JP4834135B2 - リソグラフィ装置および方法 - Google Patents
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- JP4834135B2 JP4834135B2 JP2009204216A JP2009204216A JP4834135B2 JP 4834135 B2 JP4834135 B2 JP 4834135B2 JP 2009204216 A JP2009204216 A JP 2009204216A JP 2009204216 A JP2009204216 A JP 2009204216A JP 4834135 B2 JP4834135 B2 JP 4834135B2
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/28—Processing photosensitive materials; Apparatus therefor for obtaining powder images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G13/00—Electrographic processes using a charge pattern
- G03G13/26—Electrographic processes using a charge pattern for the production of printing plates for non-xerographic printing processes
- G03G13/28—Planographic printing plates
- G03G13/283—Planographic printing plates obtained by a process including the transfer of a tonered image, i.e. indirect process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G13/00—Electrographic processes using a charge pattern
- G03G13/26—Electrographic processes using a charge pattern for the production of printing plates for non-xerographic printing processes
- G03G13/28—Planographic printing plates
- G03G13/286—Planographic printing plates for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (15)
- 乾燥形態の粒子を基板の上または前記基板の上に提供された材料の上に提供するステップと、
前記粒子のうちの1つまたは複数を一定の放射線量で照射するために放射ビームを使用するステップであって、前記一定の放射線量が前記1つまたは複数の粒子のうちの少なくとも1つの粒子が前記基板に、または前記基板の上に提供された前記材料に結合されることを保証するだけの十分な線量であるステップと、
前記基板から、または前記基板の上に提供された材料から、前記基板に、または前記基板の上に提供された前記材料に結合されていない粒子を除去するステップと
を含むリソグラフィ方法。 - 前記粒子が、前記基板の上または前記基板の上に提供された材料の上に提供される前に、電界または磁界を使用して粒子源から抽出される、請求項1に記載の方法。
- 照射中、前記粒子が前記基板の上または前記基板の上に提供された材料の上に保持される、請求項1または請求項2に記載の方法。
- 照射中、前記粒子が電界または磁界を使用して前記基板の上または前記基板の上に提供された材料の上に保持される、請求項1から3のいずれかに記載の方法。
- 前記基板に、または前記基板の上に提供された前記材料に結合されていない粒子が、電界または磁界を使用して除去される、請求項1から4のいずれかに記載の方法。
- 前記粒子が、前記粒子を使用して前記基板の上または前記基板の上に提供された材料の上に生成されるパターンフィーチャの所望のクリティカルディメンションより小さい直径を有する、請求項1から5のいずれかに記載の方法。
- 前記粒子が、前記粒子を使用して前記基板の上または前記基板の上に提供された材料の上に生成されるパターンフィーチャのクリティカルディメンションの所望の標準偏差より小さい直径を有する、請求項1から6のいずれかに記載の方法。
- 電界または磁界によって前記粒子を操作することができる、請求項1から7のいずれかに記載の方法。
- 前記放射ビームがパターン付き放射ビームである、請求項1から8のいずれかに記載の方法。
- 乾燥形態の粒子の粒子源であって、前記粒子源から乾燥形態の粒子が基板の上または前記基板の上に提供された材料の上に提供されるようになされた粒子源と、
前記粒子のうちの1つまたは複数を一定の放射線量で照射するようになされた露光構造であって、前記一定の放射線量が前記1つまたは複数の粒子のうちの少なくとも1つの粒子が前記基板に、または前記基板の上に提供された前記材料に結合されることを保証するだけの十分な線量である露光構造と、
前記基板から、または前記基板の上に提供された材料から、前記基板に、または前記基板の上に提供された前記材料に結合されていない粒子を除去するようになされた粒子除去構造と
を備えたリソグラフィ装置。 - 前記粒子源から粒子を抽出するようになされた粒子抽出構造をさらに備えた、請求項10に記載のリソグラフィ装置。
- 前記粒子抽出構造が、前記粒子源から粒子を抽出するための磁界または電界を生成するように構成された、請求項11に記載のリソグラフィ装置。
- 前記1つまたは複数の粒子を照射している間、前記粒子を前記基板の上または前記基板の上に提供された材料の上に保持するように構成された粒子保持構造をさらに備えた、請求項10から12のいずれかに記載のリソグラフィ装置。
- 前記粒子保持構造が、前記粒子を前記基板の上または前記基板の上に提供された材料の上に保持するための磁界または電界を生成するように構成された、請求項13に記載のリソグラフィ装置。
