JP4836333B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4836333B2
JP4836333B2 JP2001019287A JP2001019287A JP4836333B2 JP 4836333 B2 JP4836333 B2 JP 4836333B2 JP 2001019287 A JP2001019287 A JP 2001019287A JP 2001019287 A JP2001019287 A JP 2001019287A JP 4836333 B2 JP4836333 B2 JP 4836333B2
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JP
Japan
Prior art keywords
film
layer
region
substrate
convex portions
Prior art date
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Expired - Fee Related
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JP2001019287A
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English (en)
Japanese (ja)
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JP2001284601A (ja
JP2001284601A5 (enExample
Inventor
節男 中嶋
律子 河崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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Priority to JP2001019287A priority Critical patent/JP4836333B2/ja
Publication of JP2001284601A publication Critical patent/JP2001284601A/ja
Publication of JP2001284601A5 publication Critical patent/JP2001284601A5/ja
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Publication of JP4836333B2 publication Critical patent/JP4836333B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP2001019287A 2000-01-28 2001-01-26 半導体装置 Expired - Fee Related JP4836333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001019287A JP4836333B2 (ja) 2000-01-28 2001-01-26 半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000020913 2000-01-28
JP2000020913 2000-01-28
JP2000-20913 2000-01-28
JP2001019287A JP4836333B2 (ja) 2000-01-28 2001-01-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2001284601A JP2001284601A (ja) 2001-10-12
JP2001284601A5 JP2001284601A5 (enExample) 2008-06-19
JP4836333B2 true JP4836333B2 (ja) 2011-12-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001019287A Expired - Fee Related JP4836333B2 (ja) 2000-01-28 2001-01-26 半導体装置

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JP (1) JP4836333B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4312466B2 (ja) * 2002-01-28 2009-08-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI272666B (en) 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6906343B2 (en) 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP4421202B2 (ja) * 2002-03-26 2010-02-24 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4503246B2 (ja) * 2002-06-25 2010-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004055771A (ja) * 2002-07-18 2004-02-19 Nec Lcd Technologies Ltd 半導体薄膜の製造方法及びレーザ照射装置
KR101100959B1 (ko) 2010-03-10 2011-12-29 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 표시 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03196567A (ja) * 1989-08-30 1991-08-28 Ricoh Co Ltd 半導体基板とその製造方法
JP3321890B2 (ja) * 1992-06-23 2002-09-09 ソニー株式会社 半導体結晶の形成方法及び半導体素子
JPH1098194A (ja) * 1996-09-19 1998-04-14 Sony Corp 薄膜半導体装置の製造方法
JP3389022B2 (ja) * 1996-09-27 2003-03-24 シャープ株式会社 半導体装置

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Publication number Publication date
JP2001284601A (ja) 2001-10-12

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