanting upper part. 本発明の製造方法によって製作した水晶振動子(圧電デバイス)を側面方向からみた概略の側面断面図である。1 is a schematic side cross-sectional view of a crystal resonator (piezoelectric device) manufactured by a manufacturing method of the present invention as viewed from the side. (a)乃至(c)は本発明の一実施形態にかかる製造方法を説明するための、斜め上方からみた概略の外観斜視図である。BRIEF DESCRIPTION OF THE DRAWINGS (a) thru | or (c) are the outline external perspective views seen from diagonally upward for demonstrating the manufacturing method concerning one Embodiment of this invention. (a)及び(b)は、本発明の一実施形態にかかる圧電デバイスの製造方法を説明するための、それぞれ側面方向からみた概略の側面断面図である。(A) And (b) is the schematic sectional side view seen from the side direction, respectively for demonstrating the manufacturing method of the piezoelectric device concerning one Embodiment of this invention. 本発明の一実施形態にかかるマスター基板を使用した際の製造方法を説明するための、斜め上方からみた概略の斜視図である。It is the schematic perspective view seen from diagonally upward for demonstrating the manufacturing method at the time of using the master board | substrate concerning one Embodiment of this invention.

符号の説明Explanation of symbols

1・・・絶縁基体
2・・・水晶振動素子(圧電振動素子)
3・・・蓋体
4・・・封止用導体パターン
5・・・外部端子
6・・・搭載パッド
7・・・凹部
8・・・封止材
9・・・導電性接着材
10・・マスター基板
11・・台座部
DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 2 ... Crystal oscillation element (piezoelectric oscillation element)
DESCRIPTION OF SYMBOLS 3 ... Cover body 4 ... Conductive pattern for sealing 5 ... External terminal 6 ... Mounting pad 7 ... Recessed part 8 ... Sealing material 9 ... Conductive adhesive material 10 ... Master board 11 ... Pedestal part

Claims (1)

封止用導体パターンが設けられた絶縁基体を台座部と加熱源部から成る封止装置上に載置する工程Aと、
前記絶縁基体に圧電振動素子を搭載し、蓋体を前記絶縁基体の封止用導体パターン上に、前記蓋体に設けられた封止材が前記封止用導体パターンに接するように配置する工程Bと、
前記蓋体に前記加熱源部から熱線が照射され前記封止材が溶融されて、前記絶縁基体の封止用導体パターンに接合される時に、前記封止装置の台座部に備えられた電磁石により、前記蓋体を前記台座部側に引き付けて前記絶縁基体と密着させると共に、前記電磁石のON/OFFを繰り返すことにより前記台座部に振動を加えながら、前記封止材と前記封止用導体パターンとを接合する工程C
から成る圧電デバイスの製造方法。
Placing the insulating substrate provided with the sealing conductor pattern on a sealing device comprising a pedestal part and a heating source part; and
A step of mounting the piezoelectric vibration element on the insulating base and disposing the lid on the sealing conductor pattern of the insulating base so that the sealing material provided on the lid is in contact with the sealing conductor pattern B and
Said been irradiated heat rays from the heating source portion is melted the sealant to the lid member, when joined to the sealing conductor pattern of the insulating substrate, by an electromagnet provided in the base portion of the sealing device The sealing member and the sealing conductor pattern are applied while the lid is attracted to the pedestal portion side to be brought into close contact with the insulating base and vibration is applied to the pedestal portion by repeating ON / OFF of the electromagnet. step C of bonding the bets
A method for manufacturing a piezoelectric device comprising:
JP2005317730A 2005-10-31 2005-10-31 Method for manufacturing piezoelectric device Expired - Fee Related JP4847735B2 (en)

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