- 前記粒子除去構造が、前記基板から、または前記基板の上に提供された材料から前記粒子を除去するための磁界または電界を生成するように構成された、請求項10から14のいずれかに記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13653808P | 2008-09-12 | 2008-09-12 | |
US61/136,538 | 2008-09-12 |
Publications (2)
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JP2010067970A JP2010067970A (ja) | 2010-03-25 |
JP4834135B2 true JP4834135B2 (ja) | 2011-12-14 |
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JP2009204216A Active JP4834135B2 (ja) | 2008-09-12 | 2009-09-04 | リソグラフィ装置および方法 |
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---|---|
US (1) | US8383325B2 (ja) |
JP (1) | JP4834135B2 (ja) |
NL (1) | NL2003349A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US9104113B2 (en) * | 2013-01-07 | 2015-08-11 | International Business Machines Corporation | Amplification method for photoresist exposure in semiconductor chip manufacturing |
KR20160075712A (ko) * | 2013-10-25 | 2016-06-29 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 패터닝 디바이스, 및 리소그래피 방법 |
WO2017114659A1 (en) | 2015-12-30 | 2017-07-06 | Asml Netherlands B.V. | Method and apparatus for direct write maskless lithography |
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JPS61152015A (ja) * | 1984-12-26 | 1986-07-10 | Hitachi Micro Comput Eng Ltd | 被膜形成装置 |
JP2912562B2 (ja) * | 1995-02-27 | 1999-06-28 | 科学技術振興事業団 | 微粒子膜のサブミクロンリソグラフィー方法 |
JP2000114140A (ja) * | 1998-10-01 | 2000-04-21 | Nikon Corp | 微粒子除去装置 |
JP3893892B2 (ja) * | 2001-03-28 | 2007-03-14 | セイコーエプソン株式会社 | 振動片の製造方法 |
WO2005065303A2 (en) * | 2003-12-30 | 2005-07-21 | Drexel University | Programmable self-aligning liquid magnetic nanoparticle masks and methods for their use |
JP2005334754A (ja) * | 2004-05-26 | 2005-12-08 | Alps Electric Co Ltd | 塗布膜形成装置 |
JP2006038999A (ja) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | レーザ照射を用いた導電性回路形成方法と導電性回路 |
JP2006055756A (ja) * | 2004-08-20 | 2006-03-02 | Tohoku Univ | レジスト塗布方法 |
JP2006102571A (ja) * | 2004-10-01 | 2006-04-20 | Hitachi Industries Co Ltd | 薄膜形成装置 |
JP4493034B2 (ja) * | 2005-11-21 | 2010-06-30 | 東京エレクトロン株式会社 | 塗布膜の成膜方法及びその装置 |
JP2007158085A (ja) * | 2005-12-06 | 2007-06-21 | Toshiba Corp | 半導体装置の製造方法 |
JP2008042818A (ja) * | 2006-08-10 | 2008-02-21 | Nippon Dempa Kogyo Co Ltd | 感光剤塗布方法、圧電振動片の製造方法および圧電デバイスの製造方法、並びに圧電振動片および圧電デバイス |
JP2008055268A (ja) * | 2006-08-29 | 2008-03-13 | Nippon Dempa Kogyo Co Ltd | 感光剤塗布方法、圧電振動片の製造方法および圧電デバイスの製造方法、並びに圧電振動片および圧電デバイス |
JP2008134614A (ja) * | 2006-10-10 | 2008-06-12 | Canon Inc | パターン形成方法及びこれを用いたデバイスの製造方法 |
US7846642B2 (en) * | 2007-08-17 | 2010-12-07 | The University Of Massachusetts | Direct incident beam lithography for patterning nanoparticles, and the articles formed thereby |
JP2010026182A (ja) * | 2008-07-17 | 2010-02-04 | Canon Inc | 微粒子パターンの形成方法および基板の加工方法 |
